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Title: US5965931: Bipolar transistor having base region with coupled delta layers
[ Derwent Title ]

Country: US United States of America

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8 pages

 
Inventor: Wang, Kang L.; Santa Monica, CA
Carns, Timothy K.; Boise, ID
Zheng, Xinyu; Los Angeles, CA

Assignee: The Board of Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 1999-10-12 / 1994-09-15

Application Number: US1994000306795
IPC Code: Advanced: H01L 29/737;
Core: H01L 29/66;
IPC-7: H01L 27/082;
H01L 27/102;
H01L 29/70;
H01L 31/11;

ECLA Code: H01L29/737B; H01L29/737B2;

U.S. Class: Current: 257/585; 257/572; 257/583; 257/E29.189; 257/E29.19;
Original: 257/585; 257/572; 257/583;

Field of Search: 257/585,572,583

Priority Number:
1994-09-15  US1994000306795
1993-04-19  US1993000049197

Abstract: A bipolar transistor includes multiple coupled delta layers in the base region between the emitter and collector regions to enhance carrier mobility and conductance. The delta layers can be varied in number, thickness, and dopant concentration to optimize desired device performance and enhanced mobility and conductivity vertically for emitter to collector and laterally parallel to the delta-doped layers. The transistors can be homojunction devices or heterojunction devices formed in either silicon or III-V semiconductor material.

Attorney, Agent or Firm: Townsend and Townsend and Crew LLP ; Woodward, Henry K. ;

Primary / Asst. Examiners: Meier, Stephen D.;

INPADOC Legal Status: Show legal status actions

       
Related Applications:
Application Number Filed Patent Pub. Date  Title
US1993000049197 1993-04-19       


       
Parent Case:     This is continuation-in-part of copending application U.S. Ser. No. 08/049,197 filed Apr. 19, 1993 for Bipolar Transistor Having Base Region with Coupled Delta Layers.

Family: None
First Claim:
Show all 5 claims		 What is claimed is:     1. A bipolar transistor comprising
  • semiconductor body,
  • a first region in said semiconductor body of a first conductivity type and forming an emitter region,
  • a second region in said semiconductor body of said first conductivity type spaced from said first region and forming a collector region,
  • a third region in said semiconductor body between said first region and said second region and forming a base region, said third region including a plurality of delta-doped layers of a second conductivity type, said delta-doped layers being spaced to allow coupling between delta-doped layers for enhanced mobility and conductivity in a lateral direction of said base region parallel to said first and third regions,
  • said delta-doped layers extending into the emitter region and into said collector region.
    •


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Forward References: Show 8 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (8)   |   Backward references (2)   |   Citation Link

Buy
PDF		 Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 7pp US4926221  1990-05 Levi  AT&T Bell Laboratories Bipolar hot electron transistor
Buy PDF- 10pp US5013685  1991-05 Chiu et al.  AT&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
       
Foreign References: None

Other Abstract Info: CHEMABS 131(19)265780J CHEMABS 131(19)265780J DERABS G1999-579975 DERABS G1999-579975

Other References:
  • Koremer, "Heterostructure Bipolar Transistors and Integrated Circuits," 0018-9219/82/0100-0013, 1982 IEEE, pp. 13-25.
  • Patton, et al., "75-GHz .function.T SiGe-Base Heterojunction Bipolar Transistors," IEEE Electron Device Letters, vol. 11, No. 4, Apr. 1990, pp. 171-173. (3 pages) Cited by 12 patents
  • Malik, et al., "A Planar-Doped 2D-Hole Gas Base AlGaAs/GaAs Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy," IEEE Electron Device Letters, vol. 9, No. 1, pp. 7-9.
  • Kuo, et al., "Planarized Be δ-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy," Japanese Journal of Applied Physics, vol. 30, No. 2B, Feb. 1991, pp.L262-L265. (4 pages) Cited by 2 patents [ISI abstract]


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