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Title: |
US4455626:
Thin film memory with magnetoresistive read-out
[ Derwent Title ]

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Country: |
US United States of America

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Inventor: |
Lutes, Olin S.; Bloomington, MN

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Assignee: |
Honeywell Inc., Minneapolis, MN
other patents from HONEYWELL INC. (256580) (approx. 4,795)
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Published / Filed: |
1984-06-19
/ 1983-03-21

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Application Number: |
US1983000477056

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IPC Code: |
Advanced:
G11C 11/14;
Core:
G11C 11/02;
IPC-7:
G11C 11/15;

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U.S. Class: |
Current:
365/158;
365/057;
Original:
365/158;
365/057;

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Field of Search: |
365/008,158,57
338/32 R
360/113

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Priority Number: |
| 1983-03-21 |
US1983000477056 |

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Abstract: |
A radiation-hard, non-volatile, thin film planar RAM structure fabricated by silicon integrated circuit processing. This memory cell construction provides a magnetoresistive readout. A magnetoresistive film sensor is positioned in the gap of a thicker flux concentrator film. A memory film and the flux concentrator film comprise a magnetic path to the MR film.

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Attorney, Agent or Firm: |
Dahle, Omund R. ;

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Primary / Asst. Examiners: |
Moffitt, James W.;

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INPADOC Legal Status: |
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Family: |
None

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First Claim:
Show all 19 claims |
The embodiments of the invention in which an exclusive property or right is claimed are defined as follows:
1. A planar thin-film magnetic memory structure on a substrate comprising:
- a magnetoresistive film sensor formed in a relatively long and narrow thin-film on the substrate;
- a magnetic circuit including magnetic film means comprising at least a memory film, said magnetic circuit defining an elongated gap at and along the position of said magnetoresistive film sensor;
- said memory film having a relatively square hysteresis loop;
- first and second "write" conductor films formed of highly conductive non-magnetic material, at least one of said "write" conductor films positioned within said magnetic circuit along said elongated gap.

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Background / Summary: |
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Drawing Descriptions: |
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Description: |
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Forward References: |
Show 41 U.S. patent(s) that reference this one

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