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 Title: |
US6120748:
Process for rapid solid-state formation of refractory nitrides
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Kaner, Richard B.; Santa Monica, CA
Wallace, Charles H.; Corte Madera, CA
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
2000-09-19
/ 1999-06-18
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| Application Number: |
US1999000254627
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| IPC Code: |
Advanced:
C01B 21/06;
C01B 21/064;
C01B 21/072;
C01B 21/076;
Core:
C01B 21/00;
IPC-7:
C01B 21/06;
C01B 21/064;
C01B 21/072;
C01B 21/076;
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| U.S. Class: |
Current:
423/290;
423/409;
423/411;
423/412;
Original:
423/290;
423/409;
423/411;
423/412;
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| Field of Search: |
423/409,411,412,290
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| Priority Number: |
| 1999-06-18 |
US1999000254627 |
| 1996-09-10 |
US1996000025187P |
| 1997-09-09 |
WO1997US0015859 |
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| Abstract: |
A process for forming high quality crystalline refractory materials, particularly gallium (Ill) nitride (GaN), from solid precursors. By blending dry reactants in an oxygen and moisture free environment, placing the reactants in a sealed vessel, pressurizing the reactants to in excess of 5 kilobars (5000 atmospheres) and rapidly exposing the reactants to a temperature in excess of about 225° C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.
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| Attorney, Agent or Firm: |
Koppel & Jacobs ;
Ram, Michael J. ;
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| Primary / Asst. Examiners: |
Langel, Wayne;
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| INPADOC Legal Status: |
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Family Legal Status Report
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| Parent Case: |
CROSS REFERENCE TO RELATED APPLICATION
This application claims the priority of provisional U.S. Patent application Ser. No. 60/025,187, filed Sep. 10, 1996.
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| Designated Country: |
CA CN EP JP US
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| Family: |
Show 4 known family members
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First Claim:
Show all 10 claims |
What is claimed is:
1. A method of preparing inorganic nitrides comprising:
- a) forming a chamber for holding reactants therein, said chamber allowing application of a preselected high pressure to said reactants;
- b) applying the preselected high pressure to the reactants;
- c) rapidly heating the reactants, said heating causing a chemical reaction to occur and the desired inorganic nitride to be formed; and
- d) separating the desired inorganic nitride from other compounds formed in the reaction, recovering a pure crystalline nitride
- wherein the inorganic nitrides are selected from the group consisting of gallium (III) nitride, tantalum nitride and boron nitride.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| PCT Number: |
PCT/US97/15859
WO9811017
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| PCT Pub./Filed Dates: |
1998-03-19 / 1997-09-09
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| § 371 / 102(e) Dates: |
1999-06-18 / 1999-06-18
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| Forward References: |
Show 7 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other Abstract Info: |
CHEMABS 128(20)245895K
CHEMABS 133(09)124171R
DERABS C1998-207293
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| Other References: |
Rao and Kaner, "Rapid Solid-State-Precursor Synthesis of Crystalline Boron Nitride", Inorganic Chemistry, vol. 33, No. 25, 1994, Reprint, pp. 3210-3211. (no month).
(2 pages)
[ISI abstract]
Abstract No. 291237, Gillan et al., "Rapid Solid State Synthesis of Refractory Nitrides", XP 2051166. (no date).
Database Derwent, JP 52 021 300 A (Kuratomi T), Feb. 17, 1977, XP 2051167.
"Chemistry of Synthetic High Polymers", Chemical Abstracts, Dec. 12, 1994, vol. 121, No. 24, Columbus, Ohio.
Gillan and Kaner, "Synthesis of Refractory Ceramics via Rapid Metathesis Reactions between Solid-State Precusors", Chem. Mater., 1996, 8, pp. 333-343. (no month).
(11 pages)
Cited by 3 patents
[ISI abstract]
Wiley and Kaner, "Rapid Solid-State Precursor Synthesis of Materials", Science, vol. 255, pp. 1093-1097, Feb. 28, 1992.
(5 pages)
Cited by 4 patents
[ISI abstract]
Xie et al., "A Benzene-Thermal Synthetic Route to Nanocrystalline GaN", Science, vol. 272, pp. 1926-1927, Jun. 28, 1996.
(2 pages)
Cited by 2 patents
[ISI abstract]
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