Vertically stacked field programmable nonvolatile memory and method of fabrication (US6483736)

Application Number	Filed	Pub. Date	Title
US2000000714440	2000-11-15
US1999000469658	1999-12-22	2001-02-06	Vertically stacked field programmable nonvolatile memory and method of fabrication
US1998000192883	1998-11-16	2000-03-07	Vertically stacked field programmable nonvolatile memory and method of fabrication


	Parent Case:			This application is a continuation of application Ser. No. 09/714,440, filed Nov. 15, 2000, pending, which is a continuation of application Ser. No. 09/469,658, filed Dec. 22, 1999, now U.S. Pat. No. 6,185,122, which is a divisional of application Ser. No. 09/192,883, filed Nov. 16, 1998, now U.S. Pat. No. 6,034,882, which is hereby incorporated by reference herein.
	Designated Country:			AE AL AM AP AT AZ BA BB BG BR BY CA CH CU CZ DK EA EE ES FI GD GE GH GM HR HU ID IL IN IS KE KG KP DE FR GB
	Family:			Show 36 known family members
	First Claim: Show all 20 claims			We claim: 1. A 3-dimensional memory array built above a substrate, the memory array comprising: N layers of memory cells; N+1 layers of conductors; said memory cells and conductors fabricated using no more than N+1 masks.
	Background / Summary:			Show background / summary
	Drawing Descriptions:			Show drawing descriptions
	Description:			Show description
	Forward References:			Show 92 U.S. patent(s) that reference this one

U.S. References:

Go to Result Set: All U.S. references | Forward references (92) | Backward references (129) | Citation Link

