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Title: |
US6580405:
Information processing device
[ Derwent Title ]
>> View Certificate of Correction for this publication

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Country: |
US United States of America

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Inventor: |
Yamazaki, Shunpei; Tokyo, Japan
Hirakata, Yoshiharu; Kanagawa, Japan
Nishi, Takeshi; Kanagawa, Japan
Kuwabara, Hideaki; Kanagawa, Japan

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Assignee: |
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, Japan
other patents from SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (504585) (approx. 2,164)
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Published / Filed: |
2003-06-17
/ 1999-02-05

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Application Number: |
US1999000244760

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IPC Code: |
Advanced:
G02B 27/01;
G02F 1/13;
G06F 3/00;
G06F 3/01;
G06F 3/048;
Core:
more...
IPC-7:
G09G 3/36;

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ECLA Code: |
G06F3/01B; G02B27/01C;

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U.S. Class: |
Current:
345/007;
345/008;
345/020;
345/043;
345/103;
345/206;
348/053;
349/011;
349/012;
349/013;
349/014;
349/015;
Original:
345/007;
345/008;
345/020;
345/043;
345/103;
345/149;
345/206;
349/011;
349/013;
349/015;
349/012;
349/014;
348/053;

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Field of Search: |
345/007,8,20,103,149,43
349/011,12,13,14,15

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Priority Number: |

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Abstract: |
An information processing device and its system is provided in which a display unit (head mount display) is used and a user carries out an information processing operation while seeing a virtual display screen. Polycrystalline silicon using CGS is used for a semiconductor of a display element of a liquid crystal panel used in the head mount display, so that high speed driving is made possible. The display unit in which frame inversion made in a writing period (60 to 180 Hz) is connected to a control unit and an input operating unit, so that the user can carry out the information processing operation.

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Attorney, Agent or Firm: |
Robinson, Eric J.Robinson Intellectual Property Law Office, P.C. ;

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Primary / Asst. Examiners: |
Hjerpe, Richard; Zamani, Ali

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Maintenance Status: |
CC Certificate of Correction issued View Certificate of Correction

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INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report

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Designated Country: |
DE FR GB NL

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Family: |
Show 14 known family members

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First Claim:
Show all 35 claims |
What is claimed is:
1. An information processing device comprising:
- a display unit comprising flat panel displays for a right eye and a left eye and being mounted on a head of a user;
- a control unit operationally connected to said display unit; and
- an input operating unit connected to said control unit,
- wherein each of said flat panel displays comprises a plurality of first thin film transistors, each having a channel formation region, arranged in a matrix for switching pixels and a driver circuit comprising second thin film transistors for driving said first thin film transistors, said first and second thin film transistors formed over a same substrate,
- wherein said display unit, said control unit and said input operating unit are adapted to be used by the same user, and
- wherein 90% or more of crystal lattices in crystal grain boundaries of the channel formation region have continuity.

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Background / Summary: |
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Drawing Descriptions: |
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Description: |
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Forward References: |
Show 17 U.S. patent(s) that reference this one

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U.S. References: |
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| Forward references (17)
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Backward references (19)
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Citation Link

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Patent |
Pub.Date |
Inventor |
Assignee |
Title |
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US5643826 |
1997-07 |
Ohtani et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
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US5995936 |
1999-11 |
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Report generation system and method for capturing prose, audio, and video by voice command and automatically linking sound and image to formatted text locations
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US6011275 |
2000-01 |
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Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
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US6037635 |
2000-03 |
Yamazaki |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with transistors formed on different layers
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US6046712 |
2000-04 |
Beller et al. |
Telxon Corporation |
Head mounted communication system for providing interactive visual communications with a remote system
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US6066518 |
2000-05 |
Yamazaki |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor devices using a crystallization promoting material
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US6072193 |
2000-06 |
Ohnuma et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Thin-film transistor and semiconductor device using thin-film transistors
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US6087245 |
2000-07 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method of gettering crystallization catalyst for forming a silicon film
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US6091378 |
2000-07 |
Richardson et al. |
Eye Control Technologies, Inc. |
Video processing methods and apparatus for gaze point tracking
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US6091546 |
2000-07 |
Spitzer |
The Microoptical Corporation |
Eyeglass interface system
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US6093934 |
2000-07 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor having grain boundaries with segregated oxygen and halogen elements
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US6093937 |
2000-07 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co. Ltd. |
Semiconductor thin film, semiconductor device and manufacturing method thereof
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US6115007 |
2000-07 |
Yamazaki |
Semiconductor Energy Laboratory Co., Ltd. |
Head mounted display system with varied pixel width
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US6097352 |
2000-08 |
Zavracky et al. |
Kopin Corporation |
Color sequential display panels
|
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US6121660 |
2000-09 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Channel etch type bottom gate semiconductor device
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US6127998 |
2000-10 |
Ichikawa et al. |
Canon Kabushiki Kaisha |
Matrix substrate, liquid-crystal device incorporating the matrix substrate, and display device incorporating the liquid-crystal device
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US6133075 |
2000-10 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of fabricating the same
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US6153445 |
2000-11 |
Yamazaki et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
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US6165824 |
2000-12 |
Takano et al. |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device
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Foreign References: |

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Other Abstract Info: |
DERABS G1999-446309

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Other References: |
Kuriyama H et al. "Comprehensive Study of Lateral Grain Growth In Poly-Si Films By Films By Excimer Laser Annealing and its Application to Thin Film Transistors", Japanese Journal of Applied Physics, vol. 33, No. 10, Part 01, Oct. 1, 1994, pp. 5657-5662.
(6 pages)
Cited by 17 patents
[ISI abstract]
Toshiro Shinohara et al.; "High-Performance Polycrstalline Silicon TFTS Using Self-Aligned Grain Boundary Control Technique" Electronics and Communications in Japan, Part II--Electronics, vol. 76, No. 10, Oct. 1, 1993, pp. 99-106.
Ohtani H et al. "Continuous-Grain Silicon Makes the HDTV Retro-Projector Sizzle" Information Display, Nov. 1998, Palisades Inst. Res. Services, USA, vol. 14, No. 11, pp. 22-24.
European Search Report dated Oct. 27, 1999.
Ohtani et al. (1998) "Late-News Poster: A 60-in. HDTV Rear Projector with Continuous-Grain-Silicon Technology", H. Ohtani et al., SID 98 DIGEST, pp. 467-470, May 17-22, 1998.
U.S. patent application Ser. No. 09/255,605, including specification, drawing, filing receipt and pending claims, "Information Processing Device", Shunpei Yamazaki et al., Feb. 22, 1999.

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