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 The Delphion Integrated View

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Title: US6531759: Alpha particle shield for integrated circuit
[ Derwent Title ]


Country: US United States of America

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6 pages

 
Inventor: Wachnik, Richard A.; Mount Kisco, NY
Nye, III, Henry A.; Brookfield, CT
Davis, Charles R.; Fishkill, NY
Zabel, Theodore H.; Yorktown Heights, NY
Restle, Phillip J.; Katonah, NY

Assignee: International Business Machines Corporation, Armonk, NY
other patents from INTERNATIONAL BUSINESS MACHINES CORPORATION (280070) (approx. 44,393)
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Published / Filed: 2003-03-11 / 2001-02-06

Application Number: US2001000777540

IPC Code: Advanced: H01L 21/60; H01L 21/768; H01L 23/556;
IPC-7: H01L 23/552;

ECLA Code: H01L23/556; H01L24/11; T01L924/01042; T01L924/01073; T01L924/01074; T01L924/01075; T01L924/01079; T01L924/14000; T01L924/30105; T01L924/30107; T01L924/30250; T01L224/13099; T01L924/01013; T01L924/01022; T01L924/01029; T01L924/01077;

U.S. Class: Current: 257/659; 257/642; 257/643; 257/660; 257/E21.508; 257/E21.576; 257/E21.582; 257/E23.115; 438/082; 438/725;
Original: 257/659; 257/660; 257/642; 257/643; 438/082; 438/725;

Field of Search: 257/659,660,642,643,546 174/035 357/051,54,68 365/053,149 029/591

Priority Number:
2001-02-06  US2001000777540

Abstract:     An integrated circuit, comprising: a semiconductor substrate, a plurality of last metal conductors disposed above said substrate, a bottom metallic layer disposed on said last metal conductors, a top metallic layer, and an alpha absorber disposed between said bottom and top metallic layers, said alpha absorber consisting essentially of a high-purity metal which is an alpha-particle absorber. The metal is, for example, of Ta, W, Re, Os or Ir.

Attorney, Agent or Firm: Abate, Joseph P. ;

Primary / Asst. Examiners: Smith, Matthew; Keshavan, B V

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First Claim:
Show all 6 claims
What is claimed is:     1. An integrated circuit comprising:
  • a semiconductor substate,
  • a plurality of last metal conductors disposed above said substrate,
  • a bottom metallic layer disposed on and electrical contacting said last metal conductors,
  • a top metallic layer, and
  • an alpha absorber disposed between said bottom and top metallic layers, said alpha absorber consisting essentially of a high-purity metal which is an alpha-particle absorber.


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Description: Show description

Forward References: Show 6 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (6)   |   Backward references (15)   |   Citation Link

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Patent  Pub.Date  Inventor Assignee   Title
Get PDF - 6pp US4323405  1982-04 Uno et al.  Narumi China Corporation Casing having a layer for protecting a semiconductor memory to be sealed therein against alpha particles and a method of manufacturing same
Get PDF - 9pp US4423548  1984-01 Hulsewch  Motorola, Inc. Method for protecting a semiconductor device from radiation indirect failures
Get PDF - 6pp US4510050  1985-04 Parlman et al.   Metal trithiocarbonates as depressants
Get PDF - 10pp US4519050  1985-05 Folmsbee  Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
Get PDF - 9pp US4530074  1985-07 Folsmbee  Intel Corporation Radiation shield for a portion of a radiation sensitive integrated circuit
Get PDF - 4pp US4656055  1987-04 Dwyer  RCA Corporation Double level metal edge seal for a semiconductor device
Get PDF - 15pp US4853894  1989-08 Yamanaka et al.  Hitachi, Ltd. Static random-access memory having multilevel conductive layer
Get PDF - 8pp US4947235  1990-08 Roth et al.  Delco Electronics Corporation Integrated circuit shield
Get PDF - 6pp US4975762  1990-12 Stradley  General Electric Ceramics, Inc. Alpha-particle-emitting ceramic composite cover
Get PDF - 7pp US5053848  1991-10 Houston et al.  Texas Instruments Incorporated Apparatus for providing single event upset resistance for semiconductor devices
Get PDF - 55pp US5324982  1994-06 Nakazato et al.  Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
Get PDF - 11pp US5391915  1995-02 Mukai et al.  Hatachi, Ltd. Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
Get PDF - 17pp US5805494  1998-09 El-Kareh et al.  International Business Machines Corporation Trench capacitor structures
Get PDF - 16pp US5999440  1999-12 Crafts  LSI Logic Corporation Embedded DRAM with noise-protecting substrate isolation well
Get PDF - 9pp US6043429  2000-03 Blish, II et al.  Advanced Micro Devices, Inc. Method of making flip chip packages
       
Foreign References: None

Other Abstract Info: CHEMABS 137(10)148786D

Other References:
  • IBM Technical Disclosure Bulletin,80A 05436, Alpha Particle Shield, Oct. 1980, pp. 1892-1893.


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