Patent	Pub.Date	Inventor	Assignee	Title
US3414892	1968-12	McCormack et al.		MEANS INTERCONNECTING PRINTED CIRCUIT MEMORY PLANES
US3432827	1969-03	Sarno		STACKED MAGNETIC MEMORY SYSTEM
US3576549	1971-04	Hess et al.	Cogar Corporation	SEMICONDUCTOR DEVICE, METHOD, AND MEMORY ARRAY
US3582908	1971-06	Koo	Bell Telephone Laboratories, Incorporated	WRITING A READ-ONLY MEMORY WHILE PROTECTING NONSELECTED ELEMENTS
US3634929	1972-01	Yoshida et al.	Tokyo Shibaura Electric Co., Ltd.	METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS
US3671948	1972-06	Cassen et al.	North American Rockwell Corporation	READ-ONLY MEMORY
US3717852	1973-02	Abbas et al.	International Business Machines Corporation	ELECTRONICALLY REWRITABLE READ-ONLY MEMORY USING VIA CONNECTIONS
US3728695	1973-04	Frohman-Bentchkowsky et al.	Intel Corporation	RANDOM-ACCESS FLOATING GATE MOS MEMORY ARRAY
US3787822	1974-01	Rioult	U.S. Philips Corporation	METHOD OF PROVIDING INTERNAL CONNECTIONS IN A SEMICONDUCTOR DEVICE
US3863231	1975-01	Taylor	National Research Development Corporation	READ ONLY MEMORY WITH ANNULAR FUSE LINKS
US3990098	1976-11	Mastrangelo	E. I. Du Pont de Nemours and Co.	Structure capable of forming a diode and associated conductive path
US4146902	1979-03	Tanimoto et al.	Nippon Telegraph and Telephone Public Corp.	Irreversible semiconductor switching element and semiconductor memory device utilizing the same
US4203123	1980-05	Shanks	Burroughs Corporation	Thin film memory device employing amorphous semiconductor materials
US4203158	1980-05	Frohman-Bentchkowsky et al.	Intel Corporation	Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4229757	1980-10	Moussie	U.S. Philips Corporation	Programmable memory cell having semiconductor diodes
US4272880	1981-06	Pashley	Intel Corporation	MOS/SOS Process
US4281397	1981-07	Neal et al.	Texas Instruments Incorporated	Virtual ground MOS EPROM or ROM matrix
US4419741	1983-12	Stewart et al.	RCA Corporation	Read only memory (ROM) having high density memory array with on pitch decoder circuitry
US4420766	1983-12	Kasten	Harris Corporation	Reversibly programmable polycrystalline silicon memory element
US4442507	1984-04	Roesner	Burroughs Corporation	Electrically programmable read-only memory stacked above a semiconductor substrate
US4489478	1984-12	Sakurai	Fujitsu Limited	Process for producing a three-dimensional semiconductor device
US4494135	1985-01	Moussie	U.S. Philips Corporation	Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode
US4498226	1985-02	Inoue et al.	Tokyo Shibaura Denki Kabushiki Kaisha	Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy
US4499557	1985-02	Holmberg et al.	Energy Conversion Devices, Inc.	Programmable cell for use in programmable electronic arrays
US4500905	1985-02	Shibata	Tokyo Shibaura Denki Kabushiki Kaisha	Stacked semiconductor device with sloping sides
US4507757	1985-03	McElroy	Texas Instruments Incorporated	Avalanche fuse element in programmable memory
US4535424	1985-08	Reid	Texas Instruments Incorporated	Solid state three dimensional semiconductor memory array
US4543594	1985-09	Mohsen et al.	Intel Corporation	Fusible link employing capacitor structure
US4569121	1986-02	Lim et al.	Signetics Corporation	Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4630096	1986-12	Drye et al.	Motorola, Inc.	High density IC module assembly
US4646266	1987-02	Ovshinsky et al.	Energy Conversion Devices, Inc.	Programmable semiconductor structures and methods for using the same
US4672577	1987-06	Hirose et al.	Hiroshima University	Three-dimensional integrated circuit with optically coupled shared memories
US4677742	1987-07	Johnson	Energy Conversion Devices, Inc.	Electronic matrix arrays and method for making the same
US4710798	1987-12	Marcantonio	Northern Telecom Limited	Integrated circuit chip package
US4811082	1989-03	Jacobs et al.	International Business Machines Corporation	High performance integrated circuit packaging structure
US4820657	1989-04	Hughes et al.	Georgia Tech Research Corporation	Method for altering characteristics of junction semiconductor devices
US4823181	1989-04	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US4855953	1989-08	Tsukamoto et al.	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having stacked memory capacitors and method for manufacturing the same
US4876220	1989-10	Mohsen et al.	Actel Corporation	Method of making programmable low impedance interconnect diode element
US4881114	1989-11	Mohsen et al.	Actel Corporation	Selectively formable vertical diode circuit element
US4899205	1990-02	Hamdy et al.	Actel Corporation	Electrically-programmable low-impedance anti-fuse element
US4922319	1990-05	Fukushima	Fujitsu Limited	Semiconductor programmable memory device
US4943538	1990-07	Mohsen et al.	Actel Corporation	Programmable low impedance anti-fuse element
US5001539	1991-03	Inoue et al.	Mitsubishi Denki Kabushiki Kaisha	Multiple layer static random access memory device
US5070383	1991-12	Sinar et al.	Zoran Corporation	Programmable memory matrix employing voltage-variable resistors
US5070384	1991-12	McCollum et al.	Actel Corporation	Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5089862	1992-02	Warner, Jr. et al.		Monocrystalline three-dimensional integrated circuit
US5103422	1992-04	Tokita et al.	Ricoh Compnay, Ltd.	Three-dimensional magnetic memory medium and method for initial setting thereof
US5160987	1992-11	Pricer et al.	International Business Machines Corporation	Three-dimensional semiconductor structures formed from planar layers
US5191405	1993-03	Tomita et al.	Matsushita Electric Industrial Co., Ltd.	Three-dimensional stacked LSI
US5202754	1993-04	Bertin et al.	International Business Machines Corporation	Three-dimensional multichip packages and methods of fabrication
US5266912	1993-11	Kledzik	Micron Technology, Inc.	Inherently impedance matched multiple integrated circuit module
US5283468	1994-02	Kondo et al.	Canon Kabushiki Kaisha	Electric circuit apparatus
US5289410	1994-02	Katti et al.	California Institute of Technology	Non-volatile magnetic random access memory
US5306935	1994-04	Esquivel et al.	Texas Instruments Incorporated	Method of forming a nonvolatile stacked memory
US5311039	1994-05	Kimura et al.	Seiko Epson Corporation	PROM and ROM memory cells
US5334880	1994-08	Abadeer et al.	International Business Machines Corporation	Low voltage programmable storage element
US5391518	1995-02	Bhushan	VLSI Technology, Inc.	Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes
US5391917	1995-02	Gilmour et al.	International Business Machines Corporation	Multiprocessor module packaging
US5398200	1995-03	Mazure et al.	Motorola, Inc.	Vertically formed semiconductor random access memory device
US5422435	1995-06	Takiar et al.	National Semiconductor Corporation	Stacked multi-chip modules and method of manufacturing
US5426566	1995-06	Beilstein, Jr. et al.	International Business Machines Corporation	Multichip integrated circuit packages and systems
US5427979	1995-06	Chang	VLSI Technology, Inc.	Method for making multi-level antifuse structure
US5434745	1995-07	Shokrgozar et al.	White Microelectronics Div. of Bowmar Instrument Corp.	Stacked silicon die carrier assembly
