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Title: US7068064: Memory module with dynamic termination using bus switches timed by memory clock and chip select
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Country: US United States of America

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14 pages

 
Inventor: Yen, Yao Tung; Cupertino, CA, United States of America

Assignee: Pericom Semiconductor Corp., San Jose, CA, United States of America
other patents from PERICOM SEMICONDUCTOR CORP. (713978) (approx. 58)
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Published / Filed: 2006-06-27 / 2004-07-14

Application Number: US2004000710475

IPC Code: Advanced: G11C 5/06; H03K 17/16; H03K 19/03;
Core: H03K 19/003; more...

ECLA Code: G11C5/00; G06F13/40E2T; T04L25/02K11;

U.S. Class: Current: 326/030; 326/028; 365/063; 365/094; 365/230.06; 365/233.1; 365/233.11;
Original: 326/030; 326/028; 365/063; 365/233;

Field of Search: 326/026,27,28,30,93 365/063,51,233,230.03 361/788 710/107

Priority Number:
2004-07-14  US2004000710475
2003-12-01  US2003000707249
2003-05-12  US2003000249845

Abstract:     A low-power memory module has an active termination circuit at each end of critical signal traces. The dynamic termination circuit has a low-value resistor that is connected to a termination voltage by a transmission gate that is turned on by a switch signal. The switch signal is activated when the memory module is selected by a chip-select signal, and when a time window is open. The time window is generated from the clock to synchronous DRAMs on the memory module. The time window can be one-quarter of the clock period by ANDing the clock and a delayed clock that is delayed by one-quarter of a cycle. A static terminating resistor in parallel with the low-value resistor provides a much smaller terminating current that is not switched on and off. Traces can be impedance-matched at junctions to branches that each has a dynamic termination circuit at the far end.

Attorney, Agent or Firm: Auvinen, Stuart T. ;

Primary / Asst. Examiners: Chang, Daniel;

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Related Applications:
Application Number Filed Patent Pub. Date  Title
US2003000707249 2003-12-01    2005-08-09  Trace-impedance matching at junctions of multi-load signal traces to eliminate termination
US2003000249845 2003-05-12    2005-09-20  DDR memory modules with input buffers driving split traces with trace-impedance matching at trace junctions


       
Parent Case: CROSS REFERENCE TO RELATED APPLICATIONS
    This application is a continuation-in-part of the application for “Trace-Impedance Matching at Junctions of Multi-Load Signal Traces to Eliminate Termination”, U.S. Ser. No. 10/707,249, filed Dec. 1, 2003 is now a U.S. Pat. No. 6,927,992, which is a continuation-in-part of the application for “DDR Memory Modules With Input Buffers Driving Split Traces with Trace-Impedance Matching at Trace Junctions”, U.S. Ser. No. 10/249,845, filed May 12, 2003 is now a U.S. Pat. No. 6,947,304.

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First Claim:
Show all 25 claims
    1. A memory module comprising:

a substrate with metal contact pads along an edge of the substrate for insertion into a socket on a main board;

a plurality of memory chips mounted on the substrate;

a terminated signal line on the substrate connected to inputs on the plurality of memory chips, the terminated signal line having a driven end that is driven by a driver on the substrate or on the main board, and a far end that is farther along the terminated signal line than is the driven end;

a dynamic termination circuit attached to the far end of the terminated signal line, the dynamic termination circuit selectively connecting a low-impedance path to the far end in response to a switch signal being in an active state, but disconnecting the low-impedance path from the far end in response to the switch signal being in an inactive state;

a clock signal and a chip-select signal carried by lines on the substrate, wherein the chip-select signal is activated when the main board accesses the plurality of memory chips and wherein the plurality of memory chips operate synchronously to the clock signal when the chip-select signal is activated; and

a switch-signal generator, mounted on the substrate, receiving the chip-select signal and the clock signal, the switch-signal generator generating the switch signal in the active state synchronously to the clock signal when the chip-select signal is activated to select the plurality of memory chips for access by the main board,

whereby the low-impedance path terminates the terminated signal line in response to the switch signal.



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Forward References: Show 1 U.S. patent(s) that reference this one

       
U.S. References: Go to Result Set: All U.S. references   |  Forward references (1)   |   Backward references (11)   |   Citation Link

Buy
PDF
Patent  Pub.Date  Inventor Assignee   Title
Buy PDF- 7pp US5227677  1993-07 Furman  International Business Machines Corporation Zero power transmission line terminator
Buy PDF- 42pp US5729152  1998-03 Leung et al.  Monolithic System Technology, Inc. Termination circuits for reduced swing signal lines and methods for operating same
Buy PDF- 14pp US6072342  2000-06 Haider et al.  Intel Corporation Timed one-shot active termination device
Buy PDF- 11pp US6266252  2001-07 Karabatsos   Apparatus and method for terminating a computer memory bus
Buy PDF- 20pp US6356106  2002-03 Greeff et al.  Micron Technology, Inc. Active termination in a multidrop memory system
Buy PDF- 11pp US6429678  2002-08 Wong et al.  Pericom Semiconductor Corp. Capacitively-coupled extended swing zero-DC-power active termination with CMOS overshoot/undershoot clamps
Buy PDF- 12pp US6538951  2003-03 Janzen et al.  Micron Technology, Inc. Dram active termination control
Buy PDF- 13pp US6686763  2004-02 Yen  Pericam Semiconductor Corp. Near-zero propagation-delay active-terminator using transmission gate
Buy PDF- 10pp US6714465  2004-03 Jang  Samsung Electronics Co., Ltd. Memory device and process for improving the state of a termination
Buy PDF- 16pp US6738844  2004-05 Muljono et al.  Intel Corporation Implementing termination with a default signal on a bus line
Buy PDF- 9pp US6839786  2005-01 Kim et al.  Samsung Electronics Co., Ltd. Information processing system with memory modules of a serial bus architecture
       
Foreign References: None

Continuity Data:
Application Number Filed Notes

US2003000710475   is a continuation in part of
US2003000707249  2003-12-01
     US6927992 issued 2005-08-09   Trace-impedance matching at junctions of multi-load signal traces to eliminate termination

US2003000707249   is a continuation in part of
US2003000249845  2003-05-12
     US6947304 issued 2005-09-20   DDR memory modules with input buffers driving split traces with trace-impedance matching at trace junctions


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