 Abstract: |
PURPOSE: To enable the control of the electrical characteristics on the way of manufacture process leaving intact at the wafer condition, by a method wherein penetrating holes of electrode plate holes are made to slip off so as to make electric length to the ground surface changeable.
CONSTITUTION: An amplifier is provided with FETs 1, 2 of two steps composition and parallel transmission lines 9, 10 of tip short circuit, and composes a matching circuit together with a series line. Short circuit parts 5, 6 of the tips of lines and ground parts 7, 8 of FETs 1, 2 are upper electrode padds for ground of via-holes, and parts 13W18 which become upper holes of via-holes are provided on these. Between electrode pads of the surface and back surface of semiconductor wafer are conducted electrically respectively as well as grounded by burying via-holes by conductive bodies.
COPYRIGHT: (C)1986,JPO&Japio
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