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 Title: |
US6194036:
Deposition of coatings using an atmospheric pressure plasma jet
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Babayan, Steve E.; Huntington Beach, CA
Selwyn, Gary S.; Santa Fe, NM
Hicks, Robert F.; Los Angeles, CA
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| Assignee: |
The Regents of the University of California, Los Alamos, NM
other patents from UNIVERSITY OF CALIFORNIA, THE REGENTS OF (599425) (approx. 4,840)
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| Published / Filed: |
2001-02-27
/ 1998-10-20
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| Application Number: |
US1998000176046
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| IPC Code: |
Advanced:
C23C 16/513;
H05H 1/24;
Core:
C23C 16/50;
more...
IPC-7:
C23C 16/513;
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| ECLA Code: |
C23C16/513; H05H1/24;
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| U.S. Class: |
Current:
427/563;
427/579;
427/580;
Original:
427/563;
427/579;
427/580;
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| Field of Search: |
427/563,579,580
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| Priority Number: |
| 1998-10-20 |
US1998000176046 |
| 1997-10-20 |
US1997000062882P |
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| Abstract: |
Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 .ANG./min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.03 as the deposition temperature increases from 115 to 350° C. Infrared spectra of the deposited films at 350° C. show no carbon or hydroxyl ion contamination, indicating excellent material purity.
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| Attorney, Agent or Firm: |
Freund, Samuel M. ;
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| Primary / Asst. Examiners: |
Meeks, Timothy;
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| INPADOC Legal Status: |
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| Parent Case: |
This patent application claims priority from Provisional Patent Application Ser. No. 60/062,822, filed on Oct. 20, 1997.
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| Family: |
None
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First Claim:
Show all 6 claims |
What is claimed is:
1. A method for depositing a material onto a substrate, comprising the steps of:
- (a) generating at least one reactive species in an arcless, atmospheric-pressure, RF plasma discharge in a gas flowing through an annular region between an electrically conducting chamber having a closed end and an open end and a metal electrode located within the chamber and disposed such that the annular region is defined therebetween, whereby said at least one reactive species [flow] flows toward the open end of the chamber;
- (b) introducing a gaseous precursor species of said material into said at least one reactive species within the chamber in the region of the open end thereof and outside of the plasma discharge, said gaseous precursor species being chosen such that said precursor species reacts with at least one of said at least one reactive species, whereby a gaseous jet capable of forming said material exits through the open end of the chamber; and
- (c) placing said substrate in the path of the gaseous jet, whereby said material is deposited on said substrate.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 25 U.S. patent(s) that reference this one
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