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Title: |
US6385074:
Integrated circuit structure including three-dimensional memory array
[ Derwent Title ]

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Country: |
US United States of America

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Inventor: |
Johnson, Mark G.; Los Altos, CA
Lee, Thomas H.; Cupertino, CA
Subramanian, Vivek; Redwood City, CA
Farmwald, Paul Michael; Portola Valley, CA
Cleeves, James M.; Redwood City, CA

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Assignee: |
Matrix Semiconductor, Inc., Santa Clara, CA
other patents from MATRIX SEMICONDUCTOR, INC. (765549) (approx. 49)
News, Profiles, Stocks and More about this company

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Published / Filed: |
2002-05-07
/ 2000-12-22

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Application Number: |
US2000000748816

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IPC Code: |
Advanced:
G11C 11/56;
G11C 17/14;
G11C 17/16;
H01L 27/102;
Core:
more...
IPC-7:
G11C 17/00;

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ECLA Code: |
H01L27/102D; G11C11/56R; G11C17/14; G11C17/16; H01L27/02B; T01L27/115;

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U.S. Class: |
Current:
365/103;
257/E27.073;
365/130;
365/230.06;
Original:
365/103;
365/230.06;
365/130;

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Field of Search: |
365/103,63,52,225.7,130,230.06,226

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Priority Number: |

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Abstract: |
An integrated circuit device includes a three-dimensional memory array and array terminal circuitry for providing to selected memory cells of the array a write voltage different from a read voltage. Neither voltage is necessarily equal to a VDD power supply voltage supplied to the integrated circuit. The write voltage, particularly if greater than VDD, may be generated by an on-chip voltage generator, such as a charge pump, which may require an undesirably large amount of die area, particularly relative to a higher bit density three-dimensional memory array formed entirely in layers above a semiconductor substrate. In several preferred embodiments, the area directly beneath a memory array is advantageously utilized to layout at least some of the write voltage generator, thus locating the generator near the selected memory cells during a write operation.

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Attorney, Agent or Firm: |
Zagorin, O'Brien & Graham, LLP ;

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Primary / Asst. Examiners: |
Nelms, David; Le, Thong

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INPADOC Legal Status: |
Show legal status actions
Family Legal Status Report

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Parent Case: |
CROSS-REFERENCE TO RELATED APPLICATION(S)
This application is a continuation-in-part of commonly-assigned application Ser. No. 09/469,658, filed Dec. 22, 1999, now U.S. Pat. No. 6,185,122, entitled "Vertically Stacked Field Programmable Non-Volatile Memory and Method of Fabrication" and naming Mark G. Johnson, Thomas IT. Lee, Vivek Subramanian, Paul Michael Farmwald, and James M. Cleeves as inventors, which is incorporated herein by reference in its entirety, and which is a divisional of application Ser. No 09/192,883, filed Nov. 16, 1998, now U.S. Pat. No. 6,034,882, entitled "Vertically Stackcd Field Programmable Non-Volatile Memory and Method of Fabrication" and naming Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, and James M. Cleeves as inventors, which is incorporated herein by reference in its entirety.

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Designated Country: |
AE AL AM AP AT AZ BA BB BG BR BY CA CH CU CZ DK EA EE ES FI GD GE GH GM HR HU ID IL IN IS KE KG KP DE FR GB

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Family: |
Show 36 known family members

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First Claim:
Show all 51 claims |
What is claimed is:
1. An integrated circuit device comprising:
- a three-dimensional array of memory cells; and
- array terminal circuitry coupled to the memory array for providing to at least one selected memory cell of the array a read voltage to read the at least one selected memory cell and a write voltage to write the at least one selected memory cell; and
- a voltage generator circuit to generate the write voltage.

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Background / Summary: |
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Drawing Descriptions: |
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Description: |
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Forward References: |
Show 33 U.S. patent(s) that reference this one

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U.S. References: |
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All U.S. references
| Forward references (33)
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Backward references (64)
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Citation Link

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Foreign References: |
None

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Other Abstract Info: |
DERABS C2002-506579

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Other References: |
U.S. Pat. application No. 09/748,815, files Dec. 22, 2000, entitled "Charge Pump Circuit," naming inventors Mark G. Johnson, Joseph G. Nolan III, and Matthew P. Crowle, p. 39.
U.S. Pat. application No. 09/560,626, filed Apr. 28, 2000, entitled "Three-Dimensional Memory Array and Method of Fabrication," naming inventor N. Johan Knall, p. 48.

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