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Title: US5510098: CVD method of producing and doping fullerenes
[ Derwent Title ]


Country: US United States of America

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7 pages

 
Inventor: Chow, Lee; Orlando, FL

Assignee: University of Central Florida, Orlando, FL
other patents from UNIVERSITY OF CENTRAL FLORIDA (599435) (approx. 135)
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Published / Filed: 1996-04-23 / 1994-01-03

Application Number: US1994000176543

IPC Code: Advanced: C01B 31/02;
Core: C01B 31/00;
IPC-7: C01B 31/00;

ECLA Code: C01B31/02B;

U.S. Class: Current: 423/445.B; 423/262; 423/263; 423/439; 423/446; 977/843;
Original: 423/445.B; 423/446; 423/262; 423/263; 423/439;

Field of Search: 423/446,445 B,262,263,439

Priority Number:
1994-01-03  US1994000176543

Abstract: Methods of producing fullerenes in large-macroscopic quantities inexpensively is disclosed without using solid carbon material such as graphite. In a preferred embodiment, fullerenes are formed by a hot filament CVD procedure. The fullerenes occur in the soot that forms as a by-product on the edges of the substrate holder. Mass spectrum of soot deposits shows lines corresponding to C60. From the typical concentrations of gaseous species in the diamond-growing CVD chamber, hydrocarbon species including CH3 or C2 H2 can be the precursors for the formation of fullerenes in the CVD chamber. A method of using fullerenes to enhance the properties of rubber composites is also described.

Attorney, Agent or Firm: Steinberger, Brian S. ;

Primary / Asst. Examiners: Lewis, Michael; DiMauro, Peter T.

Maintenance Status: E3 Expired  Check current status

INPADOC Legal Status: Show legal status actions

Family: None

First Claim:
Show all 15 claims
I claim:     1. A method of producing fullerenes using an electrically heated metal filament to deposit soot containing fullerenes on a substrate within a Chemical Vapor Deposition chamber, comprising the steps of:
  • (a) feeding and mixing, under fullerene growth conditions to increase the yield of fullerenes-containing soot, approximately 0.5 to 2% CH4 gas with approximately 98 to 99.5% H2 gas into a Chemical Vapor Deposition chamber containing a substrate and a metal filament;
  • (b) raising the temperature of the metal filament in the chamber to approximately 2200 degrees C.;
  • (c) maintaining the temperature of the substrate to be between approximately 900 to 950 degrees C.;
  • (d) collecting soot from the substrate in the chamber; and
  • (e) extracting fullerenes from the collected soot.


Background / Summary: Show background / summary

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Forward References: Show 6 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (6)   |   Backward references (10)   |   Citation Link

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PDF
Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 5pp US4221608  1980-09 Beckman  The Firestone Tire & Rubber Company Rubber-reinforcing blacks
Buy PDF- 3pp US4849199  1989-07 Pinneo  Crystallume Method for suppressing growth of graphite and other non-diamond carbon species during formation of synthetic diamond
Buy PDF- 11pp US5108779  1992-04 Gasworth  General Electric Company Diamond crystal growth process
Buy PDF- 17pp US5132105  1992-07 Remo  Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them
Buy PDF- 10pp US5196396  1993-03 Lieber  The President and Fellows of Harvard College Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
Buy PDF- 14pp US5209812  1993-05 Wu et al.  Ford Motor Company Hot filament method for growing high purity diamond
Buy PDF- 8pp US5223479  1993-06 McCauley, Jr. et al.  The Trustees of the University of Pennsylvania Process for preparing alkali metal-doped fullerenes
Buy PDF- 10pp US5227038  1993-07 Smalley et al.  William Marsh Rice University Electric arc process for making fullerenes
Buy PDF- 6pp US5239820  1993-08 Leifer et al.  California Institute of Technology Electric propulsion using C60 molecules
Buy PDF- 16pp US5273731  1993-12 Anthony et al.  General Electric Company Substantially transparent free standing diamond films
       
Foreign References:
Buy
PDF
Publication Date IPC Code Assignee   Title
Buy PDF CA2091665 1993-10  B01J 19/08 PEGASUS REFRACTORY MATERIALS, INC. PROCESS FOR THE SYNTHESIS OF FULLERENES 
Buy PDF- 21pp WO9220622 1992-11  C01B 31/00 MASSACHUSETTS INST TECHNOLOGY METHOD FOR PRODUCING FULLERENES 


Other Abstract Info: CHEMABS 124(26)356761A CAN124(26)356761A DERABS C96-221200 DERC96-221200

Other References:
  • Dai, G., et al. "A New Technique for Synthesizing Fullerene C60", in `Gaoden Xuexiao Huaxve Xueba`, vol. 13, #7 (1992), pp. 893-894.
  • Chemical Abstracts, vol. 118, #237042d (1993).
  • Patent Abstracts of Japan, vol. 17, #259, (C-1061), May 21, 1993, abstract for Sumino, JP-05-4810 (14 Jan. 1993).
  • Powell, C. F., et al. "Vapor-plating: The Formation of Coatings by Vapor Deposition Techniques", John Wiley: New York, 1955, pp. 1-13 and 71.
  • Howard et al., Fullerenes C60 and C70 in flames, Nature, vol. 352 Jul. 11, 1991.
  • Kratschmer et al., Solid C60: a new form of carbon, Nature, vol. 347, Sep. 27, 1990, pp. 354-358. (5 pages) Cited by 56 patents
  • Kroto et al., C60: Buckminsterfullerene, Nature, vol. 318, Nov. 15, 1985, pp. 162-163. (2 pages) Cited by 33 patents
  • McKinnon et al., Combustion Synthesis of Fullerenes, Combustion And Flame 88: 1992, pp. 102-112. (11 pages) Cited by 8 patents [ISI abstract]


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