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 Title: |
US6380007:
Semiconductor device and manufacturing method of the same
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Koyama, Jun; Kanagawa, Japan
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| Assignee: |
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, Japan
other patents from SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (504585) (approx. 2,164)
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| Published / Filed: |
2002-04-30
/ 1999-12-22
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| Application Number: |
US1999000468918
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| IPC Code: |
Advanced:
H01L 21/20;
H01L 21/322;
H01L 21/336;
H01L 21/77;
H01L 21/84;
H01L 27/12;
H01L 29/786;
Core:
H01L 21/02;
H01L 21/70;
H01L 29/66;
more...
IPC-7:
H01L 21/00;
H01L 21/84;
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| ECLA Code: |
H01L21/77T; H01L21/20D; H01L21/322B; H01L21/336D2B; H01L27/12; H01L29/786D; H01L29/786E4C2;
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| U.S. Class: |
Current:
438/151;
257/E21.133;
257/E21.318;
257/E21.413;
257/E27.111;
257/E29.275;
257/E29.293;
438/156;
438/157;
438/166;
Original:
438/151;
438/156;
438/157;
438/166;
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| Field of Search: |
438/156,157,166,151,160
257/066,47,69,59,350,78
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| Priority Number: |
| 1998-12-28 |
JP1998000374884 |
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| Abstract: |
A Ni film is formed in contact with a semiconductor film from an amorphous silicon film, a microcrystalline silicon film, etc. The semiconductor film is heated at between 450 and 650° C., moving the Ni, and forming a crystalline semiconductor film. Next, a group 15 element is selectively doped into the crystalline semiconductor film including a region that becomes a source region and a drain region, forming a group 15 element doped region. Heat treatment is performed next at between 500 and 850° C., and the crystallization promoting element remaining in a region to be gettered is absorbed by the group 15 element doped region.
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| Attorney, Agent or Firm: |
Robinson, Eric J.Nixon Peabody LLP ;
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| Primary / Asst. Examiners: |
Lebentritt, Michael S.;
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| INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report
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| Family: |
Show 2 known family members
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First Claim:
Show all 44 claims |
What is claimed is:
1. A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor film;
- introducing an element that promotes crystallization into the semiconductor film;
- crystallizing the semiconductor film after introducing the element that promotes crystallization;
- selectively doping a group 15 element into the crystallized semiconductor film;
- selectively doping a group 13 element into at least a part of the crystallized semiconductor film into which the group 15 element is doped;
- heating the semiconductor film after the doping of the group 15 element and after the doping of the group 13 element; and
- patterning the semiconductor film and forming an island-like semiconductor layer,
- wherein the patterning is performed so that the region doped with the group 15 element becomes a source region and a drain region, and the region not doped with the group 15 element becomes either a channel forming region or a channel forming region and a low impurity concentration region.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 31 U.S. patent(s) that reference this one
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| U.S. References: |
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All U.S. references
| Forward references (31)
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Backward references (16)
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Citation Link
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PDF |
Patent |
Pub.Date |
Inventor |
Assignee |
Title |
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US5247190 |
1993-09 |
Friend et al. |
Cambridge Research and Innovation Limited |
Electroluminescent devices
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US5399502 |
1995-03 |
Friend et al. |
Cambridge Display Technology Limited |
Method of manufacturing of electrolumineschent devices
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US5594569 |
1997-01 |
Konuma et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid-crystal electro-optical apparatus and method of manufacturing the same
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US5608232 |
1997-03 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
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US5639698 |
1997-06 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
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US5744822 |
1998-04 |
Ohtani |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device/circuit having at least partially crystallized semiconductor layer
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US5843225 |
1998-12 |
Takayama et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Process for fabricating semiconductor and process for fabricating semiconductor device
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US5879977 |
1999-03 |
Zhang et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Process for fabricating a thin film transistor semiconductor device
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US5897347 |
1999-04 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
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US5956579 |
1999-09 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
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US6013930 |
2000-01 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having laminated source and drain regions and method for producing the same
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US6083574 |
2000-07 |
Asao et al. |
Canon Kabushiki Kaisha |
Aligning method of liquid crystal, process for producing liquid crystal device, and liquid crystal device produced by the process
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US6087245 |
2000-07 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method of gettering crystallization catalyst for forming a silicon film
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US6133075 |
2000-10 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of fabricating the same
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US6147667 |
2000-11 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
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US6153445 |
2000-11 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
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| Foreign References: |
Buy
PDF |
Publication |
Date |
IPC Code |
Assignee |
Title |
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JP06232059
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1994-08 |
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JP06244103
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1994-09 |
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JP06244104
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1994-09 |
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JP07321339
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1995-12 |
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JP08015686
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1996-01 |
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JP10092576
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1998-04 |
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WO9013148
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1990-11 |
H01L 33/00
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BRADLEY, Donal, Donat, Conor
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ELECTROLUMINESCENT DEVICES |
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| Other Abstract Info: |
CHEMABS 133(17)246141B
DERABS C2000-642247
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| Other References: |
Furue et al., Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability, SID 98 Digest, pp. 782-785, 1998, No month.
Yoshida et al., "A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Reponse Time", SID 97 Digest, pp. 841-844, 1997, No month.
Inui et al., "Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays", J. Mater. Chem., 1996, 6(4), pp. 671-673, No month.
(3 pages)
Cited by 149 patents
[ISI abstract]
Terada et al., "Half-V Switching Mode FLCD", Proceedings of the 46th Applied Physics Association Lectures, 28P-V-8, p. 1316, Mar. 1999.
Yoshihara et al., "Time Division Full Color LCD by Ferroelectric Liquid Crystal", EKISHO, vol. 3, No. 3., pp. 190-194, 1999, No month.
Hermann Schenk et al., "Polymers for Light Emitting Diodes", EuroDisplay '99 Proceedings, pp. 33-37, 1999 No month.
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