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 Title: |
US6905736:
Fabrication of nano-scale temperature sensors and heaters
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Chow, Lee; Orlando, FL, United States of America
Zhou, Dan; Orlando, FL, United States of America
Stevie, Fred; Raleigh, NC, United States of America
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| Assignee: |
University of Central Florida, Orlando, FL, United States of America
other patents from UNIVERSITY OF CENTRAL FLORIDA (599435) (approx. 135)
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| Published / Filed: |
2005-06-14
/ 2002-02-27
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| Application Number: |
US2002000084688
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| IPC Code: |
Advanced:
B05D 5/12;
C23C 14/14;
C23C 14/16;
C23C 16/04;
C23C 16/16;
C23C 16/48;
G01K 7/02;
Core:
more...
IPC-7:
B05D 5/12;
C23C 14/14;
C23C 14/16;
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| ECLA Code: |
C23C16/16; C23C16/04F; C23C16/48L; G01K7/02M; Y01N8/00;
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| U.S. Class: |
Current:
427/564;
374/E07.008;
427/123;
427/125;
427/531;
427/595;
Original:
427/564;
427/531;
427/595;
427/096;
427/123;
427/125;
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| Field of Search: |
427/526,531,562,564,595,77,96,123,125
438/584,622,650,652,666,674,685,686,688
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| Priority Number: |
| 2002-02-27 |
US2002000084688 |
| 2001-02-28 |
US2001000272155P |
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| Abstract: |
The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga<SUP>+</SUP> ion beam can be used to decompose W(CO)<SUB>6 </SUB>molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH<SUB>3</SUB>)<SUB>3</SUB>Pt in the present case. Because of the Ga<SUP>+</SUP> beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.
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| Attorney, Agent or Firm: |
Steinberger, Brian S. ;
Law Offices of Brian S. Steinberger P.A. ;
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| Primary / Asst. Examiners: |
Padgett, Marianne;
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| INPADOC Legal Status: |
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| Family: |
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First Claim:
Show all 12 claims |
1. A method of making a nano sized sensor comprising the steps of: (a) depositing a first metal nano sized strip on an electrical insulator substrate by a FIB (Focused Ion Beam) deposition process; (b) depositing a second metal nano sized strip on the same said substrate by said FIB process in a partially overlapping portion on said first metal nano sized strip, the second metal nano sized strip being formed of a different metal material from the first metal nano sized strip, the partially overlapping portion being selected from one of a ball-shaped portion, and a point shaped configuration portion, wherein the first metal nano sized strip and the second metal nano sized strip each include a thickness of approximately 50 nm; and (c) forming a bi-metal sensing junction from the partially overlapping portion between the first metal nano sized strip and the second metal nano sized strip, wherein the bi-metal sensing junction includes a cross-sectional area of approximately 50×50 nm2 and the junction is selected from one of a ball-shaped portion, and a point shaped configuration portion.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 1 U.S. patent(s) that reference this one
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