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 Title: |
US5882953:
Dopant activation of heavily-doped semiconductor by high current densities
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Tu, King-Ning; Los Angeles, CA
Huang, Jia-Sheng; Los Angeles, CA
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
1999-03-16
/ 1996-07-12
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| Application Number: |
US1996000679136
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| IPC Code: |
Advanced:
H01L 21/265;
H01L 21/326;
H01L 21/479;
Core:
H01L 21/02;
IPC-7:
H01L 21/425;
H01L 21/44;
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| ECLA Code: |
H01L21/265A2B; H01L21/326; H01L21/479;
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| U.S. Class: |
Current:
438/101;
257/E21.327;
257/E21.337;
257/E21.498;
438/466;
438/510;
438/530;
Original:
438/101;
438/466;
438/510;
438/530;
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| Field of Search: |
438/100,101,466,467,469,510,530,533,330,332
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| Priority Number: |
| 1996-07-12 |
US1996000679136 |
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| Abstract: |
Dopant activation in heavily boron doped p+ --Si is achieved by applying electric current of high density. The p+ --Si was implanted by a 40 KeV BF2+ at an ion intensity 5.multidot.1015 ions per cm2 and annealed at 900° C. for 30 minutes to obtain a partial boron activation according to conventional processing steps. To obtain additional activation and higher conductivity, current was gradually applied according to the invention to a current density of approximately 5×106 A/cm2 was realized. The resistance of the p+ --Si gradually increases and then decreases with a precipitous drop at a threshold current. The resistance was reduced by factor of 5 to 18 times and was irreversible if an activation current threshold was reached or exceeded. The high-current-density-dopant activation occurs at room temperature.
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| Attorney, Agent or Firm: |
Dawes, Daniel L. ;
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| Primary / Asst. Examiners: |
Trinh, Michael;
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| INPADOC Legal Status: |
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| Designated Country: |
EP JP KR SG
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| Family: |
Show 2 known family members
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First Claim:
Show all 19 claims |
We claim:
1. A nonthermal method of activating a dopant in semiconductor material comprising:
- supersaturating said semiconductor material with a dopant; and
- applying a current with a minimum current density to said supersaturated semiconductor material above an activation threshold at an arbitrary temperature, said current being termed a high density current when above said activation threshold;
- whereby said supersaturated dopants in said semiconductor material is activated.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 1 U.S. patent(s) that reference this one
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