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 Title: |
US4459338:
Method of deposition of silicon carbide layers on substrates and product
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Angelini, Peter; Oak Ridge, TN
DeVore, Charles E.; Knoxville, TN
Lackey, Walter J.; Oak Ridge, TN
Blanco, Raymond E.; Oak Ridge, TN
Stinton, David P.; Knoxville, TN
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| Assignee: |
The United States of America as represented by the United States Department of Energy, Washington, DC
other patents from UNITED STATES OF AMERICA, DEPARTMENT OF ENERGY (597195) (approx. 6,712)
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| Published / Filed: |
1984-07-10
/ 1982-03-19
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| Application Number: |
US1982000360116
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| IPC Code: |
Advanced:
C23C 16/32;
G21F 9/34;
Core:
more...
IPC-7:
B32B 5/16;
B32B 9/00;
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| U.S. Class: |
Current:
428/404;
427/215;
427/249.15;
428/218;
976/DIG.394;
Original:
428/404;
427/215;
427/249;
427/255;
428/218;
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| Field of Search: |
427/249,95,255.1,255.7,215,255
428/446,448,404,218
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| Government Interest: |
The invention is a result of a contract with the U.S. Department of Energy.
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| Priority Number: |
| 1982-03-19 |
US1982000360116 |
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| Abstract: |
A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800° C. to 1050° C. when the substrates have been confined within a suitable coating environment.
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| Attorney, Agent or Firm: |
Larcher, Earl L. ;
Hamel, Stephen D. ;
Esposito, Michael F. ;
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| Primary / Asst. Examiners: |
Childs, Sadie L.;
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| Maintenance Status: |
E2 Expired Check current status
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| INPADOC Legal Status: |
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| Family: |
None
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First Claim:
Show all 7 claims |
What is claimed is:
1. A method for providing a nuclear waste particle with a coating consisting of crystalline silicon carbide directly on exposed surfaces thereof, comprising the steps of contacting the particle with a gaseous mixture of methylsilane in an inert gas selected from the group consisting of argon, helium, nitrogen and mixtures thereof while concurrently heating the gaseous mixture and the particle to a temperature in the range of about 800° to 1,050° C. to effect the thermal decomposition of the methylsilane for providing carbon and silicon donors for forming silicon carbide and the chemical vapor deposition of these carbon and silicon donors onto said exposed surfaces as an essentially uniform coating of crystalline silicon carbide on said particle.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 11 U.S. patent(s) that reference this one
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