Vertically stacked field programmable nonvolatile memory and method of fabrication (US6034882)

Patent	Pub.Date	Inventor	Assignee	Title
US3576549	1971-04	Hess et al.	Cogar Corporation	SEMICONDUCTOR DEVICE, METHOD, AND MEMORY ARRAY
US3582908	1971-06	Koo et al.	Bell Telephone Laboratories, Incorporated	WRITING A READ-ONLY MEMORY WHILE PROTECTING NONSELECTED ELEMENTS
US3634929	1972-01	Yoshida et al.	Tokyo Shibaura Electric Co., Ltd.	METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS
US3671948	1972-06	Cassen et al.	North American Rockwell Corporation	READ-ONLY MEMORY
US3717852	1973-02	Abbas et al.	International Business Machines Corporation	ELECTRONICALLY REWRITABLE READ-ONLY MEMORY USING VIA CONNECTIONS
US3728695	1973-04	Frohman-Bentchkowsky	Intel Corporation	RANDOM-ACCESS FLOATING GATE MOS MEMORY ARRAY
US3787822	1974-01	Rioult	U.S. Philips Corporation	METHOD OF PROVIDING INTERNAL CONNECTIONS IN A SEMICONDUCTOR DEVICE
US3863231	1975-01	Taylor	National Research Development Corporation	READ ONLY MEMORY WITH ANNULAR FUSE LINKS
US3990098	1976-11	Mastrangelo	E. I. Du Pont de Nemours and Co.	Structure capable of forming a diode and associated conductive path
US4146902	1979-03	Tanimoto et al.	Nippon Telegraph and Telephone Public Corp.	Irreversible semiconductor switching element and semiconductor memory device utilizing the same
US4203123	1980-05	Shanks	Burroughs Corporation	Thin film memory device employing amorphous semiconductor materials
US4203158	1980-05	Frohman-Bentchkowsky et al.	Intel Corporation	Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4281397	1981-07	Neal et al.	Texas Instruments Incorporated	Virtual ground MOS EPROM or ROM matrix
US4419741	1983-12	Stewart et al.	RCA Corporation	Read only memory (ROM) having high density memory array with on pitch decoder circuitry
US4420766	1983-12	Kasten	Harris Corporation	Reversibly programmable polycrystalline silicon memory element
US4442507	1984-04	Roesner	Burroughs Corporation	Electrically programmable read-only memory stacked above a semiconductor substrate
US4494135	1985-01	Moussie	U.S. Philips Corporation	Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode
US4499557	1985-02	Holmberg et al.	Energy Conversion Devices, Inc.	Programmable cell for use in programmable electronic arrays
US4507757	1985-03	McElroy	Texas Instruments Incorporated	Avalanche fuse element in programmable memory
US4543594	1985-09	Mohsen et al.	Intel Corporation	Fusible link employing capacitor structure
US4569121	1986-02	Lim et al.	Signetics Corporation	Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4646266	1987-02	Ovshinsky et al.	Energy Conversion Devices, Inc.	Programmable semiconductor structures and methods for using the same
US4820657	1989-04	Hughes et al.	Georgia Tech Research Corporation	Method for altering characteristics of junction semiconductor devices
US4823181	1989-04	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US4876220	1989-10	Mohsen et al.	Actel Corporation	Method of making programmable low impedance interconnect diode element
US4881114	1989-11	Mohsen et al.	Actel Corporation	Selectively formable vertical diode circuit element
US4899205	1990-02	Hamdy et al.	Actel Corporation	Electrically-programmable low-impedance anti-fuse element
US4922319	1990-05	Fukushima	Fujitsu Limited	Semiconductor programmable memory device
US4943538	1990-07	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US5070383	1991-12	Sinar et al.	Zoran Corporation	Programmable memory matrix employing voltage-variable resistors
US5311039	1994-05	Kimura et al.	Seiko Epson Corporation	PROM and ROM memory cells
US5334880	1994-08	Abadeer et al.	International Business Machines Corporation	Low voltage programmable storage element
US5391518	1995-02	Bhushan	VLSI Technology, Inc.	Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes
US5441907	1995-08	Sung et al.	Taiwan Semiconductor Manufacturing Company	Process for manufacturing a plug-diode mask ROM
US5463244	1995-10	De Araujo et al.	Symetrix Corporation	Antifuse programmable element using ferroelectric material
US5536968	1996-07	Crafts et al.	AT&T Global Information Solutions Company	Polysilicon fuse array structure for integrated circuits
US5675547	1997-10	Koga	Sony Corporation	One time programmable read only memory programmed by destruction of insulating layer
US5737259	1998-04	Chang	United Microelectronics Corporation	Method of decoding a diode type read only memory
US5751012	1998-05	Wolstenholme et al.	Micron Technology, Inc.	Polysilicon pillar diode for use in a non-volatile memory cell
US5776810	1998-07	Guterman et al.	Sandisk Corporation	Method for forming EEPROM with split gate source side injection
US5835396	1998-11	Zhang		Three-dimensional read-only memory
US5883409	1999-03	Guterman et al.	Sandisk Corporation	EEPROM with split gate source side injection