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Title: |
US4802122:
Fast flush for a first-in first-out memory
[ Derwent Title ]

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Country: |
US United States of America

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Inventor: |
Auvinen, Stuart T.; Capitola, CA
Hoberman, Barry A.; Mountain View, CA

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Assignee: |
Advanced Micro Devices, Inc., Sunnyvale, CA
other patents from ADVANCED MICRO DEVICES, INC. (8075) (approx. 6,737)
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Published / Filed: |
1989-01-31
/ 1987-04-28

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Application Number: |
US1987000043521

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IPC Code: |
Advanced:
G06F 5/10;
G11C 8/16;
G11C 11/41;
Core:
G06F 5/06;
G11C 8/00;
more...
IPC-7:
G11C 11/00;

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ECLA Code: |
G06F5/10; G11C8/16;

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U.S. Class: |
Current:
365/154;
365/190;
365/218;
365/221;
Original:
365/154;
365/190;

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Field of Search: |
365/154,156,189,190,202

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Priority Number: |
| 1987-04-28 |
US1987000043521 |

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Abstract: |
In a memory circuit including a write bit-line for writing data into a memory cell, and a read bit-line for reading data from the cell, a transistor is included, connected with the write bit-line and the read bit-line, so that when a fast flush signal is applied to the gate of that transistor, direct connection is made between the write bit-line and read bit-line, so that data is written into the cell, but can be read simultaneously from the read bit-line, reducing the fall-through delay.

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Attorney, Agent or Firm: |
MacPherson, Alan H. ;
Winters, Paul J. ;
Ogonowsky, Brian D. ;

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Primary / Asst. Examiners: |
Popek, Joseph A.;

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Maintenance Status: |
B1 Re-examined

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INPADOC Legal Status: |
Show legal status actions
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