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 Title: |
US5726480:
Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Pister, Kristofer S. J.; Pacific Palisades, CA
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
1998-03-10
/ 1995-01-27
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| Application Number: |
US1995000379751
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| IPC Code: |
Advanced:
G01P 15/08;
G01P 15/12;
Core:
more...
IPC-7:
H01L 29/72;
H01L 29/76;
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| ECLA Code: |
G01P15/08A; G01P15/12D;
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| U.S. Class: |
Current:
257/415;
257/417;
257/421;
257/522;
257/618;
257/735;
257/773;
Original:
257/415;
257/417;
257/421;
257/522;
257/618;
257/735;
257/773;
437/228;
437/901;
437/921;
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| Field of Search: |
257/415,421,522,618,735,773
437/228,901,921
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| Priority Number: |
| 1995-01-27 |
US1995000379751 |
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| Abstract: |
What is described in the present specification are accelerometers using tiny proof masses and piezoresistive force detection. Conventional wisdom would indicate that this approach would not yield useful sensors. However, in fact, according to the invention, such devices are suitable in a wide range of applications. The devices may include deformable hinges to allow the fabrication of three dimensional structures. A new system has been developed which etches silicon highly selectively at moderate temperatures and without hydrodynamic forces potentially damaging to small structures and features. The system is based on the use of the gas phase etchant xenon diflouride, which is an unremarkable white solid at standard temperature and pressure.
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| Attorney, Agent or Firm: |
Dawes, Daniel L. ;
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| Primary / Asst. Examiners: |
Wojciechowicz, Edward;
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| Maintenance Status: |
CC Certificate of Correction issued
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| INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report
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| Designated Country: |
CA EP JP KR SG
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| Family: |
Show 2 known family members
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First Claim:
Show all 49 claims |
I claim:
1. In a method for fabricating a microelectromechanical (MEM) device, said MEM device being formed in or on at least one semiconductor substrate, including an integrated circuit formed therein by standard IC processing and including a microelectromechanical assembly, an improvement comprising:
- providing a substantially completed MEM device through said standard IC processing, said MEM device being completely fabricated except for at least one etching step, said etching step defining a structural element within said microelectromechanical assembly from said at least one substrate to complete said device and to render said MEM device operable; and
- etching said MEM device with a noble gas fluoride to define said structural element with respect to said substrate.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
Show drawing descriptions
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| Description: |
Show description
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| Forward References: |
Show 203 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other Abstract Info: |
CHEMABS 125(14)183329F
DERABS C96-362817
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| Other References: |
"Microelectromechanical Systems," by Mehran Mehregany, Circuits and Devices, Jul. 1993, pp. 14-22; 8755-3996/93/ 1993 IEEE.
(9 pages)
Cited by 39 patents
[ISI abstract]
"A CMOS Compatible Thermally Excited Silicon Oxide Beam Resonator with Aluminum Mirror," by D. Moser et al., Swiss Federal Institute of Technology, Zurich, Switzerland, 91CH2817-5/91/ 1991 IEEE, pp. 547-550.
"2 Thermoelectric Microsensors and Microsystems," by Henry Baltes et al., Swiss Federal Institute of Technology (ETH), Zurich, Switzerland.
"A Smart Accelerometer with on-chip electronics fabricated by a commercial CMOS process," Riethmuller et al., Sensors & Actuators A, 31 (1992) 121-124.
(4 pages)
Cited by 31 patents
[ISI abstract]
J. Marshall et al, "Realizing Suspended Structures on Chips Fabricated by CMOS Foundry Processes Through MOSIS Service," NISTIR 5402, U.S. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (1994).
M. Parameswaran et al., "Commercial CMOS Fabricated Integrated Dynamic Thermal Scene Simulator," IEEE Int. Elec. Dev. Mtg., San Francisco, CA Dec. 13-16, 1991, at 753-56.
M. Gaitan et al.. "Performance of Commercial CMOS Foundry Compatible Multijunction Thermal Converters," in Proc. 7th Int. Conf. on Solid State Sensor and Actuators (Transducers '93) Yokohama, Jun. 7-10, 1993 at 1012-14.
Parameswaran et al., "CMOS Electrothermal Microactuator," in Proc. IEEE Microelectro Mechanical Systems Workshop, Napa, California, Feb. 11-14, 1990 at 128-31.
D. Moser, "CMOS Flow Sensors," Ph.D. Thesis ETH Zurich, Physical Electronics Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland.
Boltshauser et al., "Piezoresistive Membrane Hygrometers Based on IC Technology," Sensors & Materials, 5(3): 125-34 (1993).
H. Baltes, "CMOS as a Sensor Technology," Sensors and Actuators A37-38:51-6 (1993).
(6 pages)
Cited by 30 patents
[ISI abstract]
Parpia et al., "Modeling with CMOS Compatible High Voltage Device Structures," Proc. Symp. High Voltage and Smart Power Devices at 41-50 (1987).
Krummenacher et al., "Smart Temperature Sensor in CMOS Technology," Sensors and Actuators, A21-23:636:38 1990.
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