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Title: US5883310: Micromachined hot-wire shear stress sensor
[ Derwent Title ]


Country: US United States of America

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15 pages

 
Inventor: Ho, Chih-Ming; Rancho Palos Verdes, CA
Tai, Yu-Chong; Pasadena, CA
Jiang, Fukang; Alhambra, CA
Liu, Chang; Pasadena, CA
Huang, Jin-Biao; Los Angeles, CA

Assignee: The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 1999-03-16 / 1995-04-25

Application Number: US1995000428334

IPC Code: Advanced: G01F 1/684; G01P 5/12;
Core: G01P 5/10; more...
IPC-7: G01B 7/16;

ECLA Code: G01F1/684M; G01P5/12;

U.S. Class: Current: 073/766; 073/720; 073/777;
Original: 073/766; 073/777; 073/720;

Government Interest:     The United States Government has certain rights in this invention pursuant to Grant No. F 49620-92-J-0424 and F 4962-1-93-0332 awarded by the United States Air Force.

Priority Number:
1995-04-25  US1995000428334
1994-11-04  US1994000334422

Abstract: A micromachined hot-wire anemometer having fast response times and higher sensitivities than conventional hot-wire anemometers is provided by micromachining doped polysilicon wires carried on silicon supports cantilevered from a substrate including one or more insulating layers disposed between said substrate and supports. The micromachined polysilicon hot-wire anemometer is fabricated using surface micromachining techniques. A shear stress sensor is micromachined to define a thin diaphragm over a cavity defined in a substrate underlying the diaphragm. The cavity is evacuated, sealed, and a thermistor disposed over the diaphragm. The thermistor is thus thermally insulated from the substrate and provides a low profile shear stress sensor for measuring flow rates in boundary layers above a flow surface.

Attorney, Agent or Firm: Dawes, Daniel L. ;

Primary / Asst. Examiners: Noori, Max H.;

INPADOC Legal Status: Show legal status actions

       
Related Applications:
Application Number Filed Patent Pub. Date  Title
US1994000334422 1994-11-04       


       
Parent Case:

RELATED APPLICATIONS
    This application is a continuation-in-part of U.S. patent application Ser. No. 08/334,422, filed Nov. 4, 1994.

Family: None

First Claim:
Show all 3 claims
We claim:     1. A micromachined hot-wire thermal shear stress sensor comprising:
  • a silicon substrate;
  • a thermal insulation barrier comprising a cavity formed in the substrate and sealed by a silicon nitride diaphragm under vacuum conditions wherein vacuum in the cavity thermally isolates the diaphragm from the substrate;
  • a polycrystalline silicon thermistor thermally isolated from the substrate by the diaphragm and the cavity; and
  • means for conducting an electrical heating current to the thermistor.


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Forward References: Show 29 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (29)   |   Backward references (7)   |   Citation Link

Buy
PDF
Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 8pp US4322980  1982-04 Suzuki et al.  Hitachi, Ltd. Semiconductor pressure sensor having plural pressure sensitive diaphragms and method
Buy PDF- 10pp US4342231  1982-08 Yamamoto et al.  Hitachi, Ltd. Differential pressure transmitter
Buy PDF- 18pp US4519401  1985-05 Ko et al.  Case Western Reserve University Pressure telemetry implant
Buy PDF- 10pp US5209122  1993-05 Matly et al.  Delco Electronics Corporation Pressurer sensor and method for assembly of same
Buy PDF- 13pp US5242863  1993-09 Xiang-Zheng et al.   Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same
Buy PDF- 9pp US5291781  1994-03 Nagata et al.  Yamatake-Honeywell Co., Ltd. Diaphragm-type sensor
Buy PDF- 13pp US5303593  1994-04 Kremidas  MacLean-Fogg Company Strain gauge distribution for resistive strain gauge pressure sensor
       
Foreign References:
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PDF
Publication Date IPC Code Assignee   Title
  JP02134424 1990-05       


Other Abstract Info: DERABS G1999-214163 DERABS G1999-214163

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