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 Title: |
US4198644:
Tunnel diode
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Esaki, Leo; Chappaqua, NY
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| Assignee: |
The United States of America as represented by the Secretary of the Army, Washington, DC
other patents from UNITED STATES OF AMERICA, ARMY (597185) (approx. 8,286)
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| Published / Filed: |
1980-04-15
/ 1978-06-09
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| Application Number: |
US1978000914103
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| IPC Code: |
Advanced:
H01L 21/203;
H01L 29/205;
H01L 29/885;
Core:
H01L 21/02;
H01L 29/02;
H01L 29/66;
IPC-7:
H01L 29/161;
H01L 29/88;
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| ECLA Code: |
H01L21/203C; H01L29/205; H01L29/885;
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| U.S. Class: |
Current:
257/104;
257/191;
257/201;
257/E21.097;
257/E29.091;
257/E29.341;
Original:
357/012;
357/016;
357/003;
357/061;
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| Field of Search: |
357/012,16,3,61
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| Government Interest: |
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalties thereon or therefor.
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| Priority Number: |
| 1978-06-09 |
US1978000914103 |
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| Abstract: |
A tunnel diode is disclosed wich includes a heterostructure consisting of a first layer of GaSb1-yAsy and a second layer of In1-xGaxAs. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention.
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| Attorney, Agent or Firm: |
Edelberg, Nathan ;
Kanars, Sheldon ;
Murray, Jeremiah G. ;
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| Primary / Asst. Examiners: |
Edlow, Martin H.;
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| INPADOC Legal Status: |
None
Family Legal Status Report
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| Family: |
Show 2 known family members
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First Claim:
Show all 5 claims |
What is claimed is:
1. A tunnel diode comprising: first and second layers of different semiconductor materials; the top of the valance band for the material of said first layer being at an energy between the energy of the bottom of the conduction band and the top of the valance band for the material of said second layer; the bottom of the conduction band for the material of said first layer being at an energy greater than the energy of the bottom of the conduction band for the material of said second layer; said first layer being degenerately doped with an excess of acceptors to the extent that the Fermi level lies in the valance band; said second layer being degenerately doped with an excess of donors to the extent that the Fermi level lies in the conduction band; and said first and second layers being interfaced to form a semiconductor heterojunction.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
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| Description: |
Show description
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| Forward References: |
Show 20 U.S. patent(s) that reference this one
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