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 Title: |
US5240749:
Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Chow, Lee; Winter Park, FL
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| Assignee: |
University of Central Florida, Orlando, FL
other patents from UNIVERSITY OF CENTRAL FLORIDA (599435) (approx. 135)
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| Published / Filed: |
1993-08-31
/ 1991-08-27
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| Application Number: |
US1991000750309
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| IPC Code: |
Advanced:
C23C 16/02;
C23C 16/27;
C23C 16/511;
Core:
C23C 16/26;
C23C 16/50;
more...
IPC-7:
B05D 3/06;
B05D 5/12;
C23C 16/00;
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| U.S. Class: |
Current:
427/575;
427/122;
427/577;
427/904;
427/906;
Original:
427/575;
427/577;
427/122;
427/249;
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| Field of Search: |
427/45.1,575,577,562,573,535,113,122,249
423/446
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| Priority Number: |
| 1991-08-27 |
US1991000750309 |
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| Abstract: |
A method is provided for growing a diamond thin film on a selected substrate. First the substrate is prepared by scratching the surface thereof with diamond paste. The substrate is then confined in an enclosed space which includes high purity hydrogen and high purity methane gasses under relatively low pressure. The substrate is then irradiated with microwave energy to subject the substrate to a plasma exhibiting a first predetermined power density for a first period of time sufficient to form, on the substrate, diamond-like ball structure particles. The power density of the plasma to which the substrate is exposed is then effectively increased to a second predetermined power density and the substrate in exposed to the plasma for a second period of time sufficiently long such that (100) diamond faces grow on top of the ball structure particles. Finally, the irradiation of the substrate with the diamond-like ball structure particles thereon is continued at the second predetermined power density for a third period of time sufficient to cause the (100) faces on top of the particles to be joined together into a substantially continuous diamond film.
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| Attorney, Agent or Firm: |
Beusse, James H. ;
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| Primary / Asst. Examiners: |
Padgett, Marianne;
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| Maintenance Status: |
E1 Expired Check current status
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| INPADOC Legal Status: |
Show legal status actions
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| Family: |
None
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First Claim:
Show all 19 claims |
What is claimed is:
1. A method for growing a diamond film exhibiting substantially continuous and substantially aligned (100) faces on a selected substrate having a surface, said method comprising the steps of:
- confining said substrate in an enclosed space which includes hydrogen and methane gasses under relatively low pressure of less than about 80 Torr;
- irradiating the surface of said substrate with microwave energy exhibiting a first power density to subject said substrate to a plasma for a first period of time sufficient to form, on the surface of said substrate, diamond-like ball particles;
- substantially increasing the power density of said microwave energy to a second power density to subject the surface of said substrate to a substantially more intense plasma for a second period of time sufficient to form (100) diamond faces on top of said diamond-like ball particles, and
- growing the (100) faces on top of said particles in direction substantially parallel to the surface of said substrate until said (100) faces become substantially joined together to form a substantially continuous film with said (100) faces being substantially aligned with one another by continuing to irradiate the surface of said substrate at said second power density for a third period of time.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 17 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other References: |
Kobashi et al.; "Synthesis of Diamonds by Use of Microwave Plasma Chemical Vapor Deposition: Morphology and Growth of Diamond Films"; The American Physical Society; vol. 38, No. 36; Aug. 15, 1988.
Kobashi et al.; "Morphology and Growth of Diamond Films Synthesized Using Microwave Plasma Chemical Vapor Deposition"; Asada Research Laboratory, Kobe Steel, Ltd., no date.
Messier et al.; "The Quest for Diamond Coatings"; Pennsylvania State University; Journal of Metals; Sep., 1987; pp. 8-11.
(4 pages)
Cited by 5 patents
Graff; "Diamonds Find New Settings"; High Technology; Apr., 1987; pp. 44-47.
Yarbrough et al.; "Current Issues and Problems in the Chemical Vapor Deposition of Diamond"; Science; Feb. 9, 1990; vol. 247; pp. 688-696.
(9 pages)
Cited by 8 patents
Martin et al.; "Epitaxial Growth of Crystalline, Diamond-Like Films on Si (100) by Laser Ablation of Graphite"; American Institute of Physics; Oct. 22, 1990; pp. 1742-1744.
(3 pages)
Wild et al.; "Texture Formation in Polycrystalline Diamond Films"; American Institute of Physics; Aug. 1, 1990; pp. 973-978.
(6 pages)
Phelps et al.; "Raman Examination of a Plasma Arcjet Deposited Diamond Film"; American Institute of Physics; Sep. 10, 1990; pp. 1090-1092.
(3 pages)
Jeng et al.; "Oriented Cubic Nucleations and Local Epitaxy During Diamond Growth on Silicon (100) Substrates"; American Institute of Physics; May 14, 1990.
Grot et al.; "Selective Deposition of Homoepitaxial Diamond Film"; Pennsylvania State University, no date.
Geis; "Growth of Textured Diamond Films on Foreign Substrates from Attached Seed Crystals"; American Institute of Physics; Aug. 7, 1989; pp. 550-552.
(3 pages)
Cited by 12 patents
Sandhu et al.; "Reactive Ion Etching of Diamond"; American Institute of Physics; Jul. 31, 1989; pp. 437-438.
(2 pages)
Cited by 3 patents
Hsu et al.; "Low-Temperature Diamond Growth in a Microwave Discharge"; American Institute of Physics; Dec. 25, 1989; pp. 2739-2741.
(3 pages)
Amaratunga et al.; "Crystalline Diamond Growth in Thin Films Deposited from a CH4 /Ar rf Plasma"; American Institute of Physics; Aug. 14, 1989; pp. 634-635.
(2 pages)
Wong et al.; "Tribological Properties of Diamond Films Grown by Plasma-Enhanced Chemical Vapor Deposition"; American Institute of Physics; May 15, 1989; pp. 2006-2008.
(3 pages)
Narayan et al.; "On Epitaxial Growth of Diamond Films on (100) Silicon Substrates"; American Institute of Physics; Nov. 7, 1988; vol. 53, pp. 1823-1825.
(3 pages)
Cited by 3 patents
Kobashi et al.; "Summary Abstract: Morphology and Growth of Diamond Films"; American Vacuum Society; May/Jun., 1988; pp. 1816-1817.
(2 pages)
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