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 Title: |
US5747118:
Plasma enhanced chemical transport process for forming diamond films
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Bunshah, Rointan F.; Playa Del Rey, CA
Doerr, Hans J.; Westlake Village, CA
Jou, Shyankay; Santa Monica, CA
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
1998-05-05
/ 1995-08-02
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| Application Number: |
US1995000510483
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| IPC Code: |
Advanced:
C23C 14/06;
C23C 14/32;
C23C 14/34;
C23C 16/27;
H01J 1/304;
Core:
C23C 16/26;
more...
IPC-7:
B05D 3/06;
C23C 16/00;
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| ECLA Code: |
C23C14/06B2; C23C14/32; C23C14/34; C23C16/27K2B; H01J1/304B; T01J201/304D4B;
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| U.S. Class: |
Current:
427/577;
427/122;
427/249.8;
Original:
427/577;
427/249;
427/122;
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| Field of Search: |
427/577,249,122
423/446
428/408
117/929
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| Priority Number: |
| 1995-08-02 |
US1995000510483 |
| 1994-04-06 |
US1994000223693 |
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| Abstract: |
A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 mu m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.
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| Attorney, Agent or Firm: |
Ram, Michael J. ;
Kleinberg, Marvin H. ;
Lerner, Marshall A. ;
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| Primary / Asst. Examiners: |
King, Roy V.;
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| Maintenance Status: |
E1 Expired Check current status
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| INPADOC Legal Status: |
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Family Legal Status Report
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| Parent Case: |
This is a continuation of application Ser. No. 08/223,693, filed Apr. 6, 1994, now abandoned.
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| Designated Country: |
AU CA EP JP DE FR GB
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| Family: |
Show 10 known family members
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First Claim:
Show all 20 claims |
What is claimed is:
1. A plasma enhanced chemical transport process for the formation of a diamond film on a substrate, the substrate being located on or near an anode in a dc circuit, the substrate being spaced from a carbon cathode and the anode, the substrate and the cathode being located within a vacuum chamber consisting essentially of the steps of:
- a.) positioning the substrate at a distance from a lower surface of the cathode to form a gap of from about 0.4 to about 1.0 cm,
- b.) evacuating substantially all of the gases from the vacuum chamber and then introducing sufficient substantially pure hydrogen gas into the chamber to bring the pressure in the chamber to the range from about 80 Torr to about 180 Torr, and
- c.) applying a dc current to the circuit and across the gap between the anode and the cathode without the addition of an electron assisted discharge to form a hydrogen plasma in the gap, the current density at an upper surface of the anode being from about 0.5 to about 4.0 amp/cm2.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 34 U.S. patent(s) that reference this one
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| Forward references (34)
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Backward references (8)
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Citation Link
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PDF |
Patent |
Pub.Date |
Inventor |
Assignee |
Title |
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US3175885 |
1965-03 |
Brinkman et al. |
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Method for artificial synthesis of diamonds
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US4816291 |
1989-03 |
Desphandey et al. |
The Regents of the University of California |
Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
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US4961958 |
1990-10 |
Desphandey et al. |
The Regents of the Univ. of Calif. |
Process for making diamond, and doped diamond films at low temperature
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US5051785 |
1991-09 |
Beetz, Jr. et al. |
Advanced Technology Materials, Inc. |
N-type semiconducting diamond, and method of making the same
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US5104634 |
1992-04 |
Calcote |
Hercules Incorporated |
Process for forming diamond coating using a silent discharge plasma jet process
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US5126206 |
1992-06 |
Gang et al. |
Diamonex, Incorporated |
Diamond-on-a-substrate for electronic applications
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US5186973 |
1993-02 |
Gang et al. |
Diamonex, Incorporated |
HFCVD method for producing thick, adherent and coherent polycrystalline diamonds films
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US5382809 |
1995-01 |
Nishibayashi et al. |
Sumitomo Electric Industries, Ltd. |
Semiconductor device including semiconductor diamond
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| Foreign References: |
Buy
PDF |
Publication |
Date |
IPC Code |
Assignee |
Title |
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JP01192794
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1989-08 |
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| Other Abstract Info: |
CHEMABS 124(02)019717Q
CHEMABS 128(07)083321R
DERABS C95-366406
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| Other References: |
John C. Angus et al., Growth of Diamond Seed Crystals by Vapor Deposition, Journal of Applied Physics, vol. 19, No. 6, pp. 2915-2922.
B.V. Derjaguin, et al., Filamentary Diamond Crystals, Journal of Crystal Growth 2 (1968), pp. 380-384.
C.V. Desphandey, et al., Diamond and diamondlike films: Deposition processes and properties, J.Vac. Sci. Technol. A, vol. 7, No. 3, May/Jun. 1989, pp. 2294-2302.
Naoji Fujimori, et al., Properties of Boron-Doped Epitaxial Diamond Films, Japanese Journal of Applied Physics, vol.29, No. 5, May 1990, pp. 824-827.
(4 pages)
M.W. Geis, et al., Diamond Cold Cathode, IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 456-459.
(4 pages)
Cited by 29 patents
[ISI abstract]
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(8 pages)
Cited by 9 patents
[ISI abstract]
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Cited by 10 patents
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[ISI abstract]
Gennady Sh. Gildenblat, et al., The Electrical Properties and Device Applications of Homoepitaxial and Polycrystalline Diamond Films, Proceedings of the IEEE, vol. 79, No. 5, May 1991, pp. 647-668.
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[ISI abstract]
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[ISI abstract]
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[ISI abstract]
Kazuaki Kurihara, et al., High rates synthesis of diamond by dc plasma jet chemical vapor deposition, Appl. Phys. Lett., vol. 52, No. 6, Feb. 1988, pp. 437-438.
(2 pages)
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(3 pages)
Cited by 16 patents
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(7 pages)
Cited by 22 patents
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[ISI abstract]
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[ISI abstract]
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[ISI abstract]
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[ISI abstract]
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[ISI abstract]
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