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Title: US6486727: Low-power substrate bias generator disabled by comparators for supply over-voltage protection and bias target voltage
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Country: US United States of America

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12 pages

 
Inventor: Kwong, David; Fremont, CA

Assignee: Pericom Semiconductor Corp., San Jose, CA
other patents from PERICOM SEMICONDUCTOR CORP. (713978) (approx. 58)
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Published / Filed: 2002-11-26 / 2001-10-11

Application Number: US2001000682736

IPC Code: Advanced: H02M 3/07;
Core: H02M 3/04;
IPC-7: H03K 3/01;

U.S. Class: 327/534; 327/535; 327/537; 327/156;

Field of Search: 327/530,534,535,536,537,155,156,157

Priority Number:
2001-10-11  US2001000682736

Abstract: A substrate bias generator has a ring oscillator disabled when a supply over-voltage condition is detected by a supply comparator, or when a target substrate voltage is reached. A substrate comparator compares the substrate voltage to a reference generated by a p-channel sense transistor that is independent of the substrate voltage. The substrate is sensed by an n-channel sense transistor with only its bulk connected to the substrate voltage. Current sources for the sense transistors and comparator are controlled by bias voltages generated by a voltage divider that switches from a high-power state to a low-power state once the substrate target is reached. Feedback turns off a high-current resistor, limiting current to that passing through a low-current resistor. The bias voltages are adjusted to reduce current to the sense transistors and comparator, reducing power. High current and power are used for fast sensing before the substrate target is reached.

Attorney, Agent or Firm: Auvinen, Stuart T. ;

Primary / Asst. Examiners: Callahan, Timothy P.; Luu, An T.

INPADOC Legal Status: Show legal status actions

Family: None

First Claim:
Show all 18 claims
What is claimed is:     1. A low-power substrate bias generator comprising:
  • an oscillator for generating pumping signals when activated, but being in a low-power state when disabled;
  • a charge pump, receiving the pumping signals from the oscillator, for pumping charge from a substrate to reduce a substrate voltage to a target;
  • a substrate comparator, sensing the substrate voltage and comparing the substrate voltage to a target, for disabling the oscillator when the substrate voltage has reached the target;
  • wherein the substrate comparator further comprises:
    • a reference-voltage generator for generating a current-reference voltage;
    • a current switch, coupled to the reference-voltage generator, for switching a large current through the reference-voltage generator when the substrate comparator is in the higher-power state, but for switching a smaller current through the reference-voltage generator when the substrate comparator is in the lower-power state;
    • wherein the reference-voltage generator switches the current-reference voltage between a first level for the higher-power state, and a second level for the lower-power state;
    • a sensing transistor, receiving the substrate voltage, for modulating a larger current when the current-reference voltage is at the first level, but for modulating a smaller current when the current-reference voltage is at the second level, the sensing transistor modulating a current in response to changes in the substrate voltage;
    • wherein the substrate comparator senses the substrate voltage more quickly when in the higher-power state than when in the lower-power state, and
  • a supply comparator, sensing a supply voltage and comparing a supply-independent reference voltage, for disabling the oscillator when the supply voltage is above a limit determined by the supply-independent reference voltage,
  • whereby the oscillator is disabled, entering the low-power state, when the substrate reaches the target or when the supply voltage is above the limit and whereby rapid substrate sensing is provided before the substrate voltage reaches the target, but the lower-power state is entered after the target is reached.


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Forward References: Show 12 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (12)   |   Backward references (18)   |   Citation Link

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PDF
Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 9pp US4288865  1981-09 Graham  Mostek Corporation Low-power battery backup circuit for semiconductor memory
Buy PDF- 5pp US4322675  1982-03 Lee et al.  Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory
Buy PDF- 8pp US4433253  1984-02 Zapisek  Standard Microsystems Corporation Three-phase regulated high-voltage charge pump
Buy PDF- 8pp US4794278  1988-12 Vajdic  Intel Corporation Stable substrate bias generator for MOS circuits
Buy PDF- 11pp US5113088  1992-05 Yamamoto et al.  Oki Electric Industry Co., Ltd. Substrate bias generating circuitry stable against source voltage changes
Buy PDF- 8pp US5267201  1993-11 Foss et al.  Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
Buy PDF- 26pp US5307315  1994-04 Oowaki et al.  Kabushiki Kaisha Toshiba Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage
Buy PDF- 17pp US5347172  1994-09 Cordoba et al.  United Memories, Inc. Oscillatorless substrate bias generator
Buy PDF- 12pp US5670907  1997-09 Gorecki et al.  Lattice Semiconductor Corporation VBB reference for pumped substrates
Buy PDF- 11pp US5694072  1997-12 Hsiao et al.  Pericom Semiconductor Corp. Programmable substrate bias generator with current-mirrored differential comparator and isolated bulk-node sensing transistor for bias voltage control
Buy PDF- 45pp US5835420  1998-11 Lee et al.  Aplus Flash Technology, Inc. Node-precise voltage regulation for a MOS memory system
Buy PDF- 13pp US5889719  1999-03 Yoo et al.  Samsung Electronics Co., Ltd. Semiconductor memory device
Buy PDF- 13pp US6052019  2000-04 Kwong  Pericom Semiconductor Corp. Undershoot-isolating MOS bus switch
Buy PDF- 13pp US6114876  2000-09 Kwong et al.  Pericom Semiconductor Corp. Translator switch transistor with output voltage adjusted to match a reference by controlling gate and substrate charge pumps
Buy PDF- 24pp US6137335  2000-10 Proebsting  Townsend and Townsend and Crew LLP Oscillator receiving variable supply voltage depending on substrate voltage detection
Buy PDF- 15pp US6154411  2000-11 Morishita  Mitsubishi Denki Kabushiki Kaisha Boosting circuit compensating for voltage fluctuation due to operation of load
Buy PDF- 5pp US6265946  2001-07 Bartlett  LSI Logic Corporation Differential mode charge pump and loop filter with common mode feedback
Buy PDF- 38pp US6329869  2001-12 Matano  NEC Corporation Semiconductor device with less influence of noise
       
Foreign References: None

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