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Title: US6693480: Voltage booster with increased voltage boost using two pumping capacitors
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Country: US United States of America

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12 pages

 
Inventor: Wong, Anthony Yap; Cupertino, CA

Assignee: Pericom Semiconductor Corp., San Jose, CA
other patents from PERICOM SEMICONDUCTOR CORP. (713978) (approx. 58)
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Published / Filed: 2004-02-17 / 2003-03-27

Application Number: US2003000249282

IPC Code: Advanced: H02M 3/07; H03K 17/06;
Core: H02M 3/04; more...
IPC-7: H03K 17/16;

ECLA Code: H02M3/07S; H03K17/06B;

U.S. Class: 327/390; 327/536; 363/060;

Field of Search: 827/108,112,389,390,306,536 363/059,60

Priority Number:
2003-03-27  US2003000249282

Abstract: A voltage booster drives the gate of a bus-switch n-channel transistor to a theoretical maximum of triple the power-supply voltage Vcc. The gate node is first driven to Vcc. Then the back-side of a first capacitor is driven from ground to Vcc, coupling a first voltage boost to the gate node. After a Schmidt-trigger detects the back-side of the first capacitor near Vcc, the back-side of a second capacitor is driven from ground to Vcc. The front-side of the second capacitor is connected to the back-side of the first capacitor. A second voltage boost is coupled across the first and second capacitors to increase the voltage boost of the gate node to near triple Vcc rather than just double Vcc.

Attorney, Agent or Firm: Auvinen, Stuart T. ;

Primary / Asst. Examiners: Nguyen, Long;

INPADOC Legal Status: Show legal status actions

Family: None

First Claim:
Show all 20 claims
What is claimed is:     1. A double-boost voltage booster comprising:
  • a buffer for buffering an input signal to generate a buffered input signal;
  • a charge pump for generating a pumped voltage above a power-supply voltage;
  • a boosted node driven from ground to a boosted voltage above the power-supply voltage;
  • a pull-down n-channel transistor, coupled to drive the boosted node to ground in response to the buffered input signal;
  • a pull-up p-channel transistor, having a gate controlled by the buffered input signal, for coupling the boosted node to a keeper node;
  • a keeper p-channel transistor, coupled to supply a keeper current to the keeper node from the charge pump, the keeper p-channel transistor having a keeper gate;
  • a control node, initially driven low in response to the buffered input signal;
  • a first p-channel transistor, having a drain coupled to the boosted node and a source coupled to a power source providing the power-supply voltage, for conducting current from the power source to the boosted node in response to the control node applied to a gate of the first p-channel transistor;
  • a second p-channel transistor, having a drain coupled to the control node and a source coupled to the pumped voltage from the charge pump, for conducting current from the pumped voltage to the control node, the second p-channel transistor having a gate controlled by a delayed node;
  • a first delay line, having a first inverter with an input connected to the boosted node, for delaying a rising transition of the boosted node to drive the delayed node to control the second p-channel transistor and for driving a first back-side node;
  • a first capacitor, coupled between the first back-side node and the boosted node, for coupling a first voltage swing output by the first delay line to the boosted node;
  • a second delay line, having a second inverter with an input connected to the first back-side node, for delaying a rising transition of the first back-side node to drive a second back-side node; and
  • a second capacitor, coupled between the first back-side node and the second back-side node, for coupling a second voltage swing output by the second delay line to the first back-side node,
  • whereby the first voltage swing is coupled to the boosted node through the first capacitor and the second voltage swing is coupled to the boosted node through the first and second capacitors.


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Description: Show description

Forward References: Show 4 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (4)   |   Backward references (13)   |   Citation Link

Buy
PDF
Patent  Pub.Date  Inventor Assignee   Title
  US3639696  1972-02 Chambers et al.  Lorain Products Corporation MULTISTATE VOLTAGE BOOSTER CIRCUIT FOR TELEPHONE SYSTEMS
Buy PDF- 12pp US5361237  1994-11 Chishiki  NEC Corporation Semiconductor memory device provided with a word-line driver circuit using boosted voltage-source divided decoding
Buy PDF- 27pp US5412604  1995-05 Fukuda et al.  Mitsubishi Denki Kabushiki kaisha Semiconductor device using boosted signal
Buy PDF- 9pp US5592115  1997-01 Kassapian  SGS-Thomson Microelectronics S.A. Voltage booster circuit of the charge-pump type with a bootstrapped oscillator
Buy PDF- 8pp US5675279  1997-10 Fujimoto et al.  Kabushiki Kaisha Toshiba Voltage stepup circuit for integrated semiconductor circuits
Buy PDF- 10pp US5847946  1998-12 Wong  Pericom Semiconductor Corp. Voltage booster with pulsed initial charging and delayed capacitive boost using charge-pumped delay line
Buy PDF- 15pp US5889427  1999-03 Nakajima  NEC Corporation Voltage step-up circuit
Buy PDF- 13pp US5946204  1999-08 Wong  Pericom Semiconductor Corp. Voltage booster with reduced Vpp current and self-timed control loop without pulse generator
Buy PDF- 8pp US5982224  1999-11 Chung et al.  Samsung Electronics Co., Ltd. Low-power charge pump circuit having reduced body effect
Buy PDF- 19pp US6069828  2000-05 Kaneko et al.  Kabushiki Kaisha Toshiba Semiconductor memory device having voltage booster circuit
Buy PDF- 6pp US6127875  2000-10 Allen et al.  Motorola, Inc. Complimentary double pumping voltage boost converter
Buy PDF- 8pp US6157225  2000-12 Micheloni et al.  STMicroelectronics S.r.l. Driving circuit with three output levels, one output level being a boosted level
Buy PDF- 17pp US6157242  2000-12 Fukui  Sharp Kabushiki Kaisha Charge pump for operation at a wide range of power supply voltages
       
Foreign References: None

Other Abstract Info: DERABS C2004-255840

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