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 Title: |
US5466965:
High efficiency, high power multiquantum well IMPATT device with optical injection locking
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Meng, Charles C.; Los Angeles, CA
Fetterman, Harold R.; Pacific Palisades, CA
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
1995-11-14
/ 1992-12-02
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| Application Number: |
US1992000984148
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| IPC Code: |
Advanced:
H01L 29/864;
Core:
H01L 29/66;
IPC-7:
H01L 29/90;
H01L 31/10;
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| ECLA Code: |
H01L29/864;
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| U.S. Class: |
Current:
257/604;
257/015;
257/021;
257/023;
257/186;
257/625;
257/E29.334;
Original:
257/604;
257/021;
257/015;
257/023;
257/186;
257/625;
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| Field of Search: |
257/604,21,15,23,186,625
372/045
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| Government Interest: |
This invention was made with U.S. Government support under Contract No. F49620-89-C-0056 awarded by the Air Force Office of Scientific Research. The U.S. Government has certain rights in this invention.
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| Priority Number: |
| 1992-12-02 |
US1992000984148 |
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| Abstract: |
Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide heterojunctions are used to provide a high power, high frequency, high efficiency device operating at 50 GHz and up. The multiple quantum wells defined by the heterojunctions between pairs of gallium arsenide quantum wells and aluminum gallium arsenide barrier layers improves the nonlinearity of the avalanche process within the gallium arsenide quantum wells and reduces the ionization rate saturation limitations. Optical injection locking of the current through the IMPATT device is achieved by irradiating the active layer of the IMPATT device with modulated laser light.
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| Attorney, Agent or Firm: |
Dawes, Daniel L.Beehler & Pavitt ;
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| Primary / Asst. Examiners: |
Limanek, Robert;
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| INPADOC Legal Status: |
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| Family: |
None
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First Claim:
Show all 16 claims |
We claim:
1. An improvement in a multiple quantum well impact ionization avalanche transit time device (IMPATT) having a P+ substrate, a P+ buffer disposed adjacent to said P+ substrate, at least one N type heterojunction disposed adjacent to said P+ buffer, an N type drift region disposed adjacent to said at least one N type heterojunction, and an N+ type cap layer disposed adjacent to said N type drift layer,
- wherein said at least one heterojunction further comprises the improvement of a plurality of N type heterojunctions having an energy bandgap greater than the energy bandgap of said P+ buffer to form a corresponding plurality of quantum wells disposed adjacent to said P+ buffer, said plurality of quantum wells comprising a plurality of pairs of layers forming each junction, one layer of said pair being a barrier layer and the other layer of said pair being a quantum well layer, the thickness of said layers having a length of approximately comparable to the energy relaxation length of electrons and holes,
- whereby a high power high efficiency multiple quantum well IMPATT device is provided.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 2 U.S. patent(s) that reference this one
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