US5436861	1995-07	Katti et al.	California Institute of Technology	Vertical bloch line memory
US5441907	1995-08	Sung et al.	Taiwan Semiconductor Manufacturing Company	Process for manufacturing a plug-diode mask ROM
US5453952	1995-09	Okudaira et al.	Mitsubishi Denki Kabushiki Kaisha	Semiconductor device having peripheral circuit formed of TFT (thin film transistor)
US5455455	1995-10	De Araujo et al.		Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US5468997	1995-11	Imai et al.	NGK Spark Plug Co., Ltd.	Integrated circuit package having a multilayered wiring portion formed on an insulating substrate
US5471090	1995-11	Deutsch et al.	International Business Machines Corporation	Electronic structures having a joining geometry providing reduced capacitive loading
US5481133	1996-01	Hsu	United Microelectronics Corporation	Three-dimensional multichip package
US5495398	1996-02	Takiar et al.	National Semiconductor Corporation	Stacked multi-chip modules and method of manufacturing
US5502289	1996-03	Takiar et al.	National Semiconductor Corporation	Stacked multi-chip modules and method of manufacturing
US5523622	1996-06	Harada et al.	Hitachi, Ltd.	Semiconductor integrated device having parallel signal lines
US5523628	1996-06	Williams et al.	Hughes Aircraft Company	Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips
US5535156	1996-07	Levy et al.	California Institute of Technology	Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
US5536968	1996-07	Crafts et al.	AT&T Global Information Solutions Company	Polysilicon fuse array structure for integrated circuits
US5552963	1996-09	Burns	Staktek Corporation	Bus communication system for stacked high density integrated circuit packages
US5561622	1996-10	Bertin et al.	International Business Machines Corporation	Integrated memory cube structure
US5581498	1996-12	Ludwig et al.	Irvine Sensors Corporation	Stack of IC chips in lieu of single IC chip
US5585675	1996-12	Knopf	Harris Corporation	Semiconductor die packaging tub having angularly offset pad-to-pad via structure configured to allow three-dimensional stacking and electrical interconnections among multiple identical tubs
US5602987	1997-02	Harari et al.	SanDisk Corporation	Flash EEprom system
US5612570	1997-03	Eide et al.	Dense-Pac Microsystems, Inc.	Chip stack and method of making same
US5640343	1997-06	Gallagher et al.	International Business Machines Corporation	Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5654220	1997-08	Leedy	ELM Technology Corporation	Method of making a stacked 3D integrated circuit structure
US5675547	1997-10	Koga	Sony Corporation	One time programmable read only memory programmed by destruction of insulating layer
US5686341	1997-11	Roesner	Unisys Corporation	Method of fabricating an electrically alterable resistive component using germanium
US5693552	1997-12	Hsu	United Microelectronics Corporation	Method for fabricating read-only memory device with a three-dimensional memory cell structure
US5696031	1997-12	Wark	Micron Technology, Inc.	Device and method for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US5703747	1997-12	Voldman et al.		Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
US5737259	1998-04	Chang	United Microelectronics Corporation	Method of decoding a diode type read only memory
US5745407	1998-04	Levy et al.	California Institute of Technology	Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
US5751012	1998-05	Wolstenholme et al.	Micron Technology, Inc.	Polysilicon pillar diode for use in a non-volatile memory cell
US5776810	1998-07	Guterman et al.	Sandisk Corporation	Method for forming EEPROM with split gate source side injection
US5780925	1998-07	Cipolla et al.	International Business Machines Corporation	Lead frame package for electronic devices
US5781031	1998-07	Bertin et al.	International Business Machines Corporation	Programmable logic array
US5801437	1998-09	Burns	Staktek Corporation	Three-dimensional warp-resistant integrated circuit module method and apparatus
US5835396	1998-11	Zhang		Three-dimensional read-only memory
US5854534	1998-12	Beilin et al.	Fujitsu Limited	Controlled impedence interposer substrate
US5883409	1999-03	Guterman et al.	Sandisk Corporation	EEPROM with split gate source side injection
US5903059	1999-05	Bertin et al.	International Business Machines Corporation	Microconnectors
US5915167	1999-06	Leedy	Elm Technology Corporation	Three dimensional structure memory
US5929478	1999-07	Parris et al.	Motorola, Inc.	Single level gate nonvolatile memory device and method for accessing the same
US5960539	1999-10	Burns	Staktek Corporation	Method of making high density integrated circuit module
US5969380	1999-10	Seyyedy	Micron Technology, Inc.	Three dimensional ferroelectric memory
US5969383	1999-10	Chang et al.	Motorola, Inc.	Split-gate memory device and method for accessing the same
US5976953	1999-11	Zavracky et al.	Kopin Corporation	Three dimensional processor using transferred thin film circuits
US5978258	1999-11	Manning	Micron Technology, Inc.	MOS diode for use in a non-volatile memory cell background
US5985693	1999-11	Leedy	ELM Technology Corporation	High density three-dimensional IC interconnection
US6034882	2000-03	Johnson et al.	Matrix Semiconductor, Inc.	Vertically stacked field programmable nonvolatile memory and method of fabrication
US6049123	2000-04	Burns	Staktek Corporation	Ultra high density integrated circuit packages
US6057598	2000-05	Payne et al.	VLSI Technology, Inc.	Face on face flip chip integration
US6072234	2000-06	Johnson et al.	Irvine Sensors Corporation	Stack of equal layer neo-chips containing encapsulated IC chips of different sizes
US6197641	2001-03	Hergenrother et al.	Lucent Technologies Inc.	Process for fabricating vertical transistors
US6208545	2001-03	Leedy		Three dimensional structure memory
US6281042	2001-08	Ahn et al.	Micron Technology, Inc.	Structure and method for a high performance electronic packaging assembly
US6291858	2001-09	Ma et al.	International Business Machines Corporation	Multistack 3-dimensional high density semiconductor device and method for fabrication
US6307257	2001-10	Huang et al.	Siliconware Precision Industries, Co., Ltd.	Dual-chip integrated circuit package with a chip-die pad formed from leadframe leads
US6314013	2001-11	Ahn et al.	Micron Technology, Inc.	Stacked integrated circuits
US6322903	2001-11	Siniaguine et al.	Tru-Si Technologies, Inc.	Package of integrated circuits and vertical integration
US6337521	2002-01	Masuda	Hitachi, Ltd.	Semiconductor device and a method of manufacturing the same
US6351028	2002-02	Akram	Micron Technology, Inc.	Multiple die stack apparatus employing T-shaped interposer elements
US6353265	2002-03	Michii	Mitsubishi Denki Kabushiki Kaisha	Semiconductor device
US6355501	2002-03	Fung et al.	International Business Machines Corporation	Three-dimensional chip stacking assembly
US20010033030A1	2001-10	Leedy		Three dimensional structure integrated circuits
US20010054759A1	2001-12	Nishiura		Semiconductor device
US20020024146A1	2002-02	Furusawa		SEMICONDUCTOR DEVICE
US20020027275A1	2002-03	Akram		Semiconductor device
US20020030263A1	2002-03	Akram		Multiple die stack apparatus employing T-shaped interposer elements

