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Title: US7009487: Fabrication of nano-scale temperature sensors and heaters
[ Derwent Title ]

Country: US United States of America

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9 pages

 
Inventor: Chow, Lee; Orlando, FL, United States of America
Zhou, Dan; Orlando, FL, United States of America
Stevie, Fred; Raleigh, NC, United States of America

Assignee: University of Central Florida Research Foundation, Inc., Orlando, FL, United States of America
other patents from UNIVERSITY OF CENTRAL FLORIDA (599435) (approx. 135)
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Published / Filed: 2006-03-07 / 2004-01-23

Application Number: US2004000764242
IPC Code: Advanced: B05D 5/12; C23C 14/14; C23C 14/16; C23C 16/04; C23C 16/16; C23C 16/48; G01K 7/02; H01C 3/04;
Core: H01C 3/00; more...

ECLA Code: C23C16/16; C23C16/04F; C23C16/48L; G01K7/02M; Y01N8/00;

U.S. Class: 338/025; 338/333;

Field of Search: 338/025,47,111,114,224,333 374/179 427/564 264/614,618,619

Priority Number:
2004-01-23  US2004000764242
2002-02-27  US2002000084688
2001-02-28  US2001000272155P

Abstract:     The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga<SUP>+</SUP> ion beam can be used to decompose W(CO)<SUB>6 </SUB>molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH<SUB>3</SUB>)<SUB>3</SUB>Pt in the present case. Because of the Ga<SUP>+</SUP> beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.

Attorney, Agent or Firm: Steinberger, Brian S. ; Law Offices of Brian S. Steinberger, P.A. ;

Primary / Asst. Examiners: Hoang, Tu;

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Related Applications:
Application Number Filed Patent Pub. Date  Title
US2002000084688 2002-02-27    2005-06-14  Fabrication of nano-scale temperature sensors and heaters


       
Family: Show 2 known family members
First Claim:
Show all 11 claims		     1. A nano-scale sensor comprising in combination:

(a) separate nano-strips of W and Pt having a partially overlapping portion with one another, the partially overlapping portion being selected from one of a ball-shaped portion, and a point shaped configuration, wherein the separate nano strips each include a thickness of approximately 50 nm wherein the partially overlapping portion includes: a bi-metal sensing junction having a cross-sectional area of approximately 50×50 nm2;

(b) an electrical insulator onto which said partially overlapping portion of the nano-strips are deposited:

(c) a first output electrode connected to the W nano-strip; and,

(d) a second output electrode which is electrically separate from the first output electrode connected to the Pt nano-strip.

Background / Summary: Show background / summary

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Description: Show description

       
U.S. References: Go to Result Set: All U.S. references   |  No patents reference this one   |   Backward references (12)   |   Citation Link

Buy
PDF		 Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 4pp US3954507  1976-05 Carter   Thermocouples used for measuring temperatures
Buy PDF- 10pp US5411600  1995-05 Rimai et al.  Eastman Kodak Company Ultrathin film thermocouples and method of manufacture
Buy PDF- 7pp US5510098  1996-04 Chow  University of Central Florida CVD method of producing and doping fullerenes
Buy PDF- 12pp US5581083  1996-12 Majumdar et al.  The Regents of the University of California Method for fabricating a sensor on a probe tip used for atomic force microscopy and the like
Buy PDF- 15pp US5838005  1998-11 Majumdar et al.  The Regents of the University of California Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like
Buy PDF- 5pp US6037645  2000-03 Kreider  The United States of America as represented by the United States Department of Commerce Temperature calibration wafer for rapid thermal processing using thin-film thermocouples
Buy PDF- 28pp US6163061  2000-12 Iida  Kabushiki Kaisha Toshiba Infrared solid-state image sensor and manufacturing method thereof
Buy PDF- 18pp US6182509  2001-02 Leung  Simon Fraser University Accelerometer without proof mass
Buy PDF- 31pp US6215137  2001-04 Suzuki et al.  Nikon Corporation Micromechanical sensor for scanning thermal imaging microscope and method of making the same
Buy PDF- 15pp US6367970  2002-04 Danielson  The United States of America as represented by the Secretary of the Navy Rapid response h-q-T sensor
Buy PDF- 21pp US6433310  2002-08 Wickramasinghe et al.  International Business Machines Corporation Assembly suitable for reading/writing/erasing information on a media based on thermal coupling
Buy PDF- 13pp US6757235  2004-06 Wickramasinghe et al.  International Business Machines Corporation Assembly suitable for reading data based on thermal coupling
       
Foreign References:
Buy
PDF		 Publication Date IPC Code Assignee   Title
  JP2000205969 2000-07       


Other References:
  • English machine translation to 2000-205969, Kobayashi patent above, Jul. 2000.


    • Continuity Data:
    Application Number Filed Notes
    >US2004000764242<   is a division of
    US2002000084688  2002-02-27
         US6905736 issued 2005-06-14   Fabrication of nano-scale temperature sensors and heaters
    US2004000764242 2004-01-23  is a non-provisional of provisional
    US2001000272155P  2001-02-28


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