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 Title: |
US5858820:
Thin film transistor-liquid crystal display and a manufacturing method thereof
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Jung, Byung-Hoo; Seoul, Republic of Korea
Jin, Yong-Suk; Kyungki-do, Republic of Korea
Lee, Joo-Hyung; Seoul, Republic of Korea
Hwang, Chang-Won; Seoul, Republic of Korea
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| Assignee: |
Samsung Electronics Co., Ltd., Kyungki-do, Republic of Korea
other patents from SAMSUNG ELECTRONICS CO., LTD. (491065) (approx. 12,932)
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| Published / Filed: |
1999-01-12
/ 1996-05-17
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| Application Number: |
US1996000649517
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| IPC Code: |
Advanced:
G02F 1/1362;
H01L 21/20;
H01L 21/336;
H01L 21/77;
H01L 21/84;
H01L 27/12;
Core:
H01L 21/02;
H01L 21/70;
more...
IPC-7:
H01L 21/00;
H01L 21/20;
H01L 21/36;
H01L 21/84;
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| ECLA Code: |
H01L21/77T; G02F1/1362D; H01L21/20D; H01L21/336D2C; H01L27/12;
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| U.S. Class: |
Current:
438/150;
257/E21.133;
257/E21.414;
257/E27.111;
438/166;
438/486;
Original:
438/150;
438/166;
438/486;
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| Field of Search: |
438/149,150,151,164,166,482,158,486
257/347,352,353,354
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| Priority Number: |
| 1995-05-17 |
KR1995000012232 |
| 1995-05-17 |
KR1995000012241 |
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| Abstract: |
The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.
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| Attorney, Agent or Firm: |
Pillsbury Madison & Sutro LLP ;
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| Primary / Asst. Examiners: |
Dutton, Brian;
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| INPADOC Legal Status: |
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Family Legal Status Report
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| Family: |
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First Claim:
Show all 14 claims |
What is claimed is:
1. A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:
- depositing a seed layer on a substrate;
- forming a seed layer pattern by etching said seed layer;
- epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate;
- implanting ions in said silicon layer to obtain an ion implanted silicon layer; and
- annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display,
wherein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location between source and drain electrodes in said active region of said thin film transistor liquid crystal display.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 16 U.S. patent(s) that reference this one
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