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 Title: |
US5108983:
Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Lackey, Jr., Walter J.; Marietta, GA
Barefield, E. Kent; Decatur, GA
Carter, William B.; Atlanta, GA
Hanigofsky, John A.; Smyrna, GA
Hill, David N.; Chamblee, GA
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| Assignee: |
Georgia Tech Research Corporation, Atlanta, GA
other patents from GEORGIA TECH RESEARCH CORP. (221085) (approx. 433)
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| Published / Filed: |
1992-04-28
/ 1989-11-21
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| Application Number: |
US1989000439843
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| IPC Code: |
Advanced:
B05D 7/24;
C23C 16/30;
C23C 16/40;
C23C 16/44;
C23C 16/448;
H01L 39/24;
Core:
more...
IPC-7:
B05D 5/12;
C23C 16/00;
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| U.S. Class: |
Current:
505/434;
427/062;
427/248.1;
427/255.32;
505/447;
505/461;
505/473;
505/704;
505/734;
505/737;
Original:
505/001;
505/734;
505/737;
505/704;
427/062;
427/255.3;
427/255.2;
427/255.1;
427/248.1;
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| Field of Search: |
505/001,743,730,737,704
427/062,63,248.1,255.3,255.2,255.1,255,166
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| Priority Number: |
| 1989-11-21 |
US1989000439843 |
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| Abstract: |
A method for applying coatings to substrates using chemical vapor deposition with low vapor pressure reagents is disclosed which comprises the steps of: (a) placing a substrate in a furnace means; (b) directly introducing powder reagents by a powder feeder means into said furnace means; and (c) vaporizing and reacting said reagents within said furnace means resulting in the deposition from the vapor phase of a coating on said substrate, wherein said coating can be an oxide superconductor.
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| Attorney, Agent or Firm: |
Hurt, Richardson, Garner, Todd & Cadenhead ;
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| Primary / Asst. Examiners: |
Beck, Shrive; King, Roy V.
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| INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report
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| Designated Country: |
AU CA EP JP DE DK ES FR GB GR IT LU NL SE
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| Family: |
Show 7 known family members
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First Claim:
Show all 15 claims |
What is claimed is:
1. A method for applying coatings to substrates using chemical vapor deposition in which low vapor pressure reagents are used comprising the steps of:
- (a) providing a substrate;
- (b) selecting a quantity of one or more powder reagents;
- (c) providing a furnace means;
- (d) providing a powder feeder means for introducing said reagent of reagents into said furnace means;
- (e) placing said substrate within said furnace means;
- (f) introducing said powder reagent or reagents into said furnace means; and
- (g) vaporizing and reacting said reagent or reagents within said furnace means resulting in the deposition from the vapor phase of a coating on said substrate.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
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| Description: |
Show description
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| Forward References: |
Show 16 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other Abstract Info: |
CHEMABS 116(04)032748E
DERABS C91-177908
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| Other References: |
Tsuruoka et al., "Characteristics of the Quenched Y-Ba-C u-O Thin Films on SrTiO3 (100), (110) Grown by Organometallic Chemical Vapor Deposition" Appl. Phys. Lett. 54(18) May 1989, pp. 1808-1809.
(2 pages)
Cited by 3 patents
Yamane et al., "High Critical-Current Density of Y-Ba-Cu14 O Superconducting Films Prepared by CVD" Supercond. Sci. Techol. 2 (1989), pp. 115-117.
(3 pages)
Koukitu et al., "Preparation of Y-Ba-Cu14 O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method" Jpn. J. Appl. Phys., vol. 28 (7) Jul. 1989 L1212-1213.
(2 pages)
Cited by 5 patents
Inoue et al., "Preparation of Y-Ba-Cu-O Thin Films by the CVD Method in a Vacuum-Evaporation-Type Reactor" Jpn. J. Appl. Phys., vol. 28(9), Sep. 1989, L1575-1577.
(3 pages)
Hollabough, C. M., et al., "Chemical Vapor Deposition of ZRC Made by Reactions . . . .", 35 (9) Nucl. Tech. 527-535 (1977).
(9 pages)
Cited by 2 patents
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