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Title: US6580405: Information processing device
[ Derwent Title ]
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Country: US United States of America

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27 pages

 
Inventor: Yamazaki, Shunpei; Tokyo, Japan
Hirakata, Yoshiharu; Kanagawa, Japan
Nishi, Takeshi; Kanagawa, Japan
Kuwabara, Hideaki; Kanagawa, Japan

Assignee: Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, Japan
other patents from SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (504585) (approx. 2,164)
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Published / Filed: 2003-06-17 / 1999-02-05

Application Number: US1999000244760

IPC Code: Advanced: G02B 27/01; G02F 1/13; G06F 3/00; G06F 3/01; G06F 3/048;
Core: more...
IPC-7: G09G 3/36;

ECLA Code: G06F3/01B; G02B27/01C;

U.S. Class: Current: 345/007; 345/008; 345/020; 345/043; 345/103; 345/206; 348/053; 349/011; 349/012; 349/013; 349/014; 349/015;
Original: 345/007; 345/008; 345/020; 345/043; 345/103; 345/149; 345/206; 349/011; 349/013; 349/015; 349/012; 349/014; 348/053;

Field of Search: 345/007,8,20,103,149,43 349/011,12,13,14,15

Priority Number:
1998-02-09  JP1998000044658

Abstract:     An information processing device and its system is provided in which a display unit (head mount display) is used and a user carries out an information processing operation while seeing a virtual display screen. Polycrystalline silicon using CGS is used for a semiconductor of a display element of a liquid crystal panel used in the head mount display, so that high speed driving is made possible. The display unit in which frame inversion made in a writing period (60 to 180 Hz) is connected to a control unit and an input operating unit, so that the user can carry out the information processing operation.

Attorney, Agent or Firm: Robinson, Eric J.Robinson Intellectual Property Law Office, P.C. ;

Primary / Asst. Examiners: Hjerpe, Richard; Zamani, Ali

Maintenance Status: CC Certificate of Correction issued
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Designated Country: DE FR GB NL 

Family: Show 14 known family members

First Claim:
Show all 35 claims
What is claimed is:     1. An information processing device comprising:
  • a display unit comprising flat panel displays for a right eye and a left eye and being mounted on a head of a user;
  • a control unit operationally connected to said display unit; and
  • an input operating unit connected to said control unit,
  • wherein each of said flat panel displays comprises a plurality of first thin film transistors, each having a channel formation region, arranged in a matrix for switching pixels and a driver circuit comprising second thin film transistors for driving said first thin film transistors, said first and second thin film transistors formed over a same substrate,
  • wherein said display unit, said control unit and said input operating unit are adapted to be used by the same user, and
  • wherein 90% or more of crystal lattices in crystal grain boundaries of the channel formation region have continuity.


Background / Summary: Show background / summary

Drawing Descriptions: Show drawing descriptions

Description: Show description

Forward References: Show 17 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (17)   |   Backward references (19)   |   Citation Link

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Patent  Pub.Date  Inventor Assignee   Title
Get PDF - 26pp US5643826  1997-07 Ohtani et al.  Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
Get PDF - 20pp US5995936  1999-11 Brais   Report generation system and method for capturing prose, audio, and video by voice command and automatically linking sound and image to formatted text locations
Get PDF - 27pp US6011275  2000-01 Ohtani et al.  Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
Get PDF - 12pp US6037635  2000-03 Yamazaki  Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with transistors formed on different layers
Get PDF - 16pp US6046712  2000-04 Beller et al.  Telxon Corporation Head mounted communication system for providing interactive visual communications with a remote system
Get PDF - 19pp US6066518  2000-05 Yamazaki  Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor devices using a crystallization promoting material
Get PDF - 26pp US6072193  2000-06 Ohnuma et al.  Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors
Get PDF - 18pp US6087245  2000-07 Yamazaki et al.  Semiconductor Energy Laboratory Co., Ltd. Method of gettering crystallization catalyst for forming a silicon film
Get PDF - 28pp US6091378  2000-07 Richardson et al.  Eye Control Technologies, Inc. Video processing methods and apparatus for gaze point tracking
Get PDF - 20pp US6091546  2000-07 Spitzer  The Microoptical Corporation Eyeglass interface system
Get PDF - 24pp US6093934  2000-07 Yamazaki et al.  Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having grain boundaries with segregated oxygen and halogen elements
Get PDF - 37pp US6093937  2000-07 Yamazaki et al.  Semiconductor Energy Laboratory Co. Ltd. Semiconductor thin film, semiconductor device and manufacturing method thereof
Get PDF - 10pp US6115007  2000-07 Yamazaki  Semiconductor Energy Laboratory Co., Ltd. Head mounted display system with varied pixel width
Get PDF - 44pp US6097352  2000-08 Zavracky et al.  Kopin Corporation Color sequential display panels
Get PDF - 44pp US6121660  2000-09 Yamazaki et al.  Semiconductor Energy Laboratory Co., Ltd. Channel etch type bottom gate semiconductor device
Get PDF - 54pp US6127998  2000-10 Ichikawa et al.  Canon Kabushiki Kaisha Matrix substrate, liquid-crystal device incorporating the matrix substrate, and display device incorporating the liquid-crystal device
Get PDF - 33pp US6133075  2000-10 Yamazaki et al.  Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
Get PDF - 15pp US6153445  2000-11 Yamazaki et al.  Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
Get PDF - 21pp US6165824  2000-12 Takano et al.  Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
       
Foreign References:
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Publication Date IPC Code Assignee   Title
Get PDF - 70pp EP0499979 1992-08  G02F 1/1362 SEMICONDUCTOR ENERGY LAB Electro-optical device 
Get PDF - 28pp EP0686957 1995-12  G02F 1/133 CASIO COMPUTER CO LTD Liquid crystal display apparatus using liquid crystal having ferroelectric phase and method of driving liquid crystal display device using liquid crystal having ferroelectric phase 


Other Abstract Info: DERABS G1999-446309

Other References:
  • Kuriyama H et al. "Comprehensive Study of Lateral Grain Growth In Poly-Si Films By Films By Excimer Laser Annealing and its Application to Thin Film Transistors", Japanese Journal of Applied Physics, vol. 33, No. 10, Part 01, Oct. 1, 1994, pp. 5657-5662. (6 pages) Cited by 17 patents [ISI abstract]
  • Toshiro Shinohara et al.; "High-Performance Polycrstalline Silicon TFTS Using Self-Aligned Grain Boundary Control Technique" Electronics and Communications in Japan, Part II--Electronics, vol. 76, No. 10, Oct. 1, 1993, pp. 99-106.
  • Ohtani H et al. "Continuous-Grain Silicon Makes the HDTV Retro-Projector Sizzle" Information Display, Nov. 1998, Palisades Inst. Res. Services, USA, vol. 14, No. 11, pp. 22-24.
  • European Search Report dated Oct. 27, 1999.
  • Ohtani et al. (1998) "Late-News Poster: A 60-in. HDTV Rear Projector with Continuous-Grain-Silicon Technology", H. Ohtani et al., SID 98 DIGEST, pp. 467-470, May 17-22, 1998.
  • U.S. patent application Ser. No. 09/255,605, including specification, drawing, filing receipt and pending claims, "Information Processing Device", Shunpei Yamazaki et al., Feb. 22, 1999.


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