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Title: US6385074: Integrated circuit structure including three-dimensional memory array
[ Derwent Title ]


Country: US United States of America

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13 pages

 
Inventor: Johnson, Mark G.; Los Altos, CA
Lee, Thomas H.; Cupertino, CA
Subramanian, Vivek; Redwood City, CA
Farmwald, Paul Michael; Portola Valley, CA
Cleeves, James M.; Redwood City, CA

Assignee: Matrix Semiconductor, Inc., Santa Clara, CA
other patents from MATRIX SEMICONDUCTOR, INC. (765549) (approx. 49)
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Published / Filed: 2002-05-07 / 2000-12-22

Application Number: US2000000748816

IPC Code: Advanced: G11C 11/56; G11C 17/14; G11C 17/16; H01L 27/102;
Core: more...
IPC-7: G11C 17/00;

ECLA Code: H01L27/102D; G11C11/56R; G11C17/14; G11C17/16; H01L27/02B; T01L27/115;

U.S. Class: Current: 365/103; 257/E27.073; 365/130; 365/230.06;
Original: 365/103; 365/230.06; 365/130;

Field of Search: 365/103,63,52,225.7,130,230.06,226

Priority Number:
2000-12-22  US2000000748816
1999-12-22  US1999000469658
1998-11-16  US1998000192883

Abstract:     An integrated circuit device includes a three-dimensional memory array and array terminal circuitry for providing to selected memory cells of the array a write voltage different from a read voltage. Neither voltage is necessarily equal to a VDD power supply voltage supplied to the integrated circuit. The write voltage, particularly if greater than VDD, may be generated by an on-chip voltage generator, such as a charge pump, which may require an undesirably large amount of die area, particularly relative to a higher bit density three-dimensional memory array formed entirely in layers above a semiconductor substrate. In several preferred embodiments, the area directly beneath a memory array is advantageously utilized to layout at least some of the write voltage generator, thus locating the generator near the selected memory cells during a write operation.

Attorney, Agent or Firm: Zagorin, O'Brien & Graham, LLP ;

Primary / Asst. Examiners: Nelms, David; Le, Thong

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Related Applications:
Application Number Filed Patent Pub. Date  Title
US1999000469658 1999-12-22    2001-02-06  Vertically stacked field programmable nonvolatile memory and method of fabrication
US1998000192883 1998-11-16    2000-03-07  Vertically stacked field programmable nonvolatile memory and method of fabrication


       
Parent Case:

CROSS-REFERENCE TO RELATED APPLICATION(S)
    This application is a continuation-in-part of commonly-assigned application Ser. No. 09/469,658, filed Dec. 22, 1999, now U.S. Pat. No. 6,185,122, entitled "Vertically Stacked Field Programmable Non-Volatile Memory and Method of Fabrication" and naming Mark G. Johnson, Thomas IT. Lee, Vivek Subramanian, Paul Michael Farmwald, and James M. Cleeves as inventors, which is incorporated herein by reference in its entirety, and which is a divisional of application Ser. No 09/192,883, filed Nov. 16, 1998, now U.S. Pat. No. 6,034,882, entitled "Vertically Stackcd Field Programmable Non-Volatile Memory and Method of Fabrication" and naming Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, and James M. Cleeves as inventors, which is incorporated herein by reference in its entirety.

Designated Country: AE AL AM AP AT AZ BA BB BG BR BY CA CH CU CZ DK EA EE ES FI GD GE GH GM HR HU ID IL IN IS KE KG KP  DE FR GB 

Family: Show 36 known family members

First Claim:
Show all 51 claims
What is claimed is:     1. An integrated circuit device comprising:
  • a three-dimensional array of memory cells; and
  • array terminal circuitry coupled to the memory array for providing to at least one selected memory cell of the array a read voltage to read the at least one selected memory cell and a write voltage to write the at least one selected memory cell; and
  • a voltage generator circuit to generate the write voltage.


Background / Summary: Show background / summary

Drawing Descriptions: Show drawing descriptions

Description: Show description

Forward References: Show 33 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (33)   |   Backward references (64)   |   Citation Link

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Buy PDF- 7pp US3671948  1972-06 Cassen et al.  North American Rockwell Corporation READ-ONLY MEMORY
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  US3728695  1973-04 Frohman-Bentchkowsky  Intel Corporation RANDOM-ACCESS FLOATING GATE MOS MEMORY ARRAY
Buy PDF- 7pp US3787822  1974-01 Rioult  U.S. Philips Corporation METHOD OF PROVIDING INTERNAL CONNECTIONS IN A SEMICONDUCTOR DEVICE
Buy PDF- 14pp US3863231  1975-01 Taylor  National Research Development Corporation READ ONLY MEMORY WITH ANNULAR FUSE LINKS
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Buy PDF- 14pp US4489478  1984-12 Sakurai  Fujitsu Limited Process for producing a three-dimensional semiconductor device
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Buy PDF- 23pp US5835396  1998-11 Zhang   Three-dimensional read-only memory
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Buy PDF- 38pp US6034882  2000-03 Johnson et al.  Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
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Foreign References: None

Other Abstract Info: DERABS C2002-506579

Other References:
  • U.S. Pat. application No. 09/748,815, files Dec. 22, 2000, entitled "Charge Pump Circuit," naming inventors Mark G. Johnson, Joseph G. Nolan III, and Matthew P. Crowle, p. 39.
  • U.S. Pat. application No. 09/560,626, filed Apr. 28, 2000, entitled "Three-Dimensional Memory Array and Method of Fabrication," naming inventor N. Johan Knall, p. 48.


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