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Title: US6410934: Silicon nanoparticle electronic switches
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Country: US United States of America

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15 pages

 
Inventor: Nayfeh, Munir H.; Urbana, IL
Therrien, Joel; Urbana, IL
Smith, Adam D.; Urbana, IL

Assignee: The Board of Trustees of the University of Illinois, Urbana, IL
other patents from UNIVERSITY OF ILLINOIS (599600) (approx. 349)
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Published / Filed: 2002-06-25 / 2001-02-09

Application Number: US2001000781147

IPC Code: Advanced: H01L 21/335; H01L 29/76;
IPC-7: H01L 29/06;

ECLA Code: B82Y15/00; B82Y10/00; H01L29/66M6T6D; H01L29/76D;

U.S. Class: 257/014; 257/017; 257/030; 257/039;

Field of Search: 257/014,17,30,37,39

Priority Number:
2001-02-09  US2001000781147

Abstract:     An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (~1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles in a body of the MOSFET, with the gate and substrate forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.

Attorney, Agent or Firm: Greer, Burns & Crain, Ltd. ;

Primary / Asst. Examiners: Crane, Sara;

Maintenance Status: E2 Expired  Check current status
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Parent Case:

REFERENCE TO RELATED APPLICATIONS
    This application is related to and incorporates by reference the following prior co-pending applications to Nayfeh et al:
    Ser. No. 09/426,389, entitled SILICON NANOPARTICLES AND METHOD FOR PRODUCING THE SAME, filed on Oct. 22, 1999;
    Ser. No. 09/496,506, filed on Feb. 2, 2000, entitled SILICON NANOPARTICLES FIELD EFFECT TRANSISTOR AND TRANSISTOR MEMORY DEVICE.
    Another commonly owned application concerning silicon nanoparticles is the application to Nayfeh et al., Ser. No. 09/426,204, entitled SILICON NANOPARTICLE STIMULATED EMISSION DEVICES, filed on Oct. 25, 1999. Still another commonly owned application concerning silicon nanoparticles is the application to Nayfeh et al. Ser. No. 09/572,121, filed on May 17, 2000 and entitled SILICON NANOPARTICLE MICROCRYSTAL NONLINEAR OPTICAL DEVICES.

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First Claim:
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What is claimed is:     1. An electronic switch, the switch comprising a pair of electrodes, and a film of uniform silicon nanoparticles between the pair of electrodes, the silicon nanoparticles dimensioned of approximately one nanometer with about one part per thousand being dimensioned greater than 1 nm.

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Forward References: Show 10 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (10)   |   Backward references (15)   |   Citation Link

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Foreign References: None

Other References:
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