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 Title: |
US5674759:
Method for manufacturing semiconductor device for enhancing hydrogenation effect
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Jung, Byung-Hoo; Seoul, Republic of Korea
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| Assignee: |
Samsung Electronics Co., Ltd., Suwon, Republic of Korea
other patents from SAMSUNG ELECTRONICS CO., LTD. (491065) (approx. 12,932)
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| Published / Filed: |
1997-10-07
/ 1996-05-24
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| Application Number: |
US1996000653087
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| IPC Code: |
Advanced:
H01L 21/30;
H01L 21/336;
H01L 23/29;
Core:
H01L 21/02;
H01L 23/28;
IPC-7:
H01L 21/336;
H01L 21/84;
H01L 29/786;
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| ECLA Code: |
H01L21/30H; H01L21/336D2B; H01L23/29C;
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| U.S. Class: |
Current:
438/162;
257/E21.212;
257/E21.413;
257/E23.118;
438/308;
438/795;
Original:
437/021;
437/040.TFT;
437/041.TFT;
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| Field of Search: |
437/021,40 TFT,41 TFT,160,161,980,24,937
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| Priority Number: |
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| Abstract: |
A method of manufacturing a semiconductor device having enhanced hydrogenation effect using a refractory metal capping layer formed over a plasma nitride layer, whereby hydrogen from the plasma nitride layer is diffused into a semiconductor transistor structure under heat treatment.
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| Primary / Asst. Examiners: |
Wilczewski, Mary;
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| INPADOC Legal Status: |
None
Family Legal Status Report
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