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 Title: |
US4352839:
Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Olson, Daniel R.; Schenectady, NY
Griffing, Bruce F.; Schenectady, NY
Norton, James F.; Alplaus, NY
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| Assignee: |
General Electric Company, Schenectady, NY
other patents from GENERAL ELECTRIC COMPANY (218550) (approx. 30,796)
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| Published / Filed: |
1982-10-05
/ 1981-05-26
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| Application Number: |
US1981000267101
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| IPC Code: |
Advanced:
B05D 1/00;
B05D 3/10;
B05D 3/12;
B05D 5/10;
B05D 7/00;
H01L 21/312;
B05D 3/02;
Core:
H01L 21/02;
more...
IPC-7:
B05D 3/12;
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| ECLA Code: |
B05D1/00C2; H01L21/312; L05D3/02S; L05D3/10G;
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| U.S. Class: |
Current:
427/099.3;
257/E21.259;
427/099.4;
427/240;
427/299;
427/385.5;
427/389.7;
427/393.6;
430/272.1;
Original:
427/240;
427/096;
427/299;
427/385.5;
427/389.7;
427/393.6;
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| Field of Search: |
427/240,389.7,385.5,299,96,393.6
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| Priority Number: |
| 1981-05-26 |
US1981000267101 |
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| Abstract: |
A method of enhancing the adhesion of polymethyl methacrylate to a surface of silicon dioxide utilizing a solution of carboxylic acid is described.
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| Attorney, Agent or Firm: |
Zaskalicky, Julius J. ;
Davis, Jr., James C. ;
Snyder, Marvin ;
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| Primary / Asst. Examiners: |
Lusignan, Michael R.; Bell, Janyce A.
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| INPADOC Legal Status: |
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| Family: |
None
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First Claim:
Show all 9 claims |
What is claimed is:
1. A method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide of a substrate comprising:
- treating said surface of silicon dioxide with a solution of carboxylic acid and thereafter drying said surface,
- depositing a solution of polymethyl methacrylate on the treated surface of silicon dioxide,
- spinning said substrate with said solution of polymethyl methacrylate on said surface of silicon dioxide at a speed and for a time to spread said solution over said surface and to remove the solvent of said solution of polymethyl methacrylate thereby forming said layer of polymethyl methacrylate on said surface of silicon dioxide,
- heating said layer of polymethyl methyacrylate on said surface of silicon dioxide at a temperature and for a time to remove residue of the solvent of said solution of polymethyl methacrylate in said layer of polymethyl methacrylate.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 3 U.S. patent(s) that reference this one
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