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Title: US5659195: CMOS integrated microsensor with a precision measurement circuit
[ Derwent Title ]

Country: US United States of America

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13 pages

 
Inventor: Kaiser, William J.; Los Angeles, CA
Pister, Kristofer S. J.; Pacific Palisades, CA
Stafsudd, Oscar M.; Los Angeles, CA
Nelson, Phyllis R.; Mar Vista, CA
Burstein, Amit; N. Hollywood, CA

Assignee: The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 1997-08-19 / 1995-06-08

Application Number: US1995000489023
IPC Code: Advanced: G01P 15/08; G01P 15/093; G01P 15/125; G01P 15/13;
Core: more...
IPC-7: H01L 29/82;

ECLA Code: G01P15/08A; G01P15/093; G01P15/125; G01P15/13B;

U.S. Class: Current: 257/415; 073/514.18; 257/369; 257/414; 257/431; 257/618;
Original: 257/415; 257/414; 257/431; 257/369; 257/618; 073/514.18;

Field of Search: 257/414,415,431,369,618 073/514.18

Priority Number:
1995-06-08  US1995000489023

Abstract:     Improved microsensors are provided by combining surface micromachined substrates, including integrated CMOS circuitry, together with bulk micromachined wafer bonded substrates which include at least part of a microelectromechanical sensing element. In the case of an accelerometer, the proof mass is included within the wafer bonded bulk machined substrate, which is bonded to the CMOS surface machine substrate, which has corresponding etch pits defined therein over which the wafer bonded substrate is disposed, and in the case of accelerometer, the proof mass or thin film membranes in the case of other types of detectors such as acoustical detectors or infrared detectors. A differential sensor electrode is suspended over the etch pits so that the parasitic capacitance of the substrate is removed from the capacitance sensor, or in the case of a infrared sensor, to provide a low thermal conductance cavity under the pyroelectric refractory thin film. Where a membrane suspended electrode is utilized over an etch pit, one or more apertures are defined therethrough to avoid squeeze film damping. Accelerometers built according to the methodology are provided with a nulling feedback voltage to maintain the switch DC voltage across sensing capacitors in a null condition and to maintain high sensitivity without requiring either a precision transformer or regulated power sources in the capacitance bridge of the accelerometer.

Attorney, Agent or Firm: Dawes, Daniel L. ;

Primary / Asst. Examiners: Prenty, Mark V.;

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Designated Country: CA CN EP JP KR SG 

Family: Show 2 known family members
First Claim:
Show all 12 claims		 We claim:     1. A CMOS integrated microsensor comprising:
  • a first semiconductor substrate having surface machined therein an etch pit;
  • a CMOS circuit fabricated within said first substrate; and
  • a semiconductor, wafer-bonded second substrate disposed on said first substrate over said etch pit, said wafer bonded second substrate being bulk micromachined from said first substrate to define bulk-micromachined structures therein, including at least a portion of a sensor element within said second substrate disposed opposite said etch pit in said first semiconductor substrate, said CMOS circuit being fabricated within said first substrate separately from said bulk-micromachined structures in said second substrate, said second substrate being bonded to said first substrate at temperatures below that which would affect said CMOS circuit fabricated in said first substrate,
  • whereby said microsensor is fabricated with said CMOS circuit and combined with microelectromechanical structures as fabricated by bulk machined processes.
    •


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Description: Show description

Forward References: Show 116 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (116)   |   Backward references (54)   |   Citation Link

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Buy PDF- 14pp US5220831  1993-06 Lee  Sundstrand Corporation Closed loop temperature compensation for accelerometer current scale factor
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Buy PDF- 9pp US5311140  1994-05 Permuy  Societe d'Applications Generales d'Electricite et de Mecanique Sagem Circuit for measuring variations in the capacitance of a variable capacitor using a continuously rebalanced detection bridge
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Buy PDF- 5pp US5331236  1994-07 Sexton  The United States of America as represented by the Secretary of the Navy Microdynamic devices fabricated on silicon-on-sapphire substrates
Buy PDF- 12pp US5331852  1994-07 Greiff et al.  The Charles Stark Draper Laboratory, Inc. Electromagnetic rebalanced micromechanical transducer
Buy PDF- 19pp US5331854  1994-07 Hulsing, II  AlliedSignal Inc. Micromachined rate and acceleration sensor having vibrating beams
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Buy PDF- 20pp US5341682  1994-08 Hulsing, II  AlliedSignal Inc. Micromachined rate and acceleration sensor
Buy PDF- 19pp US5343064  1994-08 Spangler et al.   Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
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Foreign References: None

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