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Title: US5494558: Production of fullerenes by sputtering
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Country: US United States of America

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Inventor: Bunshah, Rointan F.; Playa del Rey, CA
Jou, Shyankay; Santa Monica, CA
Prakash, Shiva; Santa Barbara, CA
Doerr, Hans J.; Westlake Village, CA

Assignee: The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 1996-02-27 / 1994-11-29

Application Number: US1994000346549

IPC Code: Advanced: C01B 31/02; C23C 14/00; C23C 14/06; C30B 23/02;
Core: C01B 31/00; more...
IPC-7: C23C 14/34;

ECLA Code: C01B31/02B; C23C14/00B; C23C14/06B; C30B23/02+29/02;

U.S. Class: Current: 204/192.15; 204/192.12; 204/298.19; 423/445.B; 977/842;
Original: 204/192.15; 204/192.12; 204/298.19;

Field of Search: 423/445,446,461 204/192.12,192.15,192.1,298.01,298.09,298.19

Priority Number:
1994-11-29  US1994000346549
1992-08-12  US1992000929637

Abstract: A process and system for producing fullerenes by sputtering. A carbon target is sputtered to form a vapor of sputtered carbon atoms. The sputtered carbon atoms are quenched in an atmosphere of inert gas and deposited onto a collection substrate. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C70 and higher fullerenes.

Attorney, Agent or Firm: Poms, Smith, Lande & Rose ;

Primary / Asst. Examiners: Nguyen, Nam;

Maintenance Status: CC Certificate of Correction issued
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INPADOC Legal Status: Show legal status actions

       
Related Applications:
Application Number Filed Patent Pub. Date  Title
US1992000929637 1992-08-12       


       
Parent Case:     This is a continuation of application Ser. No. 08/929,637 filed on Aug. 12, 1992, abandoned.

Family: None

First Claim:
Show all 14 claims
What is claimed is:     1. A process for producing higher fullerenes comprising the steps of:
  • bombarding a carbon target with a sufficient amount of ions to sputter carbon atoms from said target to form a vapor of sputtered carbon atoms;
  • maintaining an atmosphere of inert gas into which said carbon atoms are sputtered to form said vapor of sputtered carbon atoms, said vapor of sputtered atoms being maintained at a pressure of between about 0.5 to 10 Torr;
  • depositing said sputtered carbon atoms onto a substrate to form a carbon soot which contains higher fullerenes and C60 wherein the ratio of said higher fullerenes to C60 is high; and
  • separating said higher fullerenes from said carbon soot.


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Forward References: Show 5 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (5)   |   Backward references (3)   |   Citation Link

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Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 7pp US4565618  1986-01 Banks  The United States of America as represented by the Administrator of the National Aeronautics and Space Administration Apparatus for producing diamondlike carbon flakes
Buy PDF- 8pp US4872905  1989-10 Bourne et al.  The United States of America as represented by the United States Department of Energy Method of producing non-agglomerating submicron size particles
Buy PDF- 8pp US5071708  1991-12 Komaki et al.  Showa Denko K.K. Composite diamond grain
       
Foreign References:
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Publication Date IPC Code Assignee   Title
Buy PDF- 29pp WO9204279 1992-03  B82B 1/00 RESEARCH CORPORATION TECHNOLOGIES, INC. NEW FORM OF CARBON 


Other Abstract Info: CHEMABS 124(20)276245V CAN124(20)276245V DERABS C96-138950 DERC96-138950

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