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Title: US5342648: Method for forming amorphous ferroelectric materials
[ Derwent Title ]

Country: US United States of America

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10 pages

 
Inventor: MacKenzie, John D.; Los Angeles, CA
Xu, Ren; Los Angeles, CA
Xu, Yuhuan; Santa Monica, CA

Assignee: The Regents of the Universty of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 1994-08-30 / 1992-09-23

Application Number: US1992000949744
IPC Code: Advanced: C04B 35/624; H01L 37/02; H01L 41/22;
Core: C04B 35/622; H01L 37/00; more...
IPC-7: B05D 5/12; C04B 35/46;

ECLA Code: C04B35/624; H01L37/02B; H01L41/22;

U.S. Class: Current: 427/126.3; 427/100; 427/346; 427/376.2; 427/385.5; 501/134;
Original: 427/126.3; 427/100; 427/346; 427/376.2; 427/385.5; 501/134;

Field of Search: 427/100,126.3,346,385.5,376.2 501/134

Government Interest:     This invention was made with Government support under Grant No. AFOSR-88-0066 awarded by the U.S. Air Force. The Government has certain rights in this invention.

Priority Number:
1992-09-23  US1992000949744
1991-05-01  US1991000694140

Abstract: Amorphous ferroelectric materials are formed by a sol-gel type process and the ferroelectric properties stabilized by complete hydrolysis and polycondensation, and extraction of residual organic materials, preferably by heating at temperatures below the temperature at which crystallization may occur. Stable solutions of metal alkoxides are prepared by reacting or dissolving a metal alkoxide in alcohol such as absolute ethanol. The solution may be spincast on essentially any substrate, conductor or nonconductor, crystalline or amorphous, transparent or opaque, and even including plastics. Hydrolysis and polycondensation occur in situ to deposit an amorphous ferroelectric film. Residual alcohol is extracted by heating below the temperature at which crystallization occurs. Such films show P-E hysteresis loops and pyroelectric current. Such ferroelectric thin films are useable in electronic, opto-electronic and optical devices.

Attorney, Agent or Firm: Spensley Horn Jubas & Lubitz ;

Primary / Asst. Examiners: Beck, Shrive; Utech, Benjamin L.
INPADOC Legal Status: None          Buy Now: Family Legal Status Report

       
Related Applications:
Application Number Filed Patent Pub. Date  Title
US1991000694140 1991-05-01       


       
Parent Case:     This is a continuation of application Ser. No. 07/694,140 filed on May 1, 1991 now abandoned.

Designated Country: CA EP JP KP 

Family: Show 2 known family members
First Claim:
Show all 14 claims		 What is claimed is:     1. A method for forming an amorphous material having reversible spontaneous electric polarization, the method comprising the steps of:
  • preparing an anhydrous solution containing at least one precursor compound for the material;
  • maintaining the anhydrous solution free of water until the solution is exposed to a substrate;
  • exposing the solution to a substrate in the presence of water vapor and thereby simultaneously depositing a film on the substrate, hydrolyzing the precursor compound, polycondensing the hydrolyzed precursor compound and removing solvent from the anhydrous solution to thereby form condensed amorphous solid material; and
  • heating the condensed amorphous material at a sufficient temperature for stabilizing its amorphous structure and an insufficient temperature for crystallization.
    •


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Forward References: Show 29 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (29)   |   Backward references (0)   |   Citation Link

       
Foreign References: None

Other Abstract Info: CHEMABS 119(10)107461D DERABS C92-398745

Other References:
  • Yi et al. "Preparation of Pb(Zr,Ti)O3 Thin Films by Sol Gel Precrossing: Electrical, Optical and Electro-Optic Properties," J. Appl. Phys. 64(5) 2717-2724 Sep. 88. (8 pages) Cited by 14 patents
  • Lines, "Microscopic Model for a Ferroelectric Glass", Physical Review B, vol. 15, No. 1, Jan. 1, 1977, pp. 388-395. (8 pages)
  • Glass, et al, "Anomalous Dielectric Behavior and Reversible Pyroelectricity in Roller-Quenches LiNbO3 and LiTaO3 Glass", Applied Physics Letters, vol. 31, No. 4, Aug. 15, 1977, pp. 249-251. (3 pages)
  • Mitsuyu, and Wasa, "High Dielectric Constant Films of Amorphous LiNbO3 Prepared by Sputtering Deposition", Japanese Journal of Applied Physics, vol. 20, No. 1, Jan. 1981, pp. L48-L50.
  • Kitabatake, et al., "Structure and Dielectric Properties of Amorphous LiNbO3 Thin Films Prepared by a Sputtering Deposition", J. Appl. Phys. 56 (6), Sep. 15, 1984, 1984 American Institute of Physics, pp. 1780-1784. (5 pages)
  • Fukushima, et al., "Preparation of Ferroelectric PZT Films by Thermal Decomposition of Organometallic Compounds", Journal of Materials Science 19 (1984) pp. 595-598. (4 pages) Cited by 8 patents
  • Budd, et al., "The Effect of Hydrolysis Conditions on the Characteristics of PbTiO3 Gels and Thin Films", Mat. Res. Soc. Symp. Proc. vol. 73, -1986 Materials Research Society, pp. 711-716.
  • Hirano, et al., "Formation of LinbO3 Films by Hydrolysis of Metal Alkoxides", Journal of Non-Crystalline Solids 100 (1988) pp. 538-541, North Holland, Amsterdam. (4 pages)
  • Dey, et al., "Thin-Film Ferroelectrics of PZT by Sol-Gel Processing", IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 35, No. 1, Jan. 1988, pp. 80-81. (2 pages) Cited by 3 patents
  • Budd, et al., "The Effect of Hydrolysis Conditions on the Characteristics of PbTiO3 Gels and Thin Films", Mat. Res. Symp Proc. Vol. 72, 1986 Materials Research Society, pp. 317-322.
  • Wu, "Memory Retention and Switching Behavior of Metal-Ferroelectric-Semiconductor Transistors", Ferroelectrics 1976, vol. 11, pp. 479-484, (Gordon and Breach Science Publishers Ltd. 1976) Gr. Britain.
  • Chapman, et al., "Design and Performance of a Thin Film Ferroelectric-Photoconductor Storage Device", Ferroelectrics 1972, vol. 3, pp. 101-106, IEEE Trans. Sconics and Ultrasonics, 1972, SU 19, pp. 101.


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