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 Title: |
US3634149:
METHOD OF MANUFACTURING ALUMINIUM NITRIDE CRYSTALS FOR SEMICONDUCTOR DEVICES
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Knippenberg, Wilhelmus Franciscus; Emmasingel, Netherlands
Verspui, Gerrit; Emmasingel, Netherlands
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| Assignee: |
U.S. Philips Corporation, New York, NY
other patents from U.S. PHILIPS CORPORATION (601715) (approx. 17,133)
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| Published / Filed: |
1972-01-11
/ 1967-10-25
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| Application Number: |
US1967000678056
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| IPC Code: |
Advanced:
C01B 21/072;
C30B 25/02;
Core:
C01B 21/00;
more...
IPC-7:
B01J 17/28;
C01B 21/06;
H01L 7/00;
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| U.S. Class: |
Current:
117/087;
023/294.S;
023/301;
117/915;
117/922;
117/951;
117/952;
148/DIG.065;
148/DIG.072;
148/DIG.113;
148/DIG.148;
252/062.3GA;
257/077;
257/200;
427/249.15;
427/249.3;
438/047;
Original:
148/175;
023/192;
023/208;
023/294;
023/301;
117/106;
148/001.5;
148/001.6;
148/174;
252/062.3;
317/237;
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| Field of Search: |
148/1.5,174,175,171,1.6
117/106,107.2,200,201
023/192,204,208,294,301
317/237
252/62.3
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| Priority Number: |
| 1966-10-25 |
NL1966000015059 |
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| Abstract: |
A method of forming aluminum nitride single crystals of large area and silicon carbide-aluminum nitride heterojunctions using a modified Lely method. Aluminum nitride is introduced, as a vapor phase, into a furnace containing a plate-shaped monocrystal of silicon carbide at a temperature between 1800° and 2300° C. At those temperatures, aluminum nitride recrystallizes and condenses to deposit epitaxially on the silicon carbide. If the silicon carbide is of one conductivity type, the aluminum nitride can be suitably doped to be of the opposite conductivity type whereby a heterojunction is formed.
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| Attorney, Agent or Firm: |
Trifari, Frank R. ;
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| Primary / Asst. Examiners: |
Rutledge, Dewayne; Saba, W. G.
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| INPADOC Legal Status: |
None
Family Legal Status Report
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| Family: |
Show 2 known family members
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First Claim:
Show all 6 claims |
1. A method of growing platelike aluminum nitride monocrystals, comprising providing within a chamber a plate-shaped monocrystal of silicon carbide, heating the silicon carbide monocrystal at a temperature between 1,800° and 2,300° C., introducing into the chamber a gas atmosphere comprising aluminum nitride so as to cause solid aluminum nitride by recrystallization and condensation to vapor deposit and epitaxially grow as a platelike single crystal on the heated silicon
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
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| Description: |
Show description
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| Forward References: |
Show 24 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other References: |
Rabenau, A. "Preparation of Aluminum and Gallium Nitride" Compound Semiconductors Vol. 1 Edited by Willardson, R. K., and Goering, H. L., Reinhold Publishing Corp. N.Y., 1962. Chapter 19, pp. 174-180.
Brander, R. W. "Epitaxial Growth of Silicon Carbide" J. Electrochemical Soc. Vol. 111, No. 7, 1964 pp. 881-883.
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