Foreign References:

Publication	Date	IPC Code	Assignee	Title
EP0073486	1983-03	G11C 5/02	KABUSHIKI KAISHA TOSHIBA	Stacked semiconductor memory
EP0387834	1990-09	H01L 21/82	KABUSHIKI KAISHA TOSHIBA	Semiconductor structure for processing and storing of information
EP0395886	1990-11	G11C 11/21	OLYMPUS OPTICAL CO., LTD.	Memory cell and multidimensinal memory device constituted by arranging thememory cells
EP0516866	1992-12	H01L 23/34	International Business Machines Corporation	Modular multilayer interwiring structure
EP0606653	1994-07	G06F 15/76	TEXAS INSTRUMENTS INCORPORATED	Field programmable distributed processing memory
EP0644548	1995-03	G11C 5/00	INTERNATIONAL BUSINESS MACHINES CORPORATION	Integrated memory cube, structure and fabrication
EP0800137	1997-10	G06F 9/38	INTERNATIONAL BUSINESS MACHINES CORPORATION	Memory controller
JP60022352	1985-02
JP61222216	1986-10
JP63052463	1988-03
WO9426083	1994-11	H01L 25/00	IRVINE SENSORS CORPORATION	ELECTRONIC MODULE COMPRISING A STACK OF IC CHIPS
WO9914763	1999-03	G11C 11/56	GUDESEN, HANS, GUDE	A READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICES