Vertically stacked field programmable nonvolatile memory and method of fabrication (US6185122)


	Parent Case:			This is a divisional of Ser. No. 09/192,883 filed Nov. 16, 1998, now U.S. Pat. No. 6,034,882.
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	First Claim: Show all 59 claims			We claim: 1. A memory array comprising: a first plurality of spaced-apart, parallel, substantially coplanar conductors; a second plurality of spaced-apart, parallel, substantially coplanar conductors disposed generally vertically above and spaced-apart from the first conductors, said first and second conductors being generally orthogonal to one another; and a plurality of first memory cells each comprising a first steering element in contact with a first state change element, each cell directly disposed between one of the first and one of the second conductors and located where a vertical projection of the first conductors intersects the second conductors, the first steering elements being in contact with the second conductors; a third plurality of spaced-apart, parallel, substantially coplanar conductors disposed generally vertically above and spaced-apart from the second conductors, the third conductors running in the same direction as the first conductors; a plurality of second memory cells each comprising a second steering element in contact with a second state change element, each cell directly disposed between one of the second conductors and one of the third conductors and located where a vertical projection of the second conductors intersects the third conductors, the second steering elements being in contact with the second conductors.
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	Forward References:			Show 254 U.S. patent(s) that reference this one

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