 |
|
|
|
|
|
 Title: |
US5677924:
Resonant-cavity optical device
[ Derwent Title ]
|
| Country: |
US United States of America
|
| |
| Inventor: |
Bestwick, Timothy David; Oxford, United Kingdom
|
| Assignee: |
Sharp Kabushiki Kaisha, Osaka, Japan
other patents from SHARP KABUSHIKI KAISHA (SHARP CORPORATION) (508240) (approx. 9,297)
News, Profiles, Stocks and More about this company
|
| Published / Filed: |
1997-10-14
/ 1995-11-13
|
| Application Number: |
US1995000556711
|
| IPC Code: |
Advanced:
H01L 33/00;
H01S 5/00;
H01S 5/042;
H01S 5/183;
H01S 5/20;
H01S 5/42;
Core:
more...
IPC-7:
H01S 3/19;
|
| ECLA Code: |
H01L33/10C; H01L33/46C; H01S5/042E; H01S5/183; T01S5/20; T01S5/42B; T01L33/40C;
|
| U.S. Class: |
Current:
372/096;
257/E33.069;
372/046.01;
Original:
372/096;
372/046;
|
| Field of Search: |
372/092,46,45,96
257/099
|
| Priority Number: |
|
| Abstract: |
A resonant-cavity optical device, eg a vertical cavity surface emitting laser, has a substrate upon which are provided a Bragg reflector multilayer bottom mirror, a semiconductor lower spacer region, an active region, and a dielectric region which surrounds the bottom mirror, the active region and the lower spacer region. An upper spacer region and a top mirror are provided on top of the active region. The top mirror has a window in which a metal terminal is provided. The terminal is in direct contact with the upper spacer region which is formed of a transparent electrically conducting oxide, eg indium tin oxide.
|
| Primary / Asst. Examiners: |
Davie, James W.;
|
| INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report
|
| Designated Country: |
DE FR GB
|
| Family: |
Show 11 known family members
|
First Claim:
Show all 15 claims |
What is claimed is:
1. A resonant-cavity optical device comprising an active region, an electrical terminal, and a spacer region disposed between said active region and said electrical terminal, wherein said electrical terminal is electrically connected with said active region by way of said spacer region and said spacer region is formed of a transparent, electrically conducting oxide.
|
| Background / Summary: |
Show background / summary
|
| Drawing Descriptions: |
Show drawing descriptions
|
| Description: |
Show description
|
| Forward References: |
Show 30 U.S. patent(s) that reference this one
|
|
|
|
|
|
|
| Foreign References: |
|
| Other Abstract Info: |
CHEMABS 125(02)021952B
DERABS G1996-232382
|
| Other References: |
Search Report for UK Appl. 9422950.7, mailed Mar. 6, 1995.
Jewell et al, IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, "Veritcal-Cavity Surface-Emitting Lasers: Deisgn, . . . ".
Matin et al, Electronics Letters, Feb. 1994, vol. 30, No. 4, pp. 318-320, "Optically Transparent Indium-Tin-Oxide (ITO) Ohmic Contacts . . . ".
(3 pages)
Cited by 2 patents
[ISI abstract]
Cava et al, Appl. Phys. Lett. 64 (16) Apr. 1994, pp. 2071-2072, "GaInO3 : A New Transparent Conducting Oxide ".
(2 pages)
[ISI abstract]
Gerard et al, Solid-State Electronics, vol. 37, No. 4-6, pp. 1341-1344, 1994, "Photonic Bandgap of Two-Dimensional Dielectric Crystals".
(4 pages)
Cited by 3 patents
[ISI abstract]
Lee et al, J. Vac. Sci. Technol. A 11(5), Sep./Oct. 1993, pp. 2742-2746, "Electronic and Optical Properties of Room Temperature Sputter".
(5 pages)
Cited by 3 patents
[ISI abstract]
Scherer et al. Electronics Letters, 18 Jun. 1992, vol. 28, No. 13, pp. 1224-1226, "Fabrication of Low Threshold Voltage Microlasers".
(3 pages)
Cited by 6 patents
[ISI abstract]
Hasnain et al, Appl. Phys. Lett. 63(10), Sep. 1993, pp. 1307-1309, "Low, Threshold Buried Heterostructure Vertical Cavity Surface . . . ".
(3 pages)
Cited by 7 patents
[ISI abstract]
Iga et al, IEEE Journal of Quantum Electronics, vol. 24, No. 9, Sep. 1988, "Surface Emitting Semiconductor Lasers".
Search Report for European Appl. 95308104.9, mailed Feb. 28, 1996.
Ishikawa et al, J. Appl. Phys. 66(5), Sep. 1, 1989, "New Double-Heterostructure Indium-Tim Oxide/InGaAsP/AIGaAs Surface Light-Emitting Diodes . . . ".
Dowling et al, J. Appl. Phys. 75(4), 15 Feb. 1994, "The Photonic Band Edge Laser: A New Approach to Gain Enhancement," pp. 1896-1899.
(4 pages)
Cited by 10 patents
[ISI abstract]
Schubert et al, Appl. Phys Lett. 60(8), 24 Feb. 1992, "Resonant Cavity Light-Emitting Diode," pp. 921-923.
(3 pages)
Cited by 29 patents
[ISI abstract]
|
|
 Nominate this for the Gallery...
|
|
