 |
|
|
|
|
|
 Title: |
US5357119:
Field effect devices having short period superlattice structures using Si and Ge
[ Derwent Title ]
|
| Country: |
US United States of America
|
| |
| Inventor: |
Wang, Kang L.; Santa Monica, CA
Park, Jin S.; Gardena, CA
|
| Assignee: |
Board of Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
News, Profiles, Stocks and More about this company
|
| Published / Filed: |
1994-10-18
/ 1993-02-19
|
| Application Number: |
US1993000019719
|
| IPC Code: |
Advanced:
H01L 27/092;
Core:
H01L 27/085;
IPC-7:
H01L 27/12;
|
| ECLA Code: |
H01L27/092;
|
| U.S. Class: |
Current:
257/018;
257/019;
257/020;
257/024;
257/192;
257/194;
257/E27.062;
Original:
257/018;
257/019;
257/024;
257/192;
257/194;
257/020;
|
| Field of Search: |
257/024,18,19,192,194,195,20
|
| Priority Number: |
| 1993-02-19 |
US1993000019719 |
|
| Abstract: |
Carrier mobility in a heterojunction field effect device is increased by reducing or eliminating alloy scattering. The active channel region of the field effect device uses alternating layers of pure silicon and germanium which form a short period superlattice with the thickness of each layer in the superlattice being no greater than the critical thickness for maintaining a strained heterojunction. The gate contact of the field effect device can comprise quantum Si/Ge wires which provide quantum confinement in the growth plane, thereby allowing the field effect device to further improve the mobility by restricting phonon scattering. The structure can be used to improve device speed performance.
|
| Attorney, Agent or Firm: |
Townsend and Townsend Khourie and Crew ;
|
| Primary / Asst. Examiners: |
Mintel, William;
|
| INPADOC Legal Status: |
Show legal status actions
|
| Family: |
None
|
First Claim:
Show all 20 claims |
What is claimed is:
1. A field effect device comprising
- a monocrystalline silicon semiconductor substrate,
- a first epitaxial layer of silicon grown on said substrate and doped with a first conductivity type dopant,
- a plurality of layers of semiconductor material epitaxially grown on said first epitaxial layer, said plurality of layers comprising alternate single layers of silicon and of germanium semiconductor materials, thereby forming a plurality of heterojunctions in a superlattice structure,
- a source and a drain formed in spaced apart regions in said first epitaxial layer with said superlattice structure therebetween, and
- a gate contact formed over said superlattice structure.
|
| Background / Summary: |
Show background / summary
|
| Drawing Descriptions: |
Show drawing descriptions
|
| Description: |
Show description
|
| Forward References: |
Show 72 U.S. patent(s) that reference this one
|
|
|
|
|
|
|
| Foreign References: |
|
| Other Abstract Info: |
CHEMABS 122(02)021878V
CAN122(02)021878V
DERABS G94-332449
DERG94-332449
|
| Other References: |
Ismail et al. "High-Transconductance N-Type Si/SiGe Modulation-Doped Field-Effect Transistors," IEEE Electron Device Letters, vol. 13, No. 5, May 1992, pp. 229-231.
(3 pages)
Cited by 5 patents
[ISI abstract]
Wegscheider et al., "Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge(001)," Appl. Phys. Lett. 57(15), 8 Oct. 1990, pp. 1496-1498.
(3 pages)
Satpathy et al., "Electronic Properties of the (100)(Si)/(Ge) Strained-Layer Superlattices," Physical Review B, vol. 38, No. 18, 15 Dec. 1988-II, pp. 237-245.
No Author, "Optimal Growth Technique and Structure for Strain Relaxation of Si-Ge Layers on Si Substrates," IBM Technical Disclosure Bulletin, vol. 32, No. 8A, Jan. 1990, pp. 330-331.
Rensch et al., "Performance of the Focused-Ion-Striped Transistor (FIST)-A New MESFET Structure Produced by Focused-Ion-Beam Implantation," IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987, pp. 2232-2237.
(6 pages)
Cited by 3 patents
No Author, "Strained Si/Ge Superlattice for Optical Modulation at 1.3 µm," , IBM Technical Disclosure Bulletin vol. 32, No. 108, Mar. 1990, pp. 259-260.
Iyer, et al., "Heterojunction Bipolar Transistors Using Si-Ge Alloys," IEEE Trans. on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2043-2064.
(22 pages)
Cited by 29 patents
Nayak, et al., "Enhancement-Mode Quantum-Well Gex Si1-x PMOS," IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991, pp. 154-156.
(3 pages)
Cited by 29 patents
[ISI abstract]
Canham, "Silicon Quantum Wire Array Fabrication By Electrochemical and Chemical Dissolution of Wafers," App. Phys. Lett. vol. 57, No. 10, 3 Sep. 1990, pp. 1046-1048.
(3 pages)
Cited by 69 patents
People, "Physics and Applications of Gex Si1-x /Si Strained Layer Heterostructures," IEEE J. of Quantum Electronics, vol. QE-22, No. 9, Sep. 1986, pp. 1696-1710.
(15 pages)
Cited by 7 patents
|
|
 Nominate this for the Gallery...
|
|
