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 Title: |
US5403620:
Catalysis in organometallic CVD of thin metal films
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Kaesz, Herbert D.; Los Angeles, CA
Hicks, Robert F.; Los Angeles, CA
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| Assignee: |
Regents of The University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
1995-04-04
/ 1992-10-13
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| Application Number: |
US1992000959384
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| IPC Code: |
Advanced:
C23C 16/18;
C23C 16/44;
Core:
more...
IPC-7:
C23C 16/00;
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| ECLA Code: |
C23C16/18; C23C16/44;
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| U.S. Class: |
Current:
427/252;
427/123;
427/124;
427/255.7;
427/554;
Original:
427/252;
427/123;
427/124;
427/255.2;
427/255.7;
427/554;
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| Field of Search: |
427/123,124,554,255.2,255.7,252
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| Priority Number: |
| 1992-10-13 |
US1992000959384 |
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| Abstract: |
A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.
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| Attorney, Agent or Firm: |
Bethel, George F. ;
Bethel, Patience K. ;
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| Primary / Asst. Examiners: |
Beck, Shrive; Dang, Vi Duong
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| INPADOC Legal Status: |
Show legal status actions
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| Family: |
None
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First Claim:
Show all 25 claims |
We claim:
1. A process for the chemical vapor deposition of at least one metal onto a substrate comprising:
- a) exposing said substrate to a fluid mixture containing a major amount of at least one vaporizable or soluble precursor film forming metal compound having the formula
Ln MRm
and to a fluid containing a minor amount of at least one vaporizable or soluble precursor catalytic metal compound having the formula
Ln M'Rm
- wherein L is a π-bonding organic ligand consisting of ethylene, allyl, methylallyl, butadienyl, pentadienyl, cyclopentadienyl, methycyclopentadienyl, cyclohexadienyl, hexadienyl, cycloheptatrienyl, or alkyl or alkyl silyl or fluorinated derivatives of said precursor catalytic metal compounds having sufficient volatility of the precursor metal compound to be of utility in gaseous CVD or liquid CVD;
- M is a precursor metal consisting of a transition metal, Ti (titanium), Zr (zirconium), Hf (hafnium), V (vanadium), Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum), W (tungsten), Mn (manganese), Re (Rhenium), Fe (iron), Ru (ruthenium), Os (osmium), or a main group metal consisting of Al (aluminum), Ga (gallium), In (indium), a group 4a element consisting of Si (silicon), Ge (germanium), Sn (tin), or a lanthanide or actinide metal consisting of La (lanthanum), Nd (neodymium), Sm (samarium), U (uranium), Pu (plutonium;
- M' is a metal selected from the group of metals that can catalyze hydrogenation and hydrogenolysis reactions of unsaturated and saturated organic ligands, L and R, to yield volatile byproducts and also can catalyze the hydrogenation of surface carbon to methane in the presence of hydrogen, and consisting of the Group VIII transition metals of Co (cobalt), Rh (rhodium), Ir (iridium), Ni (nickel), Pd (palladium), Pt (platinum), Fe (iron), Ru (ruthenium), and Os (osmium);
- R is a .sigma.-bonding ligand radical consisting of hydrogen, methyl, ethyl, n- or iso- propyl, n-, sec-, or t- butyl, benzyl, phenyl, and silylated and fluorinated derivatives having sufficient volatility or solubility of the precursor metal compound to be of utility in CVD or liquid CVD;
- n is a number from 0 to the valence of said metal,
- m is a number from 0 to the valence of the metal, where m plus n allow a stable configuration of the precursor metal compound to allow the precursor compound to be either volatile or soluble in an organic solvent;
- (b) exposing said substrate to hydrogen gas; and
- (c) maintaining said substrate throughout the reaction at a temperature sufficiently high to decompose said precursor film forming metal compounds and said precursor catalytic metal compounds;
- (d) reacting said precursor film forming metal compound and said precursor catalytic metal compound in the presence of hydrogen gas in a manner to cause decomposition of precursor metal compound Ln MRm, and of the catalyst metal compound Ln M'Rm on the surface of said substrate to form on said surface a metal film M containing catalytic metal M' without causing substantial impurities from the ligands of said precursor compounds to be formed on said surface and incorporated on or within said metal film.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 72 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other Abstract Info: |
CHEMABS 122(26)327217F
CAN122(26)327217F
DERABS C95-146784
DERC95-146784
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| Other References: |
Houle, F. A. et al., "Surface Processes Leading to Carbon Contamination of Photochemically Deposited Copper Films" Nov./Dec. 1986, A4(6)pp. 2452-2458, J. Vac Sci.
(7 pages)
Cited by 10 patents
Gozum, John E. et al, "Tailored Organometallics as Precursors for the Chem. Vapor Deposition of High-Purity Palladium and Platinum Thin Films", 1988, pp. 2688-2689, J. Am. Chem. Soc vol 110, No. 8 (no month).
(2 pages)
Cited by 6 patents
Kaplin, Yu A. et al. "Decomposition of Nickelocene in Presence of Hydrogen" Jan. 1980, pp. 118-121, UDC. 547.1' 174, c. 1980, Plenum Publishing Corp., translated from Zharnal Obshchei Khimir, 50, 118 (1980).
(4 pages)
Cited by 2 patents
Egger, K. W., "Cyclopentadienyl-Metal Complexes II Mass Spectrometric and Gas Phase Kinetic Studies on the Thermal Stability and the Structure of (CH3)3PtC5H5", 24(1970) pp. 501-506, J. Organometallic Chemistry no month.
Cited by 2 patents
Miller, Timothy M. et al, "Heterogeneous, Platinum-Catalyzed Hydrogenation of (Diolofin)dialkylplatinum (II)Complexes: Kinetics", 1988, pp. 3146-3156, J. Amer Chem Soc vol 110 #10 no month.
(11 pages)
Cited by 2 patents
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