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 Title: |
US6455908:
Multispectral radiation detectors using strain-compensating superlattices
[ Derwent Title ]
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| Country: |
US United States of America
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| Inventor: |
Johnson, Jeffery L.; Sugar Land, TX
Lin, Chih-Hsiang; Sugar Land, TX
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| Assignee: |
Applied Optoelectronics, Inc., Sugar Land, TX
other patents from APPLIED OPTOELECTRONICS, INC. (801357) (approx. 20)
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| Published / Filed: |
2002-09-24
/ 2001-03-09
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| Application Number: |
US2001000802368
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| IPC Code: |
Advanced:
H01L 31/0352;
H01L 31/109;
Core:
H01L 31/0248;
H01L 31/102;
IPC-7:
H01L 31/00;
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| ECLA Code: |
H01L31/0352B; H01L31/109;
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| U.S. Class: |
257/440;
257/184;
257/190;
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| Field of Search: |
257/190
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| Priority Number: |
| 2001-03-09 |
US2001000802368 |
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| Abstract: |
A multispectral radiation detector for detecting radiation in at least two spectral bands, comprises a substrate and a layer stack grown on the substrate. The layer stack comprises at least first and second photodiodes, each photodiode having at least one strain-compensating superlattice absorbing layer substantially lattice matched to adjacent layers of the detector. Each strain-compensating superlattice absorbing layer has an energy gap responsive to radiation energy in a corresponding spectral region and different from the energy gaps of other strain-compensating superlattice absorbing layers of the detector.
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| Attorney, Agent or Firm: |
Kinsella, N. Stephen ;
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| Primary / Asst. Examiners: |
Chaudhuri, Olik; Wille, Douglas A.
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| Maintenance Status: |
CC Certificate of Correction issued
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| INPADOC Legal Status: |
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| Family: |
Show 2 known family members
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First Claim:
Show all 16 claims |
What is claimed is:
1. A radiation detector for detecting radiation directed into the radiation detector, the radiation detector comprising:
- a substrate: and
- a layer stack grown on the substrate, the layer stack comprising first and second photodiodes having respective first and second strain-compensating superlattice absorbing layers, each of the strain-compensating superlattice absorbing layers being substantially lattice matched to adjacent layers of the radiation detector and having an energy gap responsive to radiation energy in a corresponding spectral region and different from the energy gap of other strain-compensating superlattice absorbing layer of the radiation detector, the layer stack further comprising a transparent barrier layer between said fist and second strain-compensating superlattice absorbing layers, wherein the first and second strain-compensating superlattice absorbing layers are either n-type or p-type and the transparent barrier layer has a conductivity type opposite to that of the strain-compensating superlattice absorbing layers, whereby the first strain-compensating superlattice absorbing layer, the transparent barrier layer, and the second strain-compensating superlattice absorbing layer form either an n-p-n or p-n-p structure.
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| Background / Summary: |
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| Drawing Descriptions: |
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| Description: |
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| Forward References: |
Show 6 U.S. patent(s) that reference this one
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| Foreign References: |
None
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| Other References: |
Johnson, J. L. et al., "Electrical and Optical Properties of Infrared Photodiodes Using the InAs/Ga1 -x Inx Sb Superlattice in Heterojunctions with GaSb," J. Appl. Phys. 80(2), (1996), pp. 1116-1127.
Burkle, L. et al., "Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12 µm Range," Material Research Society Symposium Proceedings, vol. 607, (2000), p. 77.
Fuchs, F. et al., "InAs/Ga1 -x Inx Sb Infrared Superlattice Photodiodes for Infrared Detection," Proc. SPIE, vol. 3287, (1998) p. 14.
Willardson, R.K. and Beer, Albert C., eds. (New York: Academic Press, 1990), Semiconductors and Semimetals, vol. 32, Strained Layer Superlattices: Physics, Chapter 1, pp. 1-15.
Fuchs, F. et al., "Optoelectronic Properties of Photodiodes for the Mid-and Far-Infrared Based on the InAs/GaSb/A1Sb Materials Family," Presented at Photonics West 2001 SPIE Conference, San Jose, CA (Jan. 2001) pp. 1-12.
de Lyon, T. et al., "Molecular Beam Epitaxial Growth of HgCdTe Midwave Infrared Multispectral Detectors," J. Vac. Sci. Technol. B. 16(3), 1998, pp. 1321-1325.
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