Vertically stacked field programmable nonvolatile memory and method of fabrication (US6351406)

Application Number	Filed	Patent	Pub. Date	Title
US1999000469658	1999-12-22		2001-02-06	Vertically stacked field programmable nonvolatile memory and method of fabrication
US1998000192882	1998-11-16		2000-03-07	Vertically stacked field programmable nonvolatile memory and method of fabrication


	Parent Case:			This application is a continuation of Ser. No. 09/469,658, filed on Dec. 22, 1999, now U.S. Pat. No. 6,185,122; which is a division of application Ser. No. 09/192,883 filed on Nov. 16, 1998, now U.S. Pat. No. 6,034,882.
	Family:			Show 31 known family members
	First Claim: Show all 26 claims			We claim: 1. A memory comprising: a semiconductor substrate having peripheral circuits for the memory; a memory array having a plurality of levels where each level includes a plurality of memory cells formed above the substrate, the memory cells at each level being coupled to a plurality of first and second lines; and a plurality of vias for providing electrical connections between at least the first lines in more than one of the levels and the peripheral circuits of the substrate, each of the vias extending through more than one of the levels and contacting first lines in more than one level such that fewer than one via mask is needed per level.
	Background / Summary:			Show background / summary
	Drawing Descriptions:			Show drawing descriptions
	Description:			Show description
	Forward References:			Show 103 U.S. patent(s) that reference this one

U.S. References:

Go to Result Set: All U.S. references | Forward references (103) | Backward references (57) | Citation Link

