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 Title: |
US6159620:
Single-electron solid state electronic device
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Heath, James R.; Santa Monica, CA
Leff, Daniel V.; Palo Alto, CA
Markovich, Gil; Tel Aviv, Israel
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| Assignee: |
The Regents of the University of California, Oakland, CA
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
2000-12-12
/ 1998-03-31
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| Application Number: |
US1998000052235
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| IPC Code: |
Advanced:
C30B 7/00;
H01L 29/76;
H01L 51/00;
Core:
H01L 29/66;
more...
IPC-7:
B32B 15/08;
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| ECLA Code: |
C30B7/00+29/60D; H01L29/76D; T01L51/00T; Y01N4/00; Y01N6/00;
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| U.S. Class: |
Current:
428/615;
257/E29.322;
428/626;
977/937;
Original:
428/615;
428/626;
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| Field of Search: |
428/615,626
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| Priority Number: |
| 1998-03-31 |
US1998000052235 |
| 1997-03-31 |
US1997000042207P |
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| Abstract: |
A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.
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| Attorney, Agent or Firm: |
Oppenheimer Wolff & Donnelly LLP ;
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| Primary / Asst. Examiners: |
Lorin, Francis J.;
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| Maintenance Status: |
CC Certificate of Correction issued
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| INPADOC Legal Status: |
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| Parent Case: |
This application claims the benefit of U.S. Provisional Application No. 60/042,207, filed Mar. 31, 1997.
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| Family: |
None
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First Claim:
Show all 23 claims |
We claim:
1. A solid state electronic device comprising:
- a substrate;
- a first conductive thin film layer deposited on said substrate;
- a thin film nanocrystal layer of organically functionalized metal or metal alloy nanocrystals deposited on and in contact with said first conductive thin layer;
- a dielectric spacer layer in contact with said thin film nanocrystal layer; and
- a second conductive thin film layer deposited on and in contact with said dielectric spacer layer devices exhibiting single-electron behavior.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 93 U.S. patent(s) that reference this one
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