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Title: US6410934: Silicon nanoparticle electronic switches
[ Derwent Title ]
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Country: US United States of America

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15 pages

Inventor: Nayfeh, Munir H.; Urbana, IL
Therrien, Joel; Urbana, IL
Smith, Adam D.; Urbana, IL

Assignee: The Board of Trustees of the University of Illinois, Urbana, IL
other patents from UNIVERSITY OF ILLINOIS (599600) (approx. 349)
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Published / Filed: 2002-06-25 / 2001-02-09

Application Number: US2001000781147

IPC Code: Advanced: H01L 21/335; H01L 29/76;
IPC-7: H01L 29/06;

ECLA Code: B82Y15/00; B82Y10/00; H01L29/66M6T6D; H01L29/76D;

U.S. Class: 257/014; 257/017; 257/030; 257/039;

Field of Search: 257/014,17,30,37,39

Priority Number:
2001-02-09  US2001000781147

Abstract:     An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (~1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles in a body of the MOSFET, with the gate and substrate forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.

Attorney, Agent or Firm: Greer, Burns & Crain, Ltd. ;

Primary / Asst. Examiners: Crane, Sara;

Maintenance Status: E2 Expired  Check current status
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Parent Case:

    This application is related to and incorporates by reference the following prior co-pending applications to Nayfeh et al:
    Ser. No. 09/426,389, entitled SILICON NANOPARTICLES AND METHOD FOR PRODUCING THE SAME, filed on Oct. 22, 1999;
    Another commonly owned application concerning silicon nanoparticles is the application to Nayfeh et al., Ser. No. 09/426,204, entitled SILICON NANOPARTICLE STIMULATED EMISSION DEVICES, filed on Oct. 25, 1999. Still another commonly owned application concerning silicon nanoparticles is the application to Nayfeh et al. Ser. No. 09/572,121, filed on May 17, 2000 and entitled SILICON NANOPARTICLE MICROCRYSTAL NONLINEAR OPTICAL DEVICES.

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First Claim:
Show all 5 claims
What is claimed is:     1. An electronic switch, the switch comprising a pair of electrodes, and a film of uniform silicon nanoparticles between the pair of electrodes, the silicon nanoparticles dimensioned of approximately one nanometer with about one part per thousand being dimensioned greater than 1 nm.

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Forward References: Show 10 U.S. patent(s) that reference this one

U.S. References: Go to Result Set: All U.S. references   |  Forward references (10)   |   Backward references (15)   |   Citation Link

Patent  Pub.Date  Inventor Assignee   Title
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Get PDF - 11pp US5690807  1997-11 Clark, Jr. et al.  Massachusetts Institute of Technology Method for producing semiconductor particles
Get PDF - 12pp US5695617  1997-12 Graiver et al.  Dow Corning Corporation Silicon nanoparticles
Get PDF - 15pp US5714766  1998-02 Chen et al.  International Business Machines Corporation Nano-structure memory device
Get PDF - 34pp US5747180  1998-05 Miller et al.  University of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
Get PDF - 5pp US5770022  1998-06 Chang et al.  Dow Corning Corporation Method of making silica nanoparticles
Get PDF - 7pp US5891548  1999-04 Graiver et al.  Dow Corning Corporation Encapsulated silica nanoparticles
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Get PDF - 23pp US5932889  1999-08 Matsumura et al.  Sanyo Electric Co., Ltd. Semiconductor device with floating quantum box
Get PDF - 11pp US5942748  1999-08 Russell et al.  The United States of America as represented by the Secretary of the Navy Liquid level sensor and detector
Get PDF - 24pp US6060743  2000-05 Sugiyama et al.  Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
Get PDF - 38pp US6326311  2001-12 Ueda et al.  Sharp Kabushiki Kaisha Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure
Foreign References: None

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