Patent	Pub.Date	Inventor	Assignee	Title
US3576549	1971-04	Hess et al.	Cogar Corporation	SEMICONDUCTOR DEVICE, METHOD, AND MEMORY ARRAY
US3582908	1971-06	Kee	Bell Telephone Laboratories, Incorporated	WRITING A READ-ONLY MEMORY WHILE PROTECTING NONSELECTED ELEMENTS
US3634929	1972-01	Yoshida et al.	Tokyo Shibaura Electric Co., Ltd.	METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS
US3671948	1972-06	Cassen et al.	North American Rockwell Corporation	READ-ONLY MEMORY
US3717852	1973-02	Abbas et al.	International Business Machines Corporation	ELECTRONICALLY REWRITABLE READ-ONLY MEMORY USING VIA CONNECTIONS
US3728695	1973-04	Frohman-Bentchkowsky	Intel Corporation	RANDOM-ACCESS FLOATING GATE MOS MEMORY ARRAY
US3787822	1974-01	Rioult	U.S. Philips Corporation	METHOD OF PROVIDING INTERNAL CONNECTIONS IN A SEMICONDUCTOR DEVICE
US3990098	1976-11	Mastrangelo	E. I. Du Pont de Nemours and Co.	Structure capable of forming a diode and associated conductive path
US4146902	1979-03	Tanimoto et al.	Nippon Telegraph and Telephone Public Corp.	Irreversible semiconductor switching element and semiconductor memory device utilizing the same
US4203123	1980-05	Shanks	Burroughs Corporation	Thin film memory device employing amorphous semiconductor materials
US4203158	1980-05	Frohman-Bentchkowsky et al.	Intel Corporation	Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4272880	1981-06	Pashley	Intel Corporation	MOS/SOS Process
US4281397	1981-07	Neal et al.	Texas Instruments Incorporated	Virtual ground MOS EPROM or ROM matrix
US4419741	1983-12	Stewart et al.	RCA Corporation	Read only memory (ROM) having high density memory array with on pitch decoder circuitry
US4420766	1983-12	Kasten	Harris Corporation	Reversibly programmable polycrystalline silicon memory element
US4442507	1984-04	Roesner	Burroughs Corporation	Electrically programmable read-only memory stacked above a semiconductor substrate
US4489478	1984-12	Sakurai	Fujitsu Limited	Process for producing a three-dimensional semiconductor device
US4494135	1985-01	Moussie	U.S. Philips Corporation	Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode
US4499557	1985-02	Holmberg et al.	Energy Conversion Devices, Inc.	Programmable cell for use in programmable electronic arrays
US4507757	1985-03	McElroy	Texas Instruments Incorporated	Avalanche fuse element in programmable memory
US4543594	1985-09	Mohsen et al.	Intel Corporation	Fusible link employing capacitor structure
US4569121	1986-02	Lim et al.	Signetics Corporation	Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4646266	1987-02	Ovshinsky et al.	Energy Conversion Devices, Inc.	Programmable semiconductor structures and methods for using the same
US4677742	1987-07	Johnson	Energy Conversion Devices, Inc.	Electronic matrix arrays and method for making the same
US4820657	1989-04	Hughes et al.	Georgia Tech Research Corporation	Method for altering characteristics of junction semiconductor devices
US4823181	1989-04	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US4876220	1989-10	Mohsen et al.	Actel Corporation	Method of making programmable low impedance interconnect diode element
US4881114	1989-11	Mohsen et al.	Actel Corporation	Selectively formable vertical diode circuit element
US4899205	1990-02	Hamdy et al.	Actel Corporation	Electrically-programmable low-impedance anti-fuse element
US4922319	1990-05	Fukushima	Fujitsu Limited	Semiconductor programmable memory device
US4943538	1990-07	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US5070383	1991-12	Sinar et al.	Zoran Corporation	Programmable memory matrix employing voltage-variable resistors
US5070384	1991-12	McCollum et al.	Actel Corporation	Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5306935	1994-04	Esquivel et al.	Texas Instruments Incorporated	Method of forming a nonvolatile stacked memory
US5311039	1994-05	Kimura et al.	Seiko Epson Corporation	PROM and ROM memory cells
US5334880	1994-08	Abadeer et al.	International Business Machines Corporation	Low voltage programmable storage element
US5391518	1995-02	Bhusan	VLSI Technology, Inc.	Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes
US5391917	1995-02	Gilmour et al.	International Business Machines Corporation	Multiprocessor module packaging
US5427979	1995-06	Chang	VLSI Technology, Inc.	Method for making multi-level antifuse structure
US5441907	1995-08	Sung et al.	Taiwan Semiconductor Manufacturing Company	Process for manufacturing a plug-diode mask ROM
US5463244	1995-10	De Araujo et al.	Symetrix Corporation	Antifuse programmable element using ferroelectric material
US5535156	1996-07	Levy et al.	California Institute of Technology	Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
US5536968	1996-07	Crafts et al.	AT&T Global Information Solutions Company	Polysilicon fuse array structure for integrated circuits
US5675547	1997-10	Koga	Sony Corporation	One time programmable read only memory programmed by destruction of insulating layer
US5737259	1998-04	Chang	United Microelectronics Corporation	Method of decoding a diode type read only memory
US5745407	1998-04	Levy et al.	California Institute of Technology	Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
US5751012	1998-05	Wolstenholme et al.	Micron Technology, Inc.	Polysilicon pillar diode for use in a non-volatile memory cell
US5776810	1998-07	Guterman et al.	Sandisk Corporation	Method for forming EEPROM with split gate source side injection
US5801437	1998-09	Burns	Staktek Corporation	Three-dimensional warp-resistant integrated circuit module method and apparatus
US5835396	1998-11	Zhang		Three-dimensional read-only memory
US5854534	1998-12	Beilin et al.	Fujitsu Limited	Controlled impedence interposer substrate
US5883409	1999-03	Guterman et al.	Sandisk Corporation	EEPROM with split gate source side injection
US5903059	1999-05	Bertin et al.	International Business Machines Corporation	Microconnectors
US5960539	1999-10	Burns	Staktek Corporation	Method of making high density integrated circuit module
US5978258	1999-11	Manning	Micron Technology, Inc.	MOS diode for use in a non-volatile memory cell background
US6034882	2000-03	Johnson et al.	Matrix Semiconductor, Inc.	Vertically stacked field programmable nonvolatile memory and method of fabrication
US6049123	2000-04	Burns	Staktek Corporation	Ultra high density integrated circuit packages