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Title: US6096282: Instantaneous synthesis of refractory nitrides from solid precursors
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Country: US United States of America

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11 pages

 
Inventor: Kaner, Richard B.; Santa Monica, CA
Wallace, Charles H.; Corte Madera, CA
Reynolds, Thomas K.; Riverside, CA

Assignee: The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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Published / Filed: 2000-08-01 / 1998-04-23

Application Number: US1998000066722

IPC Code: Advanced: C01B 21/06;
Core: C01B 21/00;
IPC-7: C01B 21/06;

ECLA Code: C01B21/06; C01B21/06F4; C01B21/06F2; C01B21/06K;

U.S. Class: Current: 423/409;
Original: 423/409;

Field of Search: 423/409,411,412

Government Interest:     The high pressure procedure described below was made in part with support from the National Science Foundation Grant Number DMR 9315914 and the ambient pressure procedure using NH4 Cl was made in part with support from the National Science Foundation Grant Number DMR 9704964.

Priority Number:
1998-04-23  US1998000066722
1997-09-09  WO1997US0015859
1996-09-10  US1996000025187P

Abstract: A process for forming high quality crystalline refractory materials, particularly gallium (III) nitride (GaN), from solid precursors. By blending dry reactants, including NH4 Cl, in an oxygen and moisture free environment, placing the reactants in a reaction vessel and in an inert environment, rapidly exposing the reactants to a temperature in excess of about 225° C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.

Attorney, Agent or Firm: Koppel & Jacobs ; Ram, Michael J. ;

Primary / Asst. Examiners: Langel, Wayne;

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Related Applications:
Application Number Filed Patent Pub. Date  Title
US1997PCTUS97158 1997-09-09       


       
Parent Case:

CROSS REFERENCE TO RELATED APPLICATION
    This application is a continuation-in-part of PCT Application No. PCT/US97/15859 filed Sep. 9, 1997 identifying the United States as an elected country, said PCT application claiming priority based on provisional U.S. patent application Ser. No. 60/025,187, filed Sep. 10, 1996.

Designated Country: CA CN EP JP US 

Family: Show 4 known family members

First Claim:
Show all 14 claims
What is claimed is:     1. A method of preparing a metal nitride comprising:
  • a) mixing stoichiometric quantities of a powdered metal halide with a powdered alkali metal nitride to form a substantially uniform blend, said mixing being done in an inert atmosphere,
  • b) adding a predetermined amount of a powdered ammonium halide to the uniform blend to form a reaction mixture while maintaining the inert atmosphere,
  • c) placing the reaction mixture in a reaction vessel without exposing the reaction mixture to a reactive amount of oxygen,
  • d) rapidly heating the reaction mixture to an elevated temperature, said heating causing a chemical reaction to occur and the desired inorganic nitride to be formed, the temperature of the reaction not exceeding about 800° C.; and
  • d) separating the desired inorganic nitride from other compounds formed in the reaction, recovering a pure crystalline nitride.


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Forward References: Show 7 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (7)   |   Backward references (1)   |   Citation Link

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Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 12pp US5453407  1995-09 Chung et al.  National Science Council Method for producing nitride ceramic powders
       
Foreign References:
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Publication Date IPC Code Assignee   Title
  JP53062800 1978-06       
  JP55047211 1980-04       
Buy PDF- 40pp WO9306042 1993-04  C01B 21/00 BERTOT, Jean-Paul PROCESS FOR LOW TEMPERATURE SYNTHESIS OF NITRIDE POWDERS, ESPECIALLY ALUMINIUM NITRIDE 


Other Abstract Info: CHEMABS 128(20)245895K CHEMABS 133(09)124171R CHEMABS 133(09)124171R DERABS C1998-207293

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