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 Title: |
US6314019:
Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Kuekes, Philip J.; Menlo Park, CA
Williams, R. Stanley; Mountain View, CA
Heath, James R.; Santa Monica, CA
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| Assignee: |
Hewlett-Packard Company, Palo Alto, CA
other patents from HEWLETT-PACKARD COMPANY (250060) (approx. 10,220)
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| Published / Filed: |
2001-11-06
/ 1999-03-29
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| Application Number: |
US1999000280225
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| IPC Code: |
Advanced:
G11C 13/02;
Core:
more...
IPC-7:
G11C 11/00;
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| ECLA Code: |
G11C13/02N; G11C13/02; Y01N4/00;
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| U.S. Class: |
Current:
365/151;
365/153;
365/175;
977/708;
977/762;
977/765;
977/936;
Original:
365/151;
365/153;
365/175;
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| Field of Search: |
716/001
365/151,148,103,114,115,175,153
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| Priority Number: |
| 1999-03-29 |
US1999000280225 |
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| Abstract: |
A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
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| Primary / Asst. Examiners: |
Nelms, David; Le, Thong
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| INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report
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| Parent Case: |
CROSS-REFERENCE TO RELATED APPLICATIONS
The present application is related to the following applications: Ser. No. 09/280,189 ("Molecular Wire Crossbar Memory"), now U.S. Pat. No. 6,128,214, issued Oct. 3, 2000; Ser. No. 09/280,045 ("Molecular Wire Crossbar Logic"); Ser. No. 09/280,049 ("Demultiplexer for a Molecular Wire Crossbar Network"); Ser. No. 09/280,188 ("Molecular Wire Transistors") [PD-10981967-1]; and Ser. No. 09/280,048 ("Chemically Synthesized and Assembled Electronic Devices"), all filed on even date herewith. The present application employs the chemical synthesis and assembly techniques disclosed and claimed in Ser. No. 280,048 and the molecular wire transistors disclosed and claimed in Ser. No. 280,188 and is used in the logic circuits disclosed and claimed in Ser. No. 09/280,045 and memory applications as disclosed and claimed in Ser. No. 09/280,189.
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| Family: |
Show 6 known family members
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First Claim:
Show all 49 claims |
What is claimed is:
1. A crossbar array of crossed-wire devices, each device comprising a junction formed by a pair of crossed wires where one wire crosses another and at least one connector species connecting said pair of crossed wires in said junction, said junction having a functional dimension in nanometers, wherein said at least one connector species and said pair of crossed wires form an electrochemical cell, with one set of wires formed above another set of wires.
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| Background / Summary: |
Show background / summary
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| Drawing Descriptions: |
Show drawing descriptions
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| Description: |
Show description
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| Forward References: |
Show 151 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other Abstract Info: |
DERABS C2002-224617
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| Other References: |
J.R. Heath et al, "A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology", Science, vol. 280, pp. 1716-1721 (Jun. 12, 1998).
(6 pages)
Cited by 15 patents
[ISI abstract]
L. Guo et al, "Nanoscale Silicon Field Effect Transistors Fabricated Using Imprint Lithography", Applied Physics Letters, vol. 71, pp. 1881-1883 (Sep. 29, 1997).
(3 pages)
Cited by 18 patents
[ISI abstract]
A.M. Morales et al, "A Laser Ablation Method For The Synthesis Of Crystalline Semiconductor Nanowires", Science, vol. 279, pp. 208-268 (Jan. 9, 1998).
(4 pages)
Cited by 79 patents
[ISI abstract]
J.R. Heath et al, "A Liquid Solution Synthesis Of Single Crystal Germanium Quantum Wires", Chemical Physics Letters, vol. 208, No. 3, 4, pp. 263-268 (Jun. 11, 1993).
(6 pages)
Cited by 28 patents
[ISI abstract]
V.P. Menon et al, "Fabrication and Evaluation Of Nanoelectrode Ensembles", Analytical Chemistry, vol. 67, pp. 1920-1928 (Jul. 1, 1995).
(9 pages)
Cited by 26 patents
[ISI abstract]
L. Guo et al, "A Silicon Single-Electron Transistor Memory Operating At Room Temperature", Science, vol. 275, pp. 649-651 (Jan. 31, 1997).
(3 pages)
Cited by 21 patents
[ISI abstract]
S.J. Tans et al, "Room-Temperature Transistor Based On A Single Carbon Nanotube", Nature, vol. 393, pp. 49-52 (May 7, 1998).
(4 pages)
Cited by 87 patents
[ISI abstract]
K.K. Likharev, "Correlated Discrete Transfer Of Single Electrons In Ultrasmall Tunnel Junctions", IBM Journal of Research and Development, vol. 32, No. 1, pp. 144-158 (Jan. 1998).
R.E. Jones Jr., et al, "Ferroelectric Non-Volatile Memories For Low-Voltage, Low-Power Applications", Thin Solid Films, vol. 270, pp. 584-588 (Dec. 1, 1995).
(5 pages)
Cited by 14 patents
[ISI abstract]
D.B. Amabilino et al, "Aggregation Of Self-Assembling Branched [n]-Rotaxanes", New Journal of Chemistry, vol. 22, No. 9, pp. 959-972 (Sep. 11, 1998).
(14 pages)
Cited by 7 patents
[ISI abstract]
T. Vossmeyer et al, "Combinatorial Approaches Toward Patterning Nanocrystals", Journal of Applied Physics, vol. 84, No. 7, pp. 3664-3670 (Oct. 1, 1998).
(7 pages)
Cited by 32 patents
[ISI abstract]
D.V. Leff et al, "Thermodynamic Control Of Gold Nanocrystal Size: Experiment And Theory", The Journal of Physical Chemistry, vol. 99, pp. 7036-7041 (May 4, 1995).
(6 pages)
Cited by 26 patents
[ISI abstract]
J.D.L. Holloway et al, "Electron-Transfer Reactions Of Metallocenes: Influence Of Metal Oxidation State On Structure And Reacivity", Journal of the American Chemical Society, vol. 101, pp. 2038-2044 (Apr. 11, 1979).
(7 pages)
Cited by 17 patents
C. Mead et al, "Introduction to VLSI Systems", Addison-Wesley, Ch. 3, Section 10, pp. 79-82 (1980).
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| Continuity Data: |
| Application Number | Filed | Notes |
|---|
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US1999000280225 | 1999-03-29 | is a
related to the prior publication |
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US20030067798A1 issued 2003-04-10 Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
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US2002000289703 | 2002-11-06 | is a
division of |
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US2000000558955
| 2000-04-25 |
(granted)
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US6518156 issued 2003-02-11 Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
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US2002000289703 | | is a
division of |
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US2000000558955
| 2000-04-25 |
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US6518156 issued 2003-02-11 Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
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US2000000558955 | 2000-04-25 | is a
continuation in part of |
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>US1999000280225<
| 1999-03-29 |
(granted)
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US6314019 issued 2001-11-06 Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
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US2000000558955 | | is a
continuation in part of |
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>US1999000280225<
| 1999-03-29 |
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US6314019 issued 2001-11-06 2001-11-06 Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
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