Molecular wire crossbar memory (US6128214)

Patent	Pub.Date	Inventor	Assignee	Title
US3975623	1976-08	Weinberger	IBM Corporation	Logic array with multiple readout tables
US4208728	1980-06	Blahut et al.	Bell Telephone Laboratories, Incorporated	Programable logic array
US5453970	1995-09	Rust et al.		Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
US5475341	1995-12	Reed	Yale University	Sub-nanoscale electronic systems and devices
US5519629	1996-05	Snider	Hewlett-Packard Company	Tileable gate array cell for programmable logic devices and gate array having tiled gate array cells
US5640343	1997-06	Gallagher et al.	International Business Machines Corporation	Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5729752	1998-03	Snider et al.	Hewlett-Packard Company	Network connection scheme
US5790771	1998-08	Culbertson et al.	Hewlett-Packard Company	Apparatus and method for configuring a reconfigurable electronic system having defective resources
US6026013	2000-02	Peterson	Motorola, Inc.	Quantum random address memory


	Foreign References:			None
	Other References:			J.R. Heath et al, "A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology", Science, vol. 280, pp. 1716-1721 (Jun. 12, 1998). (6 pages) Cited by 15 patents [ISI abstract] L. Guo et al, "Nanoscale Silicon Field Effect Transistors Fabricated Using Imprint Lithography", Applied Physics Letters, vol. 71, pp. 1881-1883 (Sep. 29, 1997). (3 pages) Cited by 18 patents [ISI abstract] A.M. Morales et al, "A Laser Ablation Method For The Synthesis Of Crystalline Semiconductor Nanowires", Science, vol. 279, pp. 208-268 (Jan. 9, 1998). (4 pages) Cited by 79 patents [ISI abstract] J.R. Heath et al, "A Liquid Solution Synthesis Of Single Crystal Germanium Quantum Wires", Chemical Physics Letters, vol. 208, No. 3, 4, pp. 263-268 (Jun. 11, 1993). (6 pages) Cited by 28 patents [ISI abstract] V.P. Menon et al, "Fabrication and Evaluation Of Nanoelectrode Ensembles", Analytical Chemistry, vol. 67, pp. 1920-1928 (Jul. 1, 1995). (9 pages) Cited by 26 patents [ISI abstract] L. Guo et al, "A Silicon Single-Electron Transistor Memory Operating At Room Temperature", Science, vol. 275, pp. 649-651 (Jan. 31, 1997). (3 pages) Cited by 21 patents [ISI abstract] S.J. Tans et al, "Room-Temperature Transistor Based On A Single Carbon Nanotube", Nature, vol. 393, pp. 49-52 (May 7, 1998). (4 pages) Cited by 87 patents [ISI abstract] K.K. Likharev, "Correlated Discrete Transfer Of Single Electrons In Ultrasmall Tunnel Junctions", IBM Journal of Research and Development, vol. 32, No. 1, pp. 144-158 (Jan. 1998). R.E. Jones Jr., et al, "Ferroelectric Non-Volatile Memories For Low-Voltage, Low-Power Applications", Thin Solid Films, vol. 270, pp. 584-588 (Dec. 1, 1995). (5 pages) Cited by 14 patents [ISI abstract] D.B. Amabilino et al, "Aggregation Of Self-Assembling Branched [n]-Rotaxanes", New Journal of Chemistry, vol. 22, No. 9, pp. 959-972 (Sep. 11, 1998). (14 pages) Cited by 7 patents [ISI abstract] T. Vossmeyer et al, "Combinatorial Approaches Toward Patterning Nanocrystals", Journal of Applied Physics, vol. 84, No. 7, pp. 3664-3670 (Oct. 1, 1998). (7 pages) Cited by 32 patents [ISI abstract] D.V. Leff et al, "Thermodynamic Control Of Gold Nanocrystal Size: Experiment And Theory", The Journal of Physical Chemistry, vol. 99, pp. 7036-7041 (May 4, 1995). (6 pages) Cited by 26 patents [ISI abstract] J.D.L. Holloway et al, "Electron-Transfer Reactions Of Metallocenes: Influence Of Metal Oxidation State On Structure And Reacivity", Journal of the American Chemical Society, vol. 101, pp. 2038-2044 (Apr. 11, 1979). (7 pages) Cited by 17 patents C. Mead et al, "Introduction to VLSI Systems", Addison-Wesley, Ch. 3, Section 10, pp. 79-82 (1980).
				Nominate this for the Gallery...


		Copyright © 1997-2010 Thomson Reuters
		Subscriptions \| Web Seminars \| Privacy \| Terms & Conditions \| Site Map \| Contact Us \| Help