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Title: US5352656: Method for the chemical vapor deposition of group IB and group VIIIB metal barrier layers
[ Derwent Title ]


Country: US United States of America

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25 pages

 
Inventor: Lackey, Walter J.; Marietta, GA
Hanigofsky, John A.; Smyrna, GA
Hill, David N.; Chamblee, GA
Shapiro, Michael J.; Fairfax, VA
Barefield, E. Kent; Decatur, GA
Carter, William B.; Atlanta, GA

Assignee: Georgia Tech Research Corporation, Atlanta, GA
other patents from GEORGIA TECH RESEARCH CORP. (221085) (approx. 433)
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Published / Filed: 1994-10-04 / 1992-03-17

Application Number: US1992000852813

IPC Code: Advanced: B05D 7/24; C23C 16/30; C23C 16/40; C23C 16/44; C23C 16/448; H01L 39/24;
Core: more...
IPC-7: B05D 5/12; C23C 16/00;

ECLA Code: B05D7/24C; C23C16/40N; C23C16/448B; C23C16/448D; C23C16/448H; H01L39/24J2P4;

U.S. Class: Current: 505/434; 427/062; 427/123; 427/124; 427/125; 427/250; 505/473; 505/701; 505/702; 505/730;
Original: 505/434; 505/730; 505/701; 505/702; 505/473; 427/062; 427/250; 427/125; 427/124; 427/123;

Field of Search: 427/250,125,124,123,62 505/001,730,701,702 118/715,726

Priority Number:
1992-03-17  US1992000852813
1989-11-21  US1989000439843

Abstract: A method for applying a metal film barrier layer between a substrate and a superconductor coating or over a superconductivity coating using chemical vapor deposition in which low vapor pressure reactants are used, is disclosed, which comprises the steps of providing a substrate and a quantity of metal-bearing reagent and one or more reagents, placing the substrate within the furnace, introducing the metal-bearing reagent by a powder feeder means and then the reagents at different times into and reacting them in the furnace, resulting in the deposition first of a coating of metal onto the substrate and then of a coating consisting essentially of the superconducting reactant components onto the metal film; said reagents generally chosen to yield the group of oxide superconductors.

Attorney, Agent or Firm: Deveau, Colton & Marquis ;

Primary / Asst. Examiners: King, Roy;

Maintenance Status: E2 Expired  Check current status

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Related Applications:
Application Number Filed Patent Pub. Date  Title
US1989000439843 1989-11-21    1992-04-28  Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition


       
Parent Case:

STATEMENT OF RELATED APPLICATIONS
    This application is a continuation-in-part of co-pending application Ser. No. 07/439,843, filed on Nov. 21, 1989, now U.S. Pat. No. 5,108,983.

Designated Country: AU CA EP JP  DE DK ES FR GB GR IT LU NL SE 

Family: Show 7 known family members

First Claim:
Show all 14 claims
What is claimed is:     1. A method for applying a metal film barrier layer to a substrate using chemical vapor deposition comprising the steps of:
  • (a) providing a substrate;
  • (b) providing metal-bearing reagent particles, said metal being selected from the group consisting of Group IB and Group VIII metals;
  • (c) providing a furnace means;
  • (d) providing a powder feeder means for introducing said metal-bearing reagent particles into said furnace means;
  • (e) placing said substrate within said furnace means;
  • (f) introducing said metal-bearing reagent particles into said furnace means; and
  • (g) reacting said metal-bearing reagent particles within said furnace means to deposit from the vapor phase the metal film barrier layer on said substrate.


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Forward References: Show 5 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (5)   |   Backward references (6)   |   Citation Link

Buy
PDF
Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 4pp US4054686  1977-10 Newkirk et al.  The United States of America as represented by the United States Energy Research and Development Administration Method for preparing high transition temperature Nb3 Ge superconductors
Buy PDF- 7pp US4202931  1980-05 Newkirk et al.  The United States of America as represented by the United States Department of Energy Superconducting articles of manufacture and method of producing same
Buy PDF- 9pp US4741928  1988-05 Wilson et al.  General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
Buy PDF- 6pp US4880670  1989-11 Erbil  Georgia Tech Research Corporation Chemical vapor deposition of Group IB metals
Buy PDF- 6pp US4975413  1990-12 Satek et al.  Amoco Corporation Superconductor-coated carbon fiber composites
Buy PDF- 10pp US5154862  1992-10 Reagan et al.  Thermo Electron Corporation Method of forming composite articles from CVD gas streams and solid particles of fibers
       
Foreign References:
Buy
PDF
Publication Date IPC Code Assignee   Title
Buy PDF- 12pp EP0297348 1989-01  C23C 16/18 IBM Method for chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl metal complex 


Other Abstract Info: CHEMABS 116(04)032748E CHEMABS 121(24)290180Q CHEMABS 121(24)290180Q DERABS C1994-316209 DERABS C1991-177908 DERABS C1994-316209

Other References:
  • Voorhoeve, R. J. H. et al., "Selective Deposition of Silver on Silicon by Reaction with Silver Fluoride Vapor", J. Electrochem. Soc., vol. 119, pp. 364-368 (Mar. 1972).
  • Anonymous, "Laser Chemical Vapor Deposition of Silver," Research Disclosure, vol. 363, p. 146 (Mar. 1986).
  • Oehr, C. et al., "Deposition of Silver Films by Plasma-Enhanced Chemical Vapour Deposition", Appl. Phys. A., vol. 59, pp. 691-696 (1989). (6 pages) Cited by 2 patents
  • Mogro-Campero, A. et al., "Thickness and Annealing Dependence of the Superconducting Transition Temperature of YBa2 Cu3 O7-x Thin Films", Appl. Phys. Lett., vol. 53, p. 2566 (1988). (3 pages) Cited by 2 patents
  • Fujino, K., "Effect of Indium-Tin Oxide Buffer Layers on Superconducting Y-Ba-Cu-O Thin Films with Glass Substrates".
  • Jpn. J. Appl. Phys., vol. 28, No. 2, pp. L236-L238 (Feb. 1989).
  • Truman, J. K. et al., "Investigation of SrTiO3 Barrier Layers for RF Sputter-Deposited Y-Ba-Cu-O Films on Si and Sapphire", Published by the Dept. of Materials Science and Engineering, University of Florida (1988).
  • Ma, Q. Y. et al., "Interdiffusion Between Si Substrates and YBaCuO Films," Reprint from materials distributed at International M2 S-HTSC Conference, Stanford, California (Jul. 1989).
  • Chen, J. M. et al., "Study of Interaction Between ZrO2 (YSZ) Substrates and YBa2 Cu3 O7-δ Superconducting Films", Appl. Phys. A., vol. 48, pp. 277-281 (1989). (5 pages)
  • Singh, R. et al., "Preparation of BaF2 Films by Metal Organic Chemical Vapor Deposition", Published by the School of Electrical Engineering and Computer Science, University of Oklahoma, Norman (1989).
  • Hollabough et al., "Chemical Vapor Deposition of ZrC Made by Reactions of ZrCl4 with CH4 and with C3 H6," Nod. Tech., vol. 35, No. 9, p. 527 (1977). (9 pages) Cited by 2 patents
  • Gurvitch, M. et al., "Preparation and Substrate Reactions of Superconducting Y-Ba-Cu-O Films", Appl. Phys. Lett., vol. 51, No. 13, pp. 1027-1029 (Sep. 1987). (3 pages) Cited by 41 